EP1143031A3 - Plasmaborierung - Google Patents
Plasmaborierung Download PDFInfo
- Publication number
- EP1143031A3 EP1143031A3 EP01110904A EP01110904A EP1143031A3 EP 1143031 A3 EP1143031 A3 EP 1143031A3 EP 01110904 A EP01110904 A EP 01110904A EP 01110904 A EP01110904 A EP 01110904A EP 1143031 A3 EP1143031 A3 EP 1143031A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- minimum
- excited
- specified
- amount
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005271 boronizing Methods 0.000 title 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
- C23C8/38—Treatment of ferrous surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19755595 | 1997-12-15 | ||
DE19755595 | 1997-12-15 | ||
EP98965249A EP1044289B1 (de) | 1997-12-15 | 1998-12-11 | Plasmaborierung |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98965249A Division EP1044289B1 (de) | 1997-12-15 | 1998-12-11 | Plasmaborierung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1143031A2 EP1143031A2 (de) | 2001-10-10 |
EP1143031A3 true EP1143031A3 (de) | 2004-04-28 |
Family
ID=7851902
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98965249A Expired - Lifetime EP1044289B1 (de) | 1997-12-15 | 1998-12-11 | Plasmaborierung |
EP01110904A Ceased EP1143031A3 (de) | 1997-12-15 | 1998-12-11 | Plasmaborierung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98965249A Expired - Lifetime EP1044289B1 (de) | 1997-12-15 | 1998-12-11 | Plasmaborierung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6783794B1 (de) |
EP (2) | EP1044289B1 (de) |
JP (1) | JP4588213B2 (de) |
KR (1) | KR100583262B1 (de) |
CN (1) | CN1198953C (de) |
AT (1) | ATE215132T1 (de) |
DE (1) | DE59803574D1 (de) |
WO (1) | WO1999031291A2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE524493C2 (sv) * | 2002-02-25 | 2004-08-17 | Telia Ab | Uppskattningsenhet och metod för att bestämma positionen för en mobil station i ett mobilt kommunikationssystem |
WO2007038192A2 (en) | 2005-09-22 | 2007-04-05 | Skaffco Engineering & Manufacturing, Inc. | Plasma boriding method |
WO2007124018A2 (en) * | 2006-04-20 | 2007-11-01 | Skaff Corporation Of America, Inc. | Mechanical parts having increased wear resistance |
CA2680858A1 (en) * | 2007-03-22 | 2008-09-25 | Skaff Corporation Of America, Inc. | Mechanical parts having increased wear-resistance |
US8338317B2 (en) * | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
CN104233425B (zh) * | 2014-09-29 | 2017-01-25 | 河海大学常州校区 | 微弧渗硼催化溶液和微弧渗硼溶液以及微弧渗硼方法 |
KR102084296B1 (ko) * | 2016-12-15 | 2020-03-03 | 도쿄엘렉트론가부시키가이샤 | 성막 방법, 붕소 막 및 성막 장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3677799A (en) * | 1970-11-10 | 1972-07-18 | Celanese Corp | Vapor phase boron deposition by pulse discharge |
US4406765A (en) * | 1980-01-28 | 1983-09-27 | Fuji Photo Film Co., Ltd. | Apparatus and process for production of amorphous semiconductor |
DE3322341A1 (de) * | 1983-06-22 | 1985-01-03 | Siegfried Dr.-Ing. 5135 Selfkant Strämke | Verfahren und vorrichtung zur oberflaechenbehandlung von werkstuecken durch glimmentladung |
DE4003623A1 (de) * | 1990-02-07 | 1991-08-08 | Kloeckner Ionon | Verfahren zur steuerung einer anlage zur plasmabehandlung von werkstuecken |
EP0603864A2 (de) * | 1992-12-23 | 1994-06-29 | Hughes Aircraft Company | Reglung des Oberflächenpotentials bei der Plasma-Bearbeitung von Werkstoffen |
FR2708624A1 (fr) * | 1993-07-30 | 1995-02-10 | Neuville Stephane | Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié. |
EP0695813A2 (de) * | 1994-08-06 | 1996-02-07 | ALD Vacuum Technologies GmbH | Verfahren zum Aufkohlen von Bauteilen aus kohlungsfähigen Werkstoffen mittels einer impulsförmig betriebenen Plasma-entladung |
WO1997027345A1 (de) * | 1996-01-25 | 1997-07-31 | Elektroschmelzwerk Kempten Gmbh | Verfahren zur herstellung von verschleissfesten boridschichten auf metallischen werkstoffoberflächen |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5118944A (ja) * | 1974-08-07 | 1976-02-14 | Suwa Seikosha Kk | Kisohokaho |
DE3908200C1 (de) * | 1989-03-14 | 1989-09-07 | Degussa Ag, 6000 Frankfurt, De | |
US5286534A (en) * | 1991-12-23 | 1994-02-15 | Minnesota Mining And Manufacturing Company | Process for plasma deposition of a carbon rich coating |
US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
JPH07286254A (ja) * | 1994-04-21 | 1995-10-31 | Sumitomo Metal Ind Ltd | 耐二次加工脆性に優れた鋼板およびその製造方法 |
JP3050361B2 (ja) * | 1994-07-19 | 2000-06-12 | 株式会社ライムズ | 金属部材のイオン窒化方法 |
US5578725A (en) | 1995-01-30 | 1996-11-26 | Regents Of The University Of Minnesota | Delta opioid receptor antagonists |
JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
US6306225B1 (en) * | 1996-01-25 | 2001-10-23 | Bor Tec Gmbh | Process for producing wear-resistant boride layers on metallic material surfaces |
DE19629877C1 (de) * | 1996-07-24 | 1997-03-27 | Schott Glaswerke | CVD-Verfahren und Vorrichtung zur Innenbeschichtung von Hohlkörpern |
US5654043A (en) * | 1996-10-10 | 1997-08-05 | Eaton Corporation | Pulsed plate plasma implantation system and method |
US6101971A (en) * | 1998-05-13 | 2000-08-15 | Axcelis Technologies, Inc. | Ion implantation control using charge collection, optical emission spectroscopy and mass analysis |
US20040016402A1 (en) * | 2002-07-26 | 2004-01-29 | Walther Steven R. | Methods and apparatus for monitoring plasma parameters in plasma doping systems |
-
1998
- 1998-12-11 EP EP98965249A patent/EP1044289B1/de not_active Expired - Lifetime
- 1998-12-11 AT AT98965249T patent/ATE215132T1/de not_active IP Right Cessation
- 1998-12-11 EP EP01110904A patent/EP1143031A3/de not_active Ceased
- 1998-12-11 WO PCT/EP1998/008079 patent/WO1999031291A2/de active IP Right Grant
- 1998-12-11 CN CNB988121832A patent/CN1198953C/zh not_active Expired - Fee Related
- 1998-12-11 JP JP2000539186A patent/JP4588213B2/ja not_active Expired - Fee Related
- 1998-12-11 DE DE59803574T patent/DE59803574D1/de not_active Expired - Lifetime
- 1998-12-11 KR KR1020007006436A patent/KR100583262B1/ko not_active IP Right Cessation
-
2000
- 2000-06-15 US US09/594,905 patent/US6783794B1/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3677799A (en) * | 1970-11-10 | 1972-07-18 | Celanese Corp | Vapor phase boron deposition by pulse discharge |
US4406765A (en) * | 1980-01-28 | 1983-09-27 | Fuji Photo Film Co., Ltd. | Apparatus and process for production of amorphous semiconductor |
DE3322341A1 (de) * | 1983-06-22 | 1985-01-03 | Siegfried Dr.-Ing. 5135 Selfkant Strämke | Verfahren und vorrichtung zur oberflaechenbehandlung von werkstuecken durch glimmentladung |
DE4003623A1 (de) * | 1990-02-07 | 1991-08-08 | Kloeckner Ionon | Verfahren zur steuerung einer anlage zur plasmabehandlung von werkstuecken |
EP0603864A2 (de) * | 1992-12-23 | 1994-06-29 | Hughes Aircraft Company | Reglung des Oberflächenpotentials bei der Plasma-Bearbeitung von Werkstoffen |
FR2708624A1 (fr) * | 1993-07-30 | 1995-02-10 | Neuville Stephane | Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié. |
EP0695813A2 (de) * | 1994-08-06 | 1996-02-07 | ALD Vacuum Technologies GmbH | Verfahren zum Aufkohlen von Bauteilen aus kohlungsfähigen Werkstoffen mittels einer impulsförmig betriebenen Plasma-entladung |
WO1997027345A1 (de) * | 1996-01-25 | 1997-07-31 | Elektroschmelzwerk Kempten Gmbh | Verfahren zur herstellung von verschleissfesten boridschichten auf metallischen werkstoffoberflächen |
Also Published As
Publication number | Publication date |
---|---|
ATE215132T1 (de) | 2002-04-15 |
WO1999031291A3 (de) | 1999-09-10 |
EP1044289B1 (de) | 2002-03-27 |
DE59803574D1 (de) | 2002-05-02 |
CN1198953C (zh) | 2005-04-27 |
US6783794B1 (en) | 2004-08-31 |
KR20010033075A (ko) | 2001-04-25 |
CN1282383A (zh) | 2001-01-31 |
EP1044289A2 (de) | 2000-10-18 |
WO1999031291A2 (de) | 1999-06-24 |
JP4588213B2 (ja) | 2010-11-24 |
KR100583262B1 (ko) | 2006-05-25 |
JP2002508448A (ja) | 2002-03-19 |
EP1143031A2 (de) | 2001-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AC | Divisional application: reference to earlier application |
Ref document number: 1044289 Country of ref document: EP |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT DE ES FR GB IT PT SE |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BIEMER, SWEN Inventor name: RIE, KYONG-TSCHONG Inventor name: LAUDIEN, GUENTHER Inventor name: RODRIGUEZ CABEO, EMILIO DR. |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AT DE ES FR GB IT PT SE |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: 7C 23C 16/28 B Ipc: 7C 23C 8/08 B Ipc: 7C 23C 8/38 B Ipc: 7C 23C 8/36 A |
|
17P | Request for examination filed |
Effective date: 20041028 |
|
AKX | Designation fees paid |
Designated state(s): AT DE ES FR GB IT PT SE |
|
17Q | First examination report despatched |
Effective date: 20070523 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20110403 |