IL105026A - Method and device to create a variable uterus of a wave controlled within aided by a chemical bond - Google Patents
Method and device to create a variable uterus of a wave controlled within aided by a chemical bondInfo
- Publication number
- IL105026A IL105026A IL10502693A IL10502693A IL105026A IL 105026 A IL105026 A IL 105026A IL 10502693 A IL10502693 A IL 10502693A IL 10502693 A IL10502693 A IL 10502693A IL 105026 A IL105026 A IL 105026A
- Authority
- IL
- Israel
- Prior art keywords
- plasma
- electrode
- cavity
- substrate
- process gas
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 36
- 238000003486 chemical etching Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 51
- 239000012212 insulator Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000007519 figuring Methods 0.000 claims description 2
- 229910021426 porous silicon Inorganic materials 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims 4
- 230000008033 biological extinction Effects 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000009499 grossing Methods 0.000 claims 1
- 238000012937 correction Methods 0.000 description 6
- XUKUURHRXDUEBC-KAYWLYCHSA-N Atorvastatin Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-KAYWLYCHSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- NQLVQOSNDJXLKG-UHFFFAOYSA-N prosulfocarb Chemical compound CCCN(CCC)C(=O)SCC1=CC=CC=C1 NQLVQOSNDJXLKG-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/854,718 US5292400A (en) | 1992-03-23 | 1992-03-23 | Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL105026A0 IL105026A0 (en) | 1993-07-08 |
| IL105026A true IL105026A (en) | 1996-05-14 |
Family
ID=25319390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL10502693A IL105026A (en) | 1992-03-23 | 1993-03-11 | Method and device to create a variable uterus of a wave controlled within aided by a chemical bond |
Country Status (6)
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5385633A (en) * | 1990-03-29 | 1995-01-31 | The United States Of America As Represented By The Secretary Of The Navy | Method for laser-assisted silicon etching using halocarbon ambients |
| JP3350237B2 (ja) * | 1994-08-29 | 2002-11-25 | 株式会社東芝 | エッチング方法及び装置 |
| US5811021A (en) * | 1995-02-28 | 1998-09-22 | Hughes Electronics Corporation | Plasma assisted chemical transport method and apparatus |
| US5996528A (en) * | 1996-07-02 | 1999-12-07 | Novellus Systems, Inc. | Method and apparatus for flowing gases into a manifold at high potential |
| US6030887A (en) * | 1998-02-26 | 2000-02-29 | Memc Electronic Materials, Inc. | Flattening process for epitaxial semiconductor wafers |
| US20010049196A1 (en) * | 1997-09-09 | 2001-12-06 | Roger Patrick | Apparatus for improving etch uniformity and methods therefor |
| US6294469B1 (en) | 1999-05-21 | 2001-09-25 | Plasmasil, Llc | Silicon wafering process flow |
| US6200908B1 (en) | 1999-08-04 | 2001-03-13 | Memc Electronic Materials, Inc. | Process for reducing waviness in semiconductor wafers |
| US7591957B2 (en) * | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| US7510664B2 (en) | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US20030042227A1 (en) * | 2001-08-29 | 2003-03-06 | Tokyo Electron Limited | Apparatus and method for tailoring an etch profile |
| US6660177B2 (en) | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| US20080190558A1 (en) * | 2002-04-26 | 2008-08-14 | Accretech Usa, Inc. | Wafer processing apparatus and method |
| US20080011332A1 (en) * | 2002-04-26 | 2008-01-17 | Accretech Usa, Inc. | Method and apparatus for cleaning a wafer substrate |
| US20080017316A1 (en) * | 2002-04-26 | 2008-01-24 | Accretech Usa, Inc. | Clean ignition system for wafer substrate processing |
| DE10239083B4 (de) * | 2002-08-26 | 2009-09-03 | Schott Ag | Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung |
| US20040110314A1 (en) * | 2002-12-05 | 2004-06-10 | Ravi Kramadhati V. | Silicon-on-insulator devices and methods for fabricating the same |
| US7500445B2 (en) * | 2003-01-27 | 2009-03-10 | Applied Materials, Inc. | Method and apparatus for cleaning a CVD chamber |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| US7297892B2 (en) * | 2003-08-14 | 2007-11-20 | Rapt Industries, Inc. | Systems and methods for laser-assisted plasma processing |
| US7304263B2 (en) * | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
| US8039052B2 (en) * | 2007-09-06 | 2011-10-18 | Intermolecular, Inc. | Multi-region processing system and heads |
| JP5567392B2 (ja) * | 2010-05-25 | 2014-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US12181801B2 (en) | 2021-05-03 | 2024-12-31 | Applied Materials, Inc. | Chamber and methods of treating a substrate after exposure to radiation |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179650A (ja) * | 1975-01-08 | 1976-07-12 | Hitachi Ltd | Supatsutaetsuchingusochi |
| US4233109A (en) * | 1976-01-16 | 1980-11-11 | Zaidan Hojin Handotai Kenkyu Shinkokai | Dry etching method |
| US4411733A (en) * | 1982-06-18 | 1983-10-25 | Bell Telephone Laboratories, Incorporated | SPER Device for material working |
| JPH0666298B2 (ja) * | 1983-02-03 | 1994-08-24 | 日電アネルバ株式会社 | ドライエッチング装置 |
| US4680086A (en) * | 1986-03-20 | 1987-07-14 | Motorola, Inc. | Dry etching of multi-layer structures |
| JPS62290885A (ja) * | 1986-06-10 | 1987-12-17 | Toshiba Corp | 反応性イオンエツチング装置 |
| JPH0638405B2 (ja) * | 1986-11-19 | 1994-05-18 | 東京応化工業株式会社 | プラズマ反応処理装置 |
| DE68910378T2 (de) * | 1988-05-06 | 1994-03-03 | Fujitsu Ltd | Anlage zur Erzeugung dünner Schichten. |
| FR2639567B1 (fr) * | 1988-11-25 | 1991-01-25 | France Etat | Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| JPH04362091A (ja) * | 1991-06-05 | 1992-12-15 | Mitsubishi Heavy Ind Ltd | プラズマ化学気相成長装置 |
-
1992
- 1992-03-23 US US07/854,718 patent/US5292400A/en not_active Expired - Fee Related
-
1993
- 1993-03-11 IL IL10502693A patent/IL105026A/en not_active IP Right Cessation
- 1993-03-16 TW TW082101949A patent/TW235378B/zh active
- 1993-03-22 NO NO93931029A patent/NO931029L/no unknown
- 1993-03-22 EP EP93302128A patent/EP0565259A1/en not_active Withdrawn
- 1993-03-23 JP JP5064413A patent/JPH0757911B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| NO931029D0 (no) | 1993-03-22 |
| TW235378B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-12-01 |
| EP0565259A1 (en) | 1993-10-13 |
| NO931029L (no) | 1993-09-24 |
| US5292400A (en) | 1994-03-08 |
| JPH0617267A (ja) | 1994-01-25 |
| JPH0757911B2 (ja) | 1995-06-21 |
| IL105026A0 (en) | 1993-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| HP | Change in proprietorship | ||
| RH | Patent void |