IE801543L - Manufacture of vmos transistors - Google Patents

Manufacture of vmos transistors

Info

Publication number
IE801543L
IE801543L IE801543A IE154380A IE801543L IE 801543 L IE801543 L IE 801543L IE 801543 A IE801543 A IE 801543A IE 154380 A IE154380 A IE 154380A IE 801543 L IE801543 L IE 801543L
Authority
IE
Ireland
Prior art keywords
manufacture
grooves
groove
disposed
vmos transistors
Prior art date
Application number
IE801543A
Other versions
IE50027B1 (en
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IE801543L publication Critical patent/IE801543L/en
Publication of IE50027B1 publication Critical patent/IE50027B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices

Abstract

In a method of fabricating a VM0S transistor of the type in which the gate and source are disposed in a relatively deep V-groove (8) and a relatively shallow V-groove (7) respectively, the grooves (8, 7) are formed simultaneously by anisotropic etching through a mask having a large and a small window so disposed as to correspond with the position of the grooves. <IMAGE> [GB2055247A]
IE1543/80A 1979-07-28 1980-07-24 Method of fabricating vmos transistors IE50027B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2930780A DE2930780C2 (en) 1979-07-28 1979-07-28 Method of manufacturing a VMOS transistor

Publications (2)

Publication Number Publication Date
IE801543L true IE801543L (en) 1981-01-28
IE50027B1 IE50027B1 (en) 1986-02-05

Family

ID=6077092

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1543/80A IE50027B1 (en) 1979-07-28 1980-07-24 Method of fabricating vmos transistors

Country Status (6)

Country Link
JP (1) JPS5621373A (en)
DE (1) DE2930780C2 (en)
FR (1) FR2462779A1 (en)
GB (1) GB2055247B (en)
IE (1) IE50027B1 (en)
IT (1) IT1194673B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570880A1 (en) * 1984-09-27 1986-03-28 Rca Corp METHOD FOR MANUFACTURING ISOLATED GRID FIELD EFFECT TRANSISTOR AND TRANSISTOR THUS OBTAINED
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
DE4435458C2 (en) * 1994-10-04 1998-07-02 Siemens Ag Semiconductor component controllable by field effect
EP1005091B1 (en) * 1998-11-17 2002-07-10 STMicroelectronics S.r.l. A method of manufacturing a vertical-channel MOSFET

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037B1 (en) * 1970-01-12 1975-01-10 Ibm
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
JPS5621373A (en) 1981-02-27
DE2930780A1 (en) 1981-01-29
IT8023733A0 (en) 1980-07-28
IT1194673B (en) 1988-09-22
IE50027B1 (en) 1986-02-05
FR2462779A1 (en) 1981-02-13
FR2462779B3 (en) 1982-04-02
DE2930780C2 (en) 1982-05-27
GB2055247A (en) 1981-02-25
GB2055247B (en) 1983-08-24

Similar Documents

Publication Publication Date Title
JPS5693367A (en) Manufacture of semiconductor device
EP0172192A4 (en) Process for forming slots of different types in self-aligned relationship using a mask.
IE811379L (en) Manufacturing a semiconductor device
JPS5284981A (en) Production of insulated gate type semiconductor device
IE801543L (en) Manufacture of vmos transistors
JPS5362985A (en) Mis type field effect transistor and its production
JPS5365078A (en) Production of junction type field effect transistor
JPS5578574A (en) Manufacture of insulated-gate field-effect transistor
JPS5543850A (en) Manufacture of complementary mos semiconductor device
GB2013399A (en) Improvements in or relating to the production of MOS-transistors
JPS57159066A (en) Manufacture of semiconductor device
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS5370770A (en) Production of schottky barrier gate type field effect transistor
JPS5299787A (en) Junction type field effect transistor and its production
JPS5372474A (en) Manufacture for field effect transistor
JPS5364481A (en) Production of schottky type field effect transistor
JPS6459958A (en) Vertical field-effect transistor
JPS5673470A (en) Manufacture of semiconductor device
JPS54107269A (en) Non-volatile semiconductor memory and its production
JPS5574172A (en) Interpolation type mos transistor
JPS5384573A (en) Manufacture for mis type semiconductor device
JPS5649573A (en) Semiconductor device
JPS57128979A (en) Manufacture of junction type field-effect transistor
JPS5785231A (en) Formation of positional matching mark
JPS52100875A (en) Mos transistor