GB2055247B - Method of fabricating vmos transistors - Google Patents

Method of fabricating vmos transistors

Info

Publication number
GB2055247B
GB2055247B GB8020113A GB8020113A GB2055247B GB 2055247 B GB2055247 B GB 2055247B GB 8020113 A GB8020113 A GB 8020113A GB 8020113 A GB8020113 A GB 8020113A GB 2055247 B GB2055247 B GB 2055247B
Authority
GB
United Kingdom
Prior art keywords
fabricating
vmos transistors
vmos
transistors
fabricating vmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8020113A
Other versions
GB2055247A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB2055247A publication Critical patent/GB2055247A/en
Application granted granted Critical
Publication of GB2055247B publication Critical patent/GB2055247B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
GB8020113A 1979-07-28 1980-06-19 Method of fabricating vmos transistors Expired GB2055247B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2930780A DE2930780C2 (en) 1979-07-28 1979-07-28 Method of manufacturing a VMOS transistor

Publications (2)

Publication Number Publication Date
GB2055247A GB2055247A (en) 1981-02-25
GB2055247B true GB2055247B (en) 1983-08-24

Family

ID=6077092

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8020113A Expired GB2055247B (en) 1979-07-28 1980-06-19 Method of fabricating vmos transistors

Country Status (6)

Country Link
JP (1) JPS5621373A (en)
DE (1) DE2930780C2 (en)
FR (1) FR2462779A1 (en)
GB (1) GB2055247B (en)
IE (1) IE50027B1 (en)
IT (1) IT1194673B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570880A1 (en) * 1984-09-27 1986-03-28 Rca Corp METHOD FOR MANUFACTURING ISOLATED GRID FIELD EFFECT TRANSISTOR AND TRANSISTOR THUS OBTAINED
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
DE4435458C2 (en) * 1994-10-04 1998-07-02 Siemens Ag Semiconductor component controllable by field effect
EP1005091B1 (en) * 1998-11-17 2002-07-10 STMicroelectronics S.r.l. A method of manufacturing a vertical-channel MOSFET

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037B1 (en) * 1970-01-12 1975-01-10 Ibm
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
JPS5621373A (en) 1981-02-27
DE2930780A1 (en) 1981-01-29
IT8023733A0 (en) 1980-07-28
IE801543L (en) 1981-01-28
IT1194673B (en) 1988-09-22
IE50027B1 (en) 1986-02-05
FR2462779A1 (en) 1981-02-13
FR2462779B3 (en) 1982-04-02
DE2930780C2 (en) 1982-05-27
GB2055247A (en) 1981-02-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee