FR2462779B3 - - Google Patents

Info

Publication number
FR2462779B3
FR2462779B3 FR8016208A FR8016208A FR2462779B3 FR 2462779 B3 FR2462779 B3 FR 2462779B3 FR 8016208 A FR8016208 A FR 8016208A FR 8016208 A FR8016208 A FR 8016208A FR 2462779 B3 FR2462779 B3 FR 2462779B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8016208A
Other languages
French (fr)
Other versions
FR2462779A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2462779A1 publication Critical patent/FR2462779A1/en
Application granted granted Critical
Publication of FR2462779B3 publication Critical patent/FR2462779B3/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30608Anisotropic liquid etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
FR8016208A 1979-07-28 1980-07-23 METHOD OF MANUFACTURING VMOS TRANSISTORS Granted FR2462779A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2930780A DE2930780C2 (en) 1979-07-28 1979-07-28 Method of manufacturing a VMOS transistor

Publications (2)

Publication Number Publication Date
FR2462779A1 FR2462779A1 (en) 1981-02-13
FR2462779B3 true FR2462779B3 (en) 1982-04-02

Family

ID=6077092

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016208A Granted FR2462779A1 (en) 1979-07-28 1980-07-23 METHOD OF MANUFACTURING VMOS TRANSISTORS

Country Status (6)

Country Link
JP (1) JPS5621373A (en)
DE (1) DE2930780C2 (en)
FR (1) FR2462779A1 (en)
GB (1) GB2055247B (en)
IE (1) IE50027B1 (en)
IT (1) IT1194673B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570880A1 (en) * 1984-09-27 1986-03-28 Rca Corp METHOD FOR MANUFACTURING ISOLATED GRID FIELD EFFECT TRANSISTOR AND TRANSISTOR THUS OBTAINED
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
DE4435458C2 (en) * 1994-10-04 1998-07-02 Siemens Ag Semiconductor component controllable by field effect
EP1005091B1 (en) * 1998-11-17 2002-07-10 STMicroelectronics S.r.l. A method of manufacturing a vertical-channel MOSFET

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037B1 (en) * 1970-01-12 1975-01-10 Ibm
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
JPS5621373A (en) 1981-02-27
DE2930780A1 (en) 1981-01-29
IT8023733A0 (en) 1980-07-28
IE801543L (en) 1981-01-28
IT1194673B (en) 1988-09-22
IE50027B1 (en) 1986-02-05
FR2462779A1 (en) 1981-02-13
DE2930780C2 (en) 1982-05-27
GB2055247A (en) 1981-02-25
GB2055247B (en) 1983-08-24

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