IE50027B1 - Method of fabricating vmos transistors - Google Patents

Method of fabricating vmos transistors

Info

Publication number
IE50027B1
IE50027B1 IE1543/80A IE154380A IE50027B1 IE 50027 B1 IE50027 B1 IE 50027B1 IE 1543/80 A IE1543/80 A IE 1543/80A IE 154380 A IE154380 A IE 154380A IE 50027 B1 IE50027 B1 IE 50027B1
Authority
IE
Ireland
Prior art keywords
type
deep
groove
transistor
shallow
Prior art date
Application number
IE1543/80A
Other languages
English (en)
Other versions
IE801543L (en
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IE801543L publication Critical patent/IE801543L/xx
Publication of IE50027B1 publication Critical patent/IE50027B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
IE1543/80A 1979-07-28 1980-07-24 Method of fabricating vmos transistors IE50027B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2930780A DE2930780C2 (de) 1979-07-28 1979-07-28 Verfahren zur Herstellung eines VMOS-Transistors

Publications (2)

Publication Number Publication Date
IE801543L IE801543L (en) 1981-01-28
IE50027B1 true IE50027B1 (en) 1986-02-05

Family

ID=6077092

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1543/80A IE50027B1 (en) 1979-07-28 1980-07-24 Method of fabricating vmos transistors

Country Status (6)

Country Link
JP (1) JPS5621373A (ref)
DE (1) DE2930780C2 (ref)
FR (1) FR2462779A1 (ref)
GB (1) GB2055247B (ref)
IE (1) IE50027B1 (ref)
IT (1) IT1194673B (ref)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
DE4435458C2 (de) * 1994-10-04 1998-07-02 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
EP1005091B1 (en) * 1998-11-17 2002-07-10 STMicroelectronics S.r.l. A method of manufacturing a vertical-channel MOSFET

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037B1 (ref) * 1970-01-12 1975-01-10 Ibm
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
GB2055247B (en) 1983-08-24
FR2462779B3 (ref) 1982-04-02
IT1194673B (it) 1988-09-22
IE801543L (en) 1981-01-28
JPS5621373A (en) 1981-02-27
GB2055247A (en) 1981-02-25
IT8023733A0 (it) 1980-07-28
DE2930780A1 (de) 1981-01-29
DE2930780C2 (de) 1982-05-27
FR2462779A1 (fr) 1981-02-13

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