JPS5621373A - Method of manufacturing vvmos transistor - Google Patents
Method of manufacturing vvmos transistorInfo
- Publication number
- JPS5621373A JPS5621373A JP8529480A JP8529480A JPS5621373A JP S5621373 A JPS5621373 A JP S5621373A JP 8529480 A JP8529480 A JP 8529480A JP 8529480 A JP8529480 A JP 8529480A JP S5621373 A JPS5621373 A JP S5621373A
- Authority
- JP
- Japan
- Prior art keywords
- vvmos
- transistor
- manufacturing
- vvmos transistor
- manufacturing vvmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/644—Anisotropic liquid etching
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2930780A DE2930780C2 (de) | 1979-07-28 | 1979-07-28 | Verfahren zur Herstellung eines VMOS-Transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5621373A true JPS5621373A (en) | 1981-02-27 |
Family
ID=6077092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8529480A Pending JPS5621373A (en) | 1979-07-28 | 1980-06-25 | Method of manufacturing vvmos transistor |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5621373A (ref) |
| DE (1) | DE2930780C2 (ref) |
| FR (1) | FR2462779A1 (ref) |
| GB (1) | GB2055247B (ref) |
| IE (1) | IE50027B1 (ref) |
| IT (1) | IT1194673B (ref) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2570880A1 (fr) * | 1984-09-27 | 1986-03-28 | Rca Corp | Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu |
| US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
| GB2199694A (en) * | 1986-12-23 | 1988-07-13 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
| US5023196A (en) * | 1990-01-29 | 1991-06-11 | Motorola Inc. | Method for forming a MOSFET with substrate source contact |
| MY107475A (en) * | 1990-05-31 | 1995-12-30 | Canon Kk | Semiconductor device and method for producing the same. |
| DE4435458C2 (de) * | 1994-10-04 | 1998-07-02 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
| EP1005091B1 (en) * | 1998-11-17 | 2002-07-10 | STMicroelectronics S.r.l. | A method of manufacturing a vertical-channel MOSFET |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2076037B1 (ref) * | 1970-01-12 | 1975-01-10 | Ibm | |
| US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
-
1979
- 1979-07-28 DE DE2930780A patent/DE2930780C2/de not_active Expired
-
1980
- 1980-06-19 GB GB8020113A patent/GB2055247B/en not_active Expired
- 1980-06-25 JP JP8529480A patent/JPS5621373A/ja active Pending
- 1980-07-23 FR FR8016208A patent/FR2462779A1/fr active Granted
- 1980-07-24 IE IE1543/80A patent/IE50027B1/en unknown
- 1980-07-28 IT IT23733/80A patent/IT1194673B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IE50027B1 (en) | 1986-02-05 |
| GB2055247B (en) | 1983-08-24 |
| FR2462779B3 (ref) | 1982-04-02 |
| IT1194673B (it) | 1988-09-22 |
| IE801543L (en) | 1981-01-28 |
| GB2055247A (en) | 1981-02-25 |
| IT8023733A0 (it) | 1980-07-28 |
| DE2930780A1 (de) | 1981-01-29 |
| DE2930780C2 (de) | 1982-05-27 |
| FR2462779A1 (fr) | 1981-02-13 |
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