IT1194673B - Metodo di fabbricazione di transistori cosiddetti vmos - Google Patents

Metodo di fabbricazione di transistori cosiddetti vmos

Info

Publication number
IT1194673B
IT1194673B IT23733/80A IT2373380A IT1194673B IT 1194673 B IT1194673 B IT 1194673B IT 23733/80 A IT23733/80 A IT 23733/80A IT 2373380 A IT2373380 A IT 2373380A IT 1194673 B IT1194673 B IT 1194673B
Authority
IT
Italy
Prior art keywords
manufacture
vmos transistors
called
called vmos
transistors
Prior art date
Application number
IT23733/80A
Other languages
English (en)
Italian (it)
Other versions
IT8023733A0 (it
Inventor
Leslie Miskin
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IT8023733A0 publication Critical patent/IT8023733A0/it
Application granted granted Critical
Publication of IT1194673B publication Critical patent/IT1194673B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/668Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251Source or drain electrodes for field-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/644Anisotropic liquid etching
IT23733/80A 1979-07-28 1980-07-28 Metodo di fabbricazione di transistori cosiddetti vmos IT1194673B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2930780A DE2930780C2 (de) 1979-07-28 1979-07-28 Verfahren zur Herstellung eines VMOS-Transistors

Publications (2)

Publication Number Publication Date
IT8023733A0 IT8023733A0 (it) 1980-07-28
IT1194673B true IT1194673B (it) 1988-09-22

Family

ID=6077092

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23733/80A IT1194673B (it) 1979-07-28 1980-07-28 Metodo di fabbricazione di transistori cosiddetti vmos

Country Status (6)

Country Link
JP (1) JPS5621373A (ref)
DE (1) DE2930780C2 (ref)
FR (1) FR2462779A1 (ref)
GB (1) GB2055247B (ref)
IE (1) IE50027B1 (ref)
IT (1) IT1194673B (ref)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
DE4435458C2 (de) * 1994-10-04 1998-07-02 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
EP1005091B1 (en) * 1998-11-17 2002-07-10 STMicroelectronics S.r.l. A method of manufacturing a vertical-channel MOSFET

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037B1 (ref) * 1970-01-12 1975-01-10 Ibm
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
IE50027B1 (en) 1986-02-05
GB2055247B (en) 1983-08-24
FR2462779B3 (ref) 1982-04-02
IE801543L (en) 1981-01-28
JPS5621373A (en) 1981-02-27
GB2055247A (en) 1981-02-25
IT8023733A0 (it) 1980-07-28
DE2930780A1 (de) 1981-01-29
DE2930780C2 (de) 1982-05-27
FR2462779A1 (fr) 1981-02-13

Similar Documents

Publication Publication Date Title
IT1064386B (it) Procedimento per la fabbricazione di transistori
PL198010A1 (pl) Sposob wytwarzania kwasu tereftalowego
IT1140567B (it) Servocircuito di controllo
PL214574A1 (pl) Sposob wytwarzania nitroparafin
PL200289A1 (pl) Sposob wytwarzania zwiazkow 3-chlorocefemowych
IT1194673B (it) Metodo di fabbricazione di transistori cosiddetti vmos
PL214336A1 (pl) Sposob wytwarzania tiokarbaminianow
AR225780A1 (es) Procedimiento de obtencion de glucosa-isomerasa
PL202880A1 (pl) Sposob wytwarzania temoutwardzalnych srodkow wiazacych do powlok osadzanych katodowo
KR850003292A (ko) 옥사졸린의 제조방법
IT1081020B (it) Metodo di fabbricazione di aspidospermidine
UA7078A1 (uk) Спосіб одержання 2-бромпохідних аргоалкалоідів
IT7915127V0 (it) Indicatoe di vlivello
PL205250A1 (pl) Sposob wytwarzania dwupodstawionych pochodnych cyjanamidu
IT7923070V0 (it) Gradino di scala.
PL205051A1 (pl) Sposob wytwarzania stabilizowanych dwualkilohydroksyglinow
ES491130A0 (es) Metodo de preparar isoindoldionas
PL98748B1 (pl) Sposob wytwarzania plastyfikatorow
PL207318A1 (pl) Sposob wytwarzania ukladow scalonych
PL212259A1 (pl) Sposob modyfikacji polichlorku winylu
PL203830A1 (pl) Sposob wytwarzania propanoloamin
PL203906A1 (pl) Sposob wytwarzania 1-aminoantrochinonu
PL206484A1 (pl) Sposob wytwarzania oligorekombinatow
PL213090A1 (pl) Sposob wytwarzania amidow glicylo-dwupeptydow
PL197016A1 (pl) Sposob wytwarzania amidu kwasu heksahydrochromano-4-karboksylowego