HUT51685A - Apparatus for increasing form monocristals of optically transparent metal compound with high melting point - Google Patents

Apparatus for increasing form monocristals of optically transparent metal compound with high melting point

Info

Publication number
HUT51685A
HUT51685A HU34187A HU34187A HUT51685A HU T51685 A HUT51685 A HU T51685A HU 34187 A HU34187 A HU 34187A HU 34187 A HU34187 A HU 34187A HU T51685 A HUT51685 A HU T51685A
Authority
HU
Hungary
Prior art keywords
power
melting
pct
optically transparent
transparent metal
Prior art date
Application number
HU34187A
Other languages
English (en)
Other versions
HU203134B (en
Inventor
Dmitry Y Kravetsky
Leonid P Egorov
Leonid S Okun
Lev M Zatulovsky
Boris B Pelts
Viktor V Averyanov
Original Assignee
Vni Pk I T I Elektrotermichesk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vni Pk I T I Elektrotermichesk filed Critical Vni Pk I T I Elektrotermichesk
Publication of HUT51685A publication Critical patent/HUT51685A/hu
Publication of HU203134B publication Critical patent/HU203134B/hu

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
HU88341A 1986-11-26 1987-10-23 Apparatus for increasing monochristals of potically transvisible metal compound of high melting point HU203134B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU864149059A SU1592414A1 (ru) 1986-11-26 1986-11-26 Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
PCT/SU1987/000118 WO1988003968A1 (en) 1986-11-26 1987-10-23 Device for growing profiled monocrystals

Publications (2)

Publication Number Publication Date
HUT51685A true HUT51685A (en) 1990-05-28
HU203134B HU203134B (en) 1991-05-28

Family

ID=21268241

Family Applications (2)

Application Number Title Priority Date Filing Date
HU88326A HU203587B (en) 1986-11-26 1987-10-23 Process for growing shaped one-cristals of optically transparent metal compound of high melting point
HU88341A HU203134B (en) 1986-11-26 1987-10-23 Apparatus for increasing monochristals of potically transvisible metal compound of high melting point

Family Applications Before (1)

Application Number Title Priority Date Filing Date
HU88326A HU203587B (en) 1986-11-26 1987-10-23 Process for growing shaped one-cristals of optically transparent metal compound of high melting point

Country Status (13)

Country Link
US (2) US4915773A (hu)
EP (2) EP0290628B1 (hu)
JP (2) JPH01501467A (hu)
CN (2) CN1010037B (hu)
AT (2) ATE71994T1 (hu)
AU (2) AU592921B2 (hu)
BR (2) BR8705753A (hu)
DE (1) DE3776333D1 (hu)
HU (2) HU203587B (hu)
IN (2) IN167160B (hu)
SU (1) SU1592414A1 (hu)
WO (2) WO1988003967A1 (hu)
YU (1) YU215187A (hu)

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US5441014A (en) * 1991-06-24 1995-08-15 Komatsu Electronic Metals Co., Ltd. Apparatus for pulling up a single crystal
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JPH05194075A (ja) * 1992-01-24 1993-08-03 Nec Corp 単結晶育成法
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
US5394420A (en) * 1994-01-27 1995-02-28 Trw Inc. Multiform crystal and apparatus for fabrication
JPH09110582A (ja) * 1995-10-11 1997-04-28 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 結晶製造装置
US5900059A (en) * 1996-05-29 1999-05-04 Komatsu Electronic Metals Co., Ltd. Method and apparatus for fabricating semiconductor single crystal
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US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7632361B2 (en) * 2004-05-06 2009-12-15 Tini Alloy Company Single crystal shape memory alloy devices and methods
RU2261297C1 (ru) * 2004-08-05 2005-09-27 Амосов Владимир Ильич Способ выращивания монокристаллов из расплава методом амосова
US20060118210A1 (en) * 2004-10-04 2006-06-08 Johnson A D Portable energy storage devices and methods
US7763342B2 (en) * 2005-03-31 2010-07-27 Tini Alloy Company Tear-resistant thin film methods of fabrication
US20070246233A1 (en) * 2006-04-04 2007-10-25 Johnson A D Thermal actuator for fire protection sprinkler head
US20080213062A1 (en) * 2006-09-22 2008-09-04 Tini Alloy Company Constant load fastener
US20080075557A1 (en) * 2006-09-22 2008-03-27 Johnson A David Constant load bolt
US8584767B2 (en) * 2007-01-25 2013-11-19 Tini Alloy Company Sprinkler valve with active actuation
US8684101B2 (en) * 2007-01-25 2014-04-01 Tini Alloy Company Frangible shape memory alloy fire sprinkler valve actuator
US8007674B2 (en) 2007-07-30 2011-08-30 Tini Alloy Company Method and devices for preventing restenosis in cardiovascular stents
US8556969B2 (en) 2007-11-30 2013-10-15 Ormco Corporation Biocompatible copper-based single-crystal shape memory alloys
US8382917B2 (en) * 2007-12-03 2013-02-26 Ormco Corporation Hyperelastic shape setting devices and fabrication methods
US7842143B2 (en) * 2007-12-03 2010-11-30 Tini Alloy Company Hyperelastic shape setting devices and fabrication methods
CN101868075B (zh) * 2009-04-15 2013-01-16 西北工业大学 一种用于超高温定向凝固的金属电阻加热装置
CN103160917A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的拉制模板
KR101348737B1 (ko) * 2011-12-13 2014-01-09 (주) 다애테크 어퍼 쉴드 어셈블리 및 이를 구비한 사파이어 잉곳 제조장치
RU2507320C2 (ru) * 2012-02-01 2014-02-20 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Устройство и способ выращивания профилированных кристаллов тугоплавких соединений
CN103374755A (zh) * 2012-04-28 2013-10-30 洛阳高科钼钨材料有限公司 非整体式坩埚
US10124197B2 (en) 2012-08-31 2018-11-13 TiNi Allot Company Fire sprinkler valve actuator
RU2534144C1 (ru) * 2013-06-27 2014-11-27 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Способ выращивания профилированных кристаллов тугоплавких соединений
CN103469304B (zh) * 2013-08-23 2015-11-25 江苏中电振华晶体技术有限公司 多支成形蓝宝石长晶装置及其长晶方法
CN103726101B (zh) * 2014-01-20 2016-04-13 江苏苏博瑞光电设备科技有限公司 一种减少导模法生长管状蓝宝石晶体开裂的收尾方法
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
CN108560049B (zh) * 2018-04-16 2019-09-06 湖南柿竹园有色金属有限责任公司 颜色可控的大尺寸多彩铋晶体的制备方法

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Also Published As

Publication number Publication date
CN87108014A (zh) 1988-06-08
EP0290628A4 (de) 1989-03-23
EP0290629A4 (de) 1989-03-22
AU1058188A (en) 1988-06-16
IN168216B (hu) 1991-02-23
EP0290628B1 (de) 1992-01-22
JPH01501467A (ja) 1989-05-25
US4915773A (en) 1990-04-10
HUT51684A (en) 1990-05-28
SU1592414A1 (ru) 1990-09-15
AU1058288A (en) 1988-06-16
ATE71994T1 (de) 1992-02-15
HU203134B (en) 1991-05-28
WO1988003968A1 (en) 1988-06-02
HU203587B (en) 1991-08-28
YU215187A (en) 1988-10-31
CN87108007A (zh) 1988-06-08
DE3776333D1 (de) 1992-03-05
IN167160B (hu) 1990-09-08
BR8706332A (pt) 1988-07-19
AU592921B2 (en) 1990-01-25
WO1988003967A1 (en) 1988-06-02
EP0290629A1 (de) 1988-11-17
US4957713A (en) 1990-09-18
ATE71993T1 (de) 1992-02-15
JPH01501468A (ja) 1989-05-25
AU592922B2 (en) 1990-01-25
CN1010036B (zh) 1990-10-17
EP0290629B1 (en) 1992-01-22
BR8705753A (pt) 1988-06-28
EP0290628A1 (de) 1988-11-17
CN1010037B (zh) 1990-10-17

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Legal Events

Date Code Title Description
HMM4 Cancellation of final prot. due to non-payment of fee