HUE050211T2 - Félvezetõ eszköz javított végzõdési szerkezettel nagyfeszültségû alkalmazásokhoz és ennek elõállítási eljárása - Google Patents

Félvezetõ eszköz javított végzõdési szerkezettel nagyfeszültségû alkalmazásokhoz és ennek elõállítási eljárása

Info

Publication number
HUE050211T2
HUE050211T2 HUE12864072A HUE12864072A HUE050211T2 HU E050211 T2 HUE050211 T2 HU E050211T2 HU E12864072 A HUE12864072 A HU E12864072A HU E12864072 A HUE12864072 A HU E12864072A HU E050211 T2 HUE050211 T2 HU E050211T2
Authority
HU
Hungary
Prior art keywords
manufacturing
semiconductor device
high voltage
same
termination structure
Prior art date
Application number
HUE12864072A
Other languages
English (en)
Inventor
Yih-Yin Lin
Pai-Li Lin
Chih-Wei Hsu
Original Assignee
Vishay Gen Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Gen Semiconductor Llc filed Critical Vishay Gen Semiconductor Llc
Publication of HUE050211T2 publication Critical patent/HUE050211T2/hu

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
HUE12864072A 2012-01-04 2012-12-13 Félvezetõ eszköz javított végzõdési szerkezettel nagyfeszültségû alkalmazásokhoz és ennek elõállítási eljárása HUE050211T2 (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/343,435 US20130168765A1 (en) 2012-01-04 2012-01-04 Trench dmos device with improved termination structure for high voltage applications

Publications (1)

Publication Number Publication Date
HUE050211T2 true HUE050211T2 (hu) 2020-11-30

Family

ID=48694155

Family Applications (1)

Application Number Title Priority Date Filing Date
HUE12864072A HUE050211T2 (hu) 2012-01-04 2012-12-13 Félvezetõ eszköz javított végzõdési szerkezettel nagyfeszültségû alkalmazásokhoz és ennek elõállítási eljárása

Country Status (9)

Country Link
US (1) US20130168765A1 (hu)
EP (1) EP2801114B1 (hu)
JP (1) JP6287857B2 (hu)
KR (1) KR101966148B1 (hu)
CN (1) CN104145341A (hu)
ES (1) ES2812544T3 (hu)
HU (1) HUE050211T2 (hu)
TW (1) TWI517396B (hu)
WO (1) WO2013103491A1 (hu)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030618A (ja) 2011-07-28 2013-02-07 Rohm Co Ltd 半導体装置
TWM435722U (en) * 2012-03-22 2012-08-11 Excelliance Mos Corp Power MOSFET
DE102013108518B4 (de) 2013-08-07 2016-11-24 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen derselben
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
TWI546970B (zh) 2014-05-13 2016-08-21 帥群微電子股份有限公司 半導體元件的終端結構及其製造方法
US20170018657A1 (en) * 2015-07-14 2017-01-19 United Silicon Carbide, Inc. Vertical jfet made using a reduced mask set
JP2017045969A (ja) * 2015-08-28 2017-03-02 株式会社タムラ製作所 ショットキーバリアダイオード
TWI576920B (zh) * 2015-11-20 2017-04-01 敦南科技股份有限公司 二極體元件及其製造方法
US9818862B2 (en) 2016-01-05 2017-11-14 Nxp Usa, Inc. Semiconductor device with floating field plates
JP6681809B2 (ja) * 2016-09-14 2020-04-15 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
US11081554B2 (en) 2017-10-12 2021-08-03 Semiconductor Components Industries, Llc Insulated gate semiconductor device having trench termination structure and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
CN110047944A (zh) * 2019-04-25 2019-07-23 江阴新顺微电子有限公司 一种低成本的tmbs器件结构及制造方法
JP7415537B2 (ja) * 2019-12-18 2024-01-17 Tdk株式会社 ショットキーバリアダイオード
JP7371484B2 (ja) * 2019-12-18 2023-10-31 Tdk株式会社 ショットキーバリアダイオード
TWI743818B (zh) * 2020-06-02 2021-10-21 台灣半導體股份有限公司 具有多保護環結構之蕭特基二極體
EP4075518A1 (en) * 2021-04-14 2022-10-19 Nexperia B.V. Semiconductor device trench termination structure
CN113690234A (zh) * 2021-08-25 2021-11-23 威星国际半导体(深圳)有限公司 电力电子半导体器件
CN115472497A (zh) * 2022-07-28 2022-12-13 桑德斯微电子器件（南京）有限公司 一种改善沟槽型mos肖特基高温反偏老化性能的方法及器件

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US6396090B1 (en) * 2000-09-22 2002-05-28 Industrial Technology Research Institute Trench MOS device and termination structure
US6420768B1 (en) * 2000-12-15 2002-07-16 General Semiconductor, Inc. Trench schottky barrier rectifier and method of making the same
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US7973381B2 (en) * 2003-09-08 2011-07-05 International Rectifier Corporation Thick field oxide termination for trench schottky device
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
JP2009505433A (ja) * 2005-08-17 2009-02-05 インターナショナル レクティファイアー コーポレイション ゲートトレンチで相互接続されたパワー半導体デバイス
JP5050329B2 (ja) * 2005-08-26 2012-10-17 サンケン電気株式会社 トレンチ構造半導体装置及びその製造方法
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Also Published As

Publication number Publication date
JP2015507849A (ja) 2015-03-12
ES2812544T3 (es) 2021-03-17
EP2801114A1 (en) 2014-11-12
KR20140114356A (ko) 2014-09-26
TW201336080A (zh) 2013-09-01
EP2801114A4 (en) 2015-08-26
KR101966148B1 (ko) 2019-04-05
WO2013103491A1 (en) 2013-07-11
CN104145341A (zh) 2014-11-12
EP2801114B1 (en) 2020-06-03
TWI517396B (zh) 2016-01-11
US20130168765A1 (en) 2013-07-04
JP6287857B2 (ja) 2018-03-07

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