HU185711B - Semiconductor storing element with two fets - Google Patents
Semiconductor storing element with two fets Download PDFInfo
- Publication number
- HU185711B HU185711B HU821577A HU157782A HU185711B HU 185711 B HU185711 B HU 185711B HU 821577 A HU821577 A HU 821577A HU 157782 A HU157782 A HU 157782A HU 185711 B HU185711 B HU 185711B
- Authority
- HU
- Hungary
- Prior art keywords
- semiconductor memory
- storage element
- transistor
- memory element
- semiconductor storage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD81230022A DD160601A3 (de) | 1981-05-18 | 1981-05-18 | Halbleiterspeicherelement mit 2 feldeffekttransistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HU185711B true HU185711B (en) | 1985-03-28 |
Family
ID=5530961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HU821577A HU185711B (en) | 1981-05-18 | 1982-05-18 | Semiconductor storing element with two fets |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5828866A (ja) |
| CS (1) | CS240436B1 (ja) |
| DD (1) | DD160601A3 (ja) |
| DE (1) | DE3212945A1 (ja) |
| HU (1) | HU185711B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025269A (ja) * | 1983-07-21 | 1985-02-08 | Hitachi Ltd | 半導体記憶素子 |
| JPH01133357A (ja) * | 1987-11-18 | 1989-05-25 | Fujitsu Ltd | 半導体記憶装置 |
| DE59105063D1 (de) * | 1991-01-09 | 1995-05-04 | Siemens Ag | Speicherzellenanordnung und verfahren zu deren betrieb. |
-
1981
- 1981-05-18 DD DD81230022A patent/DD160601A3/de not_active IP Right Cessation
-
1982
- 1982-04-07 DE DE19823212945 patent/DE3212945A1/de not_active Withdrawn
- 1982-05-03 CS CS823144A patent/CS240436B1/cs unknown
- 1982-05-18 JP JP57082534A patent/JPS5828866A/ja active Pending
- 1982-05-18 HU HU821577A patent/HU185711B/hu unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE3212945A1 (de) | 1982-12-09 |
| CS240436B1 (en) | 1986-02-13 |
| JPS5828866A (ja) | 1983-02-19 |
| DD160601A3 (de) | 1983-11-16 |
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