HRP20160559T4 - Optoelectronic devices with organometal perovskites with mixed anions - Google Patents

Optoelectronic devices with organometal perovskites with mixed anions Download PDF

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HRP20160559T4
HRP20160559T4 HRP20160559TT HRP20160559T HRP20160559T4 HR P20160559 T4 HRP20160559 T4 HR P20160559T4 HR P20160559T T HRP20160559T T HR P20160559TT HR P20160559 T HRP20160559 T HR P20160559T HR P20160559 T4 HRP20160559 T4 HR P20160559T4
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unsubstituted
perovskite
photovoltaic device
electrode
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HRP20160559TT
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Henry Snaith
Michael Lee
Takuro MURAKAMI
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Oxford University Innovation Limited
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    • H—ELECTRICITY
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/24—Lead compounds
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Claims (13)

1. Fotonaponski uređaj koji sadrži perovskit s miješanim anionima, naznačen time, što perovskit s miješanim anionima sadrži dva ili više različitih aniona odabranih iz halidnih aniona.1. A photovoltaic device containing a perovskite with mixed anions, characterized in that the perovskite with mixed anions contains two or more different anions selected from halide anions. 2. Fotonaponski uređaj prema patentnom zahtjevu 1, naznačen time, što je perovskit s miješanim anionima senzibilizacijskog materijala.2. Photovoltaic device according to claim 1, characterized in that it is a perovskite with mixed anions of the sensitizing material. 3. Fotonaponski uređaj prema patentnom zahtjevu 1 ili 2, naznačen time, što perovskit s miješanim anionima sadrži prvi kation, drugi kation i spomenuta dva ili više različitih aniona, te opcionalno naznačen time, što je drugi kation metalni kation, poželjno dvovalentni metalni kation, a najpoželjnije odabran iz Sn2+ i Pb2+.3. Photovoltaic device according to patent claim 1 or 2, characterized in that the perovskite with mixed anions contains a first cation, a second cation, and mentioned two or more different anions, and optionally characterized in that the second cation is a metal cation, preferably a divalent metal cation, and most preferably selected from Sn2+ and Pb2+. 4. Fotonaponski uređaj prema patentnom zahtjevu 3, naznačen time, što je prvi kation organski kation, a poželjno organski kation je bilo što od sljedećeg: organski kation formule (R1R2R3R4N)+, naznačen time, što je R1 vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril, R2 je vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril; R3 je vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril; a R4 je vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril; organski kation formule (R5NH3)+, naznačen time, što je R5 vodik ili nesupstituirani ili supstituirani C1-C20 alkil; i organski kation formule (R5R6N=CH-NR7R8)+, naznačen time, što je R5 vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril; R6 je vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril; R7 je vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril; a R8 je vodik, nesupstituirani ili supstituirani C1-C20 alkil ili nesupstituirani ili supstituirani aril, a formula je poželjno (H2N=CH-NH2)+.4. Photovoltaic device according to claim 3, characterized in that the first cation is an organic cation, and preferably the organic cation is any of the following: an organic cation of the formula (R1R2R3R4N)+, characterized in that R1 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl, R2 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl; R3 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl; and R4 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl; an organic cation of the formula (R5NH3)+, characterized in that R5 is hydrogen or unsubstituted or substituted C1-C20 alkyl; and an organic cation of the formula (R5R6N=CH-NR7R8)+, characterized in that R5 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl; R 6 is hydrogen, unsubstituted or substituted C 1 -C 20 alkyl or unsubstituted or substituted aryl; R7 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl; and R8 is hydrogen, unsubstituted or substituted C1-C20 alkyl or unsubstituted or substituted aryl, and the formula is preferably (H2N=CH-NH2)+. 5. Fotonaponski uređaj prema bilo kojem od prethodnih patentnih zahtjeva, naznačen time, što perovskit predstavlja spoj perovskita formule (I): [A][B][X]3(I) naznačen time, što: [A] je najmanje jedan organski kation; [B] je najmanje jedan metalni kation; i [X] su spomenuta dva ili više različitih aniona.5. Photovoltaic device according to any of the preceding patent claims, characterized in that the perovskite is a perovskite compound of the formula (I): [A][B][X]3(I) characterized by the fact that: [A] is at least one organic cation; [B] is at least one metal cation; and [X] two or more different anions are mentioned. 6. Fotonaponski uređaj prema bilo kojem patentnom zahtjevu od 1 do 5, naznačen time, što perovskit predstavlja spoj formule (IIa): ABX3zX'3(1-z)(IIa) naznačen time, što: A je organski kation formule (R5R6N=CH-NR7R8)+, naznačen time, što: R5, R6, R7 i R8 su zasebno odabrani iz vodika, nesupstituiranog ili supstituiranog C1-C20 alkila i nesupstituiranog ili supstituiranog arila; B je metalni kation; X je prvi halidni anion; X' je drugi halidni anion koji se razlikuje od prvog halidnog aniona; i z ima vrijednost veću od 0, a manju od 1, a poželjno je da z ima vrijednost od 0,05 do 0,95.6. Photovoltaic device according to any patent claim from 1 to 5, characterized in that the perovskite is a compound of formula (IIa): ABX3zX'3(1-z)(IIa) characterized by the fact that: A is an organic cation of the formula (R5R6N=CH-NR7R8)+, characterized in that: R5, R6, R7 and R8 are independently selected from hydrogen, unsubstituted or substituted C1-C20 alkyl and unsubstituted or substituted aryl; B is a metal cation; X is the first halide anion; X' is a second halide anion different from the first halide anion; and z has a value greater than 0 and less than 1, and preferably z has a value from 0.05 to 0.95. 7. Fotonaponski uređaj prema bilo kojem patentnom zahtjevu od 1 do 5, naznačen time, što je perovskit odabran iz CH3NH3PbBrl2, CH3NH3PbBrCl2, CH3NH3PblBr2, CH3NH3PblCl2, CH3NH3PbClBr2, CH3NH3Pbl2Cl, CH3NH3SnBrI2, CH3NH3SnBrCl2, CH3NH3SnF2Br, CH3NH3SnIBr2, CH3NH3SnICl2, CH3NH3SnF2l, CH3NH3SnClBr2, CH3NH3Snl2Cl i CH3NH3SnF2Cl.7. Fotonaponski uređaj prema bilo kojem patentnom zahtjevu od 1 do 5, naznačen time, što je perovskit odabran iz CH3NH3PbBrl2, CH3NH3PbBrCl2, CH3NH3PblBr2, CH3NH3PblCl2, CH3NH3PbClBr2, CH3NH3Pbl2Cl, CH3NH3SnBrI2, CH3NH3SnBrCl2, CH3NH3SnF2Br, CH3NH3SnIBr2, CH3NH3SnICl2, CH3NH3SnF2l, CH3NH3SnClBr2, CH3NH3Snl2Cl i CH3NH3SnF2Cl. 8. Fotonaponski uređaj prema patentnom zahtjevu 6, naznačen time, što perovskit ima formulu (H2N=CH-NH2)Pbl3zBr3(1-z).8. Photovoltaic device according to claim 6, characterized in that the perovskite has the formula (H2N=CH-NH2)Pbl3zBr3(1-z). 9. Fotonaponski uređaj prema bilo kojem od prethodnih zahtjeva, koji je fotonaponski uređaj koji sadrži bilo što od sljedećeg: (i) prvu elektrodu, drugu elektrodu i, smješten između prve i druge elektrode: (a) predmetni perovskit; (ii) prvu elektrodu, drugu elektrodu i, smještene između prve i druge elektrode: (a) sloj tipa n i (b) predmetni perovskit; (iii) prvu elektrodu, drugu elektrodu i smještene između prve i druge elektrode: (a) sloj tipa p i (b) predmetni perovskit; (iv) prvu elektrodu, drugu elektrodu i, smještene između prve i druge elektrode: (a) sloj tipa n, (b) predmetni perovskit i (c) sloj tipa p.9. A photovoltaic device according to any of the preceding claims, which is a photovoltaic device comprising any of the following: (i) a first electrode, a second electrode, and, located between the first and second electrodes: (a) subject perovskite; (ii) a first electrode, a second electrode and, located between the first and second electrodes: (a) an n-type layer and (b) the subject perovskite; (iii) a first electrode, a second electrode, and located between the first and second electrodes: (a) a p-type layer and (b) the subject perovskite; (iv) a first electrode, a second electrode, and, located between the first and second electrodes: (a) an n-type layer, (b) the subject perovskite, and (c) a p-type layer. 10. Fotonaponski uređaj prema bilo kojem patentnom zahtjevu od 1 do 9, pri čemu fotonaponski uređaj sadrži: prvu elektrodu; drugu elektrodu i, smještene između prve i druge elektrode: (a) porozni sloj poluvodiča; i (b) senzibilizacijski materijal koji sadrži predmetni pervoskit; i opcionalno (c) materijal za transport naboja.10. Photovoltaic device according to any patent claim from 1 to 9, wherein the photovoltaic device contains: the first electrode; the second electrode and, located between the first and second electrodes: (a) porous semiconductor layer; and (b) sensitizing material containing the perovskite in question; and optional (c) charge transport material. 11. Fotonaponski uređaj prema bilo kojem patentnom zahtjevu od 1 do 10, pri čemu fotonaponski uređaj sadrži: prvu elektrodu; drugu elektrodu i, smještene između prve i druge elektrode: (a) porozni sloj poluvodiča, koji predstavlja porozni sloj poluvodiča tipa p; (b) senzibilizacijski materijal koji sadrži predmetni perovskit; i (c) materijal za transport naboja, koji predstavlja materijal za transport elektrona; opcionalno naznačeno time, što porozni sloj poluvodiča tipa p sadrži oksid nikla, vanadija, bakra ili molibdena; opcionalno naznačeno time, što je porozni sloj poluvodiča tipa p u kontaktu s kompaktnim slojem poluvodiča tipa p, a poželjno poluvodič tipa p sadrži oksid nikla, vanadija, bakra, molibdena ili volframa; i opcionalno naznačeno time, što materijal za transport naboja sadrži fuleren ili perilen ili njegove derivate ili P(NDI2OD-T2).11. Photovoltaic device according to any patent claim from 1 to 10, wherein the photovoltaic device contains: the first electrode; the second electrode and, located between the first and second electrodes: (a) porous semiconductor layer, representing a p-type semiconductor porous layer; (b) sensitizing material containing the subject perovskite; and (c) charge transport material, which is an electron transport material; optionally characterized by the fact that the porous p-type semiconductor layer contains nickel, vanadium, copper or molybdenum oxide; optionally indicated by the fact that the porous p-type semiconductor layer is in contact with the p-type semiconductor compact layer, and preferably the p-type semiconductor contains nickel, vanadium, copper, molybdenum or tungsten oxide; and optionally characterized by the fact that the charge transport material contains fullerene or perylene or its derivatives or P(NDI2OD-T2). 12. Fotonaponski uređaj prema bilo kojem patentnom zahtjevu od 1 do 10, pri čemu fotonaponski uređaj sadrži: prvu elektrodu; drugu elektrodu i, smještene između prve i druge elektrode: (a) porozni sloj poluvodiča, koji predstavlja porozni sloj poluvodiča tipa n; (b) senzibilizacijski materijal koji sadrži predmetni perovskit; i (c) materijal za transport naboja, koji predstavlja materijal za transport šupljina; opcionalno, naznačeno time, što porozni sloj poluvodiča tipa n sadrži: oksid titana, kositra, cinka, niobija, tantala, volframa, indija, galija, neodinija, paladija ili kadmija, a poželjno sadrži TiO2; i opcionalno, naznačeno time, što je porozni sloj poluvodiča u kontaktu s kompaktnim slojem poluvodiča tipa n, a poželjno kompaktni sloj poluvodiča tipa n sadrži TiO2.12. Photovoltaic device according to any patent claim from 1 to 10, wherein the photovoltaic device contains: the first electrode; the second electrode and, located between the first and second electrodes: (a) porous semiconductor layer, representing a porous n-type semiconductor layer; (b) sensitizing material containing the subject perovskite; and (c) charge transport material, which is a cavity transport material; optionally, indicated by the fact that the porous n-type semiconductor layer contains: oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodynium, palladium or cadmium, and preferably contains TiO2; and optionally, characterized by the fact that the porous semiconductor layer is in contact with the compact n-type semiconductor layer, and preferably the compact n-type semiconductor layer contains TiO2. 13. Fotonaponski uređaj prema patentnom zahtjevu 12, naznačen time, što je materijal za transport šupljina bilo što od sljedećeg: materijal za transport šupljina u čvrstom stanju ili tekući elektrolit; polimerni ili molekularni transporter šupljina, i opcionalno naznačen time, što je polimerni ili molekularni materijal za transport šupljina odabran iz spiro-OMeTAD, P3HT, PCPDTBT i PVK; molekularni transporter šupljina ili polimer ili kopolimeri; i anorganski transporter šupljina, i opcionalno naznačen time, što je anorganski transporter šupljina Cul, CuBR, CuSCN, Cu2O, CuO ili CIS.13. Photovoltaic device according to claim 12, characterized in that the cavity transport material is any of the following: solid state cavity transport material or liquid electrolyte; a polymeric or molecular cavity transporter, and optionally characterized in that the polymeric or molecular cavity transporter is selected from spiro-OMeTAD, P3HT, PCPDTBT and PVK; molecular cavity transporter or polymer or copolymers; and an inorganic cavity transporter, and optionally indicated that the inorganic cavity transporter is Cu, CuBR, CuSCN, Cu2O, CuO or CIS.
HRP20160559TT 2012-05-18 2016-05-24 Optoelectronic devices with organometal perovskites with mixed anions HRP20160559T4 (en)

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GBGB1208793.8A GB201208793D0 (en) 2012-05-18 2012-05-18 Optoelectronic device
EP13723943.0A EP2850626B2 (en) 2012-05-18 2013-05-20 Optoelectronic devices with organometal perovskites with mixed anions
PCT/GB2013/051306 WO2013171517A1 (en) 2012-05-18 2013-05-20 Optoelectronic devices with organometal perovskites with mixed anions

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HRP20160559T4 true HRP20160559T4 (en) 2020-07-10

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