HRP20140735T1 - Metalna pasta sa co-prekursorima - Google Patents

Metalna pasta sa co-prekursorima Download PDF

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Publication number
HRP20140735T1
HRP20140735T1 HRP20140735AT HRP20140735T HRP20140735T1 HR P20140735 T1 HRP20140735 T1 HR P20140735T1 HR P20140735A T HRP20140735A T HR P20140735AT HR P20140735 T HRP20140735 T HR P20140735T HR P20140735 T1 HRP20140735 T1 HR P20140735T1
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HR
Croatia
Prior art keywords
metal paste
formate
group
metal
salts
Prior art date
Application number
HRP20140735AT
Other languages
English (en)
Inventor
Michael Schäfer
Wolfgang Schmitt
Jian ZENG
Original Assignee
Heraeus Materials Technology Gmbh & Co. Kg
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Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43384183&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HRP20140735(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Heraeus Materials Technology Gmbh & Co. Kg filed Critical Heraeus Materials Technology Gmbh & Co. Kg
Publication of HRP20140735T1 publication Critical patent/HRP20140735T1/hr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/286—Al as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1003—Use of special medium during sintering, e.g. sintering aid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3618—Carboxylic acids or salts
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    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Claims (14)

1. Metalna pasta naznačena time, da sadrži: (A) 75-90 težinskih postotaka najmanje jednog metala, u obliku čestica, koje pokazuju zaštitno svojstvo prekrivanja (coating), koji sadrži najmanje jedan organski spoj; (B) 0,1-12 težinskih postotaka najmanje jednog metalnog precursora, (C) 6-20 težinskih postotaka najmanje jednog otapala; i (D) 0,1-15 težinskih postotaka najmanje jednog pomoćnog sredstva za spajanje kapanjem, koji je odabran iz skupine, koja se sastoji od: (i) Soli organskih kiselina, pri čemu organske kiseline sadrže 1-4 atoma ugljika; (ii) Estera organskih kiselina, pri čemu organske kiseline sadrže 1-4 atoma ugljika; i (iii) Karbonil kompleksa.
2. Metalna pasta prema zahtjevu 1, naznačena time, da su soli odabrane iz skupine, koja se sastoji od acetata, karbonata, formijata, laktata i oksalata.
3. Metalna pasta prema zahtjevu 2, naznačena time, da su soli odabrane iz skupine, koja se sastoji iz bakar(II)-acetata, željezo(II)-acetata i cin(II)-acetata.
4. Metalna pasta prema zahtjevu 2, naznačena time, da su soli odabrane iz skupine, koja se sastoji od željezo(II)-karbonata i bakar(II)-karbonata.
5. Metalna pasta prema zahtjevu 2, naznačena time, da su soli odabrane iz skupine, koja se sastoji iz magnezij formijata, aluminij formijata, željezo(II)-formijata, cin(II)-formijata, bakar(II)-formijata, srebro(II)-formijata i mangan(III)-formijata.
6. Metalna pasta prema zahtjevu 2, naznačena time, da su soli odabrane iz skupine, koja se sastoji iz bakar(II)-laktata i srebro(I)-laktata.
7. Metalna pasta prema zahtjevu 2, naznačen time, da je sol odabrana iz skupine, koja se sastoji od željezo(II)-oksalata, željezo(III)-oksalata i kobalt(II)-oksalata.
8. Metalna pasta prema zahtjevu 1, naznačena time, da su esteri odabrani iz grupe, koja se sastoji od metil formijata, etil formijata, propil formijata i butil formijata.
9. Metalna pasta prema zahtjevu 1, naznačena time, da su karbonil kompleksi odabrani iz skupine, koja se sastoji iz metal karbonila.
10. Metalna pasta prema zahtjevu 9, naznačena time, da je metal-karbonil, željezo-karbonil.
11. Metalna pasta prema zahtjevu 1, naznačena time, da je najmanje jedan organski spoj odabran iz skupine, koja se sastoji od slobodnih masnih kiselina, soli masnih kiselina i estera masnih kiselina, koje sadrže po 8-24 atoma ugljika.
12. Metalna pasta, prema jednom od zahtjeva 1-11, naznačena time, da se molarni odnos pomoćnog sredstva za spajanje kapanjem prema, u sredstvu za površinsku zaštitu (coating) sadržanim organskim spojevima, nalazi u području od 1:1 do 150:1.
13. Postupak za spajanje najmanje dva dijela, kod kojih (a) „Sendvič“ redoslijed već postoji, koji sadrži najmanje (a1) jedan element 1 (a2) jedan element 2 i (a3) metalnu pastu, koja se nalazi između elementa 1 i elementa 2 i (b) „Sendvič“ redoslijed spaja kapanjem; naznačen je time, da metalna pasta (A) sadrži 75-90 težinskih udjela metala, koji je u čestica, koje pokazuju sposobnost površinske zaštite, koja sadrži najmanje jedan organski spoj, (B) 0,1-12 težinskih udjela jednog metalnog precursora, (C) 6-20 težinskih udjela najmanje jednog otapala i (D) 0,1-15 težinskih udjela najmanje jednog pomoćnog sredstva za spajanje kapanjem, koji je odabran iz skupine, koja sadrži (i) Soli organskih kiselina, pri čemu organske kiseline sadrže 1-4 atoma ugljika; (ii) Estere organskih kiselina, pri čemu organske kiseline sadrže 1-4 atoma ugljika; i (iii) obuhvaća karbonil komplekse.
14. Postupak prema zahtjevu 13, naznačen time, da se spajanje postupkom kapanja odvija kod temperature manje od 200°C.
HRP20140735AT 2009-09-04 2014-07-30 Metalna pasta sa co-prekursorima HRP20140735T1 (hr)

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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010044326A1 (de) * 2010-09-03 2012-03-08 Heraeus Materials Technology Gmbh & Co. Kg Verwendung von aliphatischen Kohlenwasserstoffen und Paraffinen als Lösemittel in Silbersinterpasten
TWI509631B (zh) 2011-02-25 2015-11-21 Henkel IP & Holding GmbH 用於電子裝置之可燒結銀薄片黏著劑
DE102011079467A1 (de) 2011-07-20 2013-01-24 Behr Gmbh & Co. Kg Thermoelektrisches Modul, Verfahren zur Herstellung eines thermoelektrischen Moduls und Verwendung eines metallischen Glases oder eines gesinterten Werkstoffes
DE102011079660B4 (de) * 2011-07-22 2023-06-07 Robert Bosch Gmbh Schichtverbund aus einer Schichtanordnung und einer elektrischen oder elektronischen Komponente, eine Schaltungsanordnung diesen Schichtverbund enthaltend und Verfahren zu dessen Ausbildung
HUE028880T2 (en) * 2011-09-20 2017-01-30 Heraeus Deutschland Gmbh & Co Kg Paste and process for connecting electronic components with a carrier
DE102011083893A1 (de) * 2011-09-30 2013-04-04 Robert Bosch Gmbh Ausgangswerkstoff einer Sinterverbindung und Verfahren zur Herstellung der Sinterverbindung
DE102012206587A1 (de) 2012-04-20 2013-11-07 Technische Universität Berlin Lotmaterial, Verfahren zu dessen Herstellung und seine Verwendung zum drucklosen Fügen metallischer Substrate
US10000670B2 (en) 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
EP2792642B1 (de) * 2013-04-15 2018-02-21 Heraeus Deutschland GmbH & Co. KG Sinterpaste mit gecoateten Silberoxid auf schwer sinterbare edlen und unedlen Oberflächen
HUE042419T2 (hu) * 2013-05-03 2019-06-28 Heraeus Deutschland Gmbh & Co Kg Részben oxidált fém szemcséket tartalmazó javított szinter-paszta
DE102013208387A1 (de) * 2013-05-07 2014-11-13 Robert Bosch Gmbh Silber-Komposit-Sinterpasten für Niedertemperatur Sinterverbindungen
EP2980051B1 (de) * 2014-08-01 2019-03-13 Heraeus Deutschland GmbH & Co. KG Erzeugung einer Dekorschicht auf keramischen Oberflächen
DE102014115319A1 (de) * 2014-10-21 2016-04-21 Osram Opto Semiconductors Gmbh Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung
WO2016071005A1 (de) * 2014-11-03 2016-05-12 Heraeus Deutschland GmbH & Co. KG Metallsinterzubereitung und deren verwendung zum verbinden von bauelementen
DE102015102759A1 (de) * 2015-02-26 2016-09-01 Heraeus Deutschland GmbH & Co. KG Leistungselektronik-Modul und Verfahren zur Herstellung eines Leistungselektronik-Moduls
KR102360536B1 (ko) * 2015-03-06 2022-02-08 엔테그리스, 아이엔씨. 고체 공급원 전달을 위한 고-순도 텅스텐 헥사카보닐
CN107709418B (zh) 2015-05-08 2021-04-27 汉高知识产权控股有限责任公司 可烧结的膜和膏及其使用方法
FR3038534A1 (fr) * 2015-07-10 2017-01-13 Commissariat Energie Atomique Assemblage d'un element avec un substrat isole electriquement et a faible resistance thermique notamment pour des applications haute temperature, ensemble comprenant ledit assemblage et un drain thermique et procede de fabrication
EP3401039A1 (de) 2017-05-12 2018-11-14 Heraeus Deutschland GmbH & Co. KG Verfahren zum verbinden von bauelementen mittels metallpaste
EP3622554A1 (de) 2017-05-12 2020-03-18 Heraeus Deutschland GmbH & Co. KG Verfahren zum verbinden von bauelementen mittels metallpaste
TWI784320B (zh) * 2019-09-24 2022-11-21 美商阿爾發金屬化工公司 燒結組成物、其製造和使用方法及其用途
KR102282622B1 (ko) * 2019-10-31 2021-07-28 한국재료연구원 코팅된 마그네슘 분말 및 그 제조방법
DE102019217166A1 (de) * 2019-11-07 2021-05-12 Robert Bosch Gmbh Leistungsmodul-Package
CN112759952A (zh) * 2020-12-25 2021-05-07 浙江苏生元福珠宝有限公司 油性烧结银浆料及其制备方法
KR20240090575A (ko) 2021-10-21 2024-06-21 나노-조인 게엠베하 유기 은 전구체와 응집된 은 나노입자의 입자를 포함하는 소결용 조성물
EP4249148A1 (en) 2022-03-21 2023-09-27 Nano-Join GmbH Composition for sintering comprising an organic silver precursor and particles of agglomerated silver nanoparticles
WO2023224555A2 (en) * 2022-05-17 2023-11-23 National University Of Singapore A composition and a composite material

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10183208A (ja) * 1996-12-25 1998-07-14 Sumitomo Metal Mining Co Ltd 銀粉末の製造方法
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
DE19842276A1 (de) * 1998-09-16 2000-03-30 Bosch Gmbh Robert Paste zum Verschweißen von Keramiken mit Metallen und Verfahren zur Herstellung einer Schweißverbindung
US6743395B2 (en) * 2000-03-22 2004-06-01 Ebara Corporation Composite metallic ultrafine particles and process for producing the same
US6951666B2 (en) * 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
CN100337782C (zh) * 2002-09-18 2007-09-19 株式会社荏原制作所 接合材料
JP2004178919A (ja) * 2002-11-26 2004-06-24 Bando Chem Ind Ltd 金属コロイド液及びそれより形成した導電性被膜
JP2005175321A (ja) * 2003-12-12 2005-06-30 Hitachi Ltd エッチングレジスト前駆体組成物及びそれを用いた配線基板の製造方法、並びに配線基板
KR20070033329A (ko) * 2004-02-18 2007-03-26 버지니아 테크 인터렉추얼 프라퍼티스, 인크. 인터커넥트를 위한 나노 크기의 금속 페이스트 및 이의사용 방법
US7771625B2 (en) * 2004-11-29 2010-08-10 Dainippon Ink And Chemicals, Inc. Method for producing surface-treated silver-containing powder and silver paste using surface-treated silver-containing powder
US7691294B2 (en) * 2005-03-04 2010-04-06 Inktec Co., Ltd. Conductive inks and manufacturing method thereof
KR101046197B1 (ko) * 2005-09-21 2011-07-04 니혼한다가부시끼가이샤 페이스트형 은입자 조성물, 고형상 은의 제조 방법, 고형상은, 접합 방법 및 인쇄 배선판의 제조 방법
JP4505825B2 (ja) * 2006-09-15 2010-07-21 国立大学法人大阪大学 金属ナノ粒子の焼結方法およびその焼結方法を用いた基板上に配線を形成する方法
JP5151150B2 (ja) * 2006-12-28 2013-02-27 株式会社日立製作所 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法
KR101107397B1 (ko) * 2007-07-31 2012-01-19 반도 카가쿠 가부시키가이샤 도전성 잉크 및 이를 사용하여 이루어진 도전성 피막, 도전성 잉크 및 도전성 피막의 제조 방법
DE102007046901A1 (de) * 2007-09-28 2009-04-09 W.C. Heraeus Gmbh Verfahren und Paste zur Kontaktierung von Metallflächen
DK2042260T3 (en) * 2007-09-28 2014-03-17 Heraeus Materials Tech Gmbh METHOD AND FIT FOR ESTABLISHING CONTACT BETWEEN METAL SURFACES
US8513534B2 (en) * 2008-03-31 2013-08-20 Hitachi, Ltd. Semiconductor device and bonding material
DE102008039828A1 (de) * 2008-08-27 2010-03-04 W.C. Heraeus Gmbh Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess
JP5246096B2 (ja) * 2009-08-10 2013-07-24 日立電線株式会社 複合金属微粒子材料、金属膜及び金属膜の製造方法、並びにプリント配線板及び電線ケーブル

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CN102791421B (zh) 2015-07-22
WO2011026624A1 (de) 2011-03-10
KR101697389B1 (ko) 2017-01-17
EP2396139B2 (de) 2017-08-02
KR20120068015A (ko) 2012-06-26
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