HK72084A - A schottky barrier semiconductor device and method of making same - Google Patents

A schottky barrier semiconductor device and method of making same

Info

Publication number
HK72084A
HK72084A HK720/84A HK72084A HK72084A HK 72084 A HK72084 A HK 72084A HK 720/84 A HK720/84 A HK 720/84A HK 72084 A HK72084 A HK 72084A HK 72084 A HK72084 A HK 72084A
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
schottky barrier
making same
barrier semiconductor
making
Prior art date
Application number
HK720/84A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/710,186 external-priority patent/US4142195A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of HK72084A publication Critical patent/HK72084A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Electrodes Of Semiconductors (AREA)
HK720/84A 1976-03-22 1984-09-20 A schottky barrier semiconductor device and method of making same HK72084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66890876A 1976-03-22 1976-03-22
US05/710,186 US4142195A (en) 1976-03-22 1976-07-30 Schottky barrier semiconductor device and method of making same

Publications (1)

Publication Number Publication Date
HK72084A true HK72084A (en) 1984-09-28

Family

ID=27100017

Family Applications (1)

Application Number Title Priority Date Filing Date
HK720/84A HK72084A (en) 1976-03-22 1984-09-20 A schottky barrier semiconductor device and method of making same

Country Status (6)

Country Link
JP (1) JPS52122471A (enrdf_load_stackoverflow)
CA (1) CA1078078A (enrdf_load_stackoverflow)
DE (1) DE2711365A1 (enrdf_load_stackoverflow)
FR (1) FR2345810A1 (enrdf_load_stackoverflow)
GB (1) GB1572846A (enrdf_load_stackoverflow)
HK (1) HK72084A (enrdf_load_stackoverflow)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
US4334120A (en) * 1979-03-20 1982-06-08 Sanyo Electric Co., Ltd. Sunlight-into-energy conversion apparatus
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
FR2463508A1 (fr) * 1979-08-16 1981-02-20 Anvar Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene
DE2946108C2 (de) * 1979-11-15 1985-02-14 Koch & Sterzel Gmbh & Co, 4300 Essen Strahlendetektor
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors
JPS604273A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 光電変換部材
JPS604274A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 光電変換部材
JPS6088955A (ja) * 1983-10-21 1985-05-18 Stanley Electric Co Ltd プラズマｃｖｄ装置
JPS62142374A (ja) * 1986-11-29 1987-06-25 Shunpei Yamazaki 光電変換半導体装置作製方法
JP2704569B2 (ja) * 1991-06-28 1998-01-26 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Also Published As

Publication number Publication date
GB1572846A (en) 1980-08-06
JPS616556B2 (enrdf_load_stackoverflow) 1986-02-27
FR2345810A1 (fr) 1977-10-21
DE2711365A1 (de) 1977-09-29
CA1078078A (en) 1980-05-20
FR2345810B1 (enrdf_load_stackoverflow) 1982-04-09
JPS52122471A (en) 1977-10-14
DE2711365C2 (enrdf_load_stackoverflow) 1988-09-01

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