HK69493A - Process for fabricating a semiconductor integrated circuit device having misfets - Google Patents

Process for fabricating a semiconductor integrated circuit device having misfets

Info

Publication number
HK69493A
HK69493A HK694/93A HK69493A HK69493A HK 69493 A HK69493 A HK 69493A HK 694/93 A HK694/93 A HK 694/93A HK 69493 A HK69493 A HK 69493A HK 69493 A HK69493 A HK 69493A
Authority
HK
Hong Kong
Prior art keywords
misfets
fabricating
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
HK694/93A
Other languages
English (en)
Inventor
Shuji Ikeda
Atsuyoshi Koike
Satoshi Meguro
Kousuke Okuyama
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK69493A publication Critical patent/HK69493A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
HK694/93A 1984-12-03 1993-07-15 Process for fabricating a semiconductor integrated circuit device having misfets HK69493A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59254010A JPS61133656A (ja) 1984-12-03 1984-12-03 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
HK69493A true HK69493A (en) 1993-07-23

Family

ID=17259003

Family Applications (1)

Application Number Title Priority Date Filing Date
HK694/93A HK69493A (en) 1984-12-03 1993-07-15 Process for fabricating a semiconductor integrated circuit device having misfets

Country Status (7)

Country Link
EP (1) EP0187260B1 (xx)
JP (1) JPS61133656A (xx)
KR (1) KR940000521B1 (xx)
CN (1) CN1004777B (xx)
DE (1) DE3583668D1 (xx)
HK (1) HK69493A (xx)
SG (1) SG43193G (xx)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263137A (ja) * 1985-05-07 1986-11-21 Hitachi Ltd 半導体装置
EP0228815B2 (en) * 1985-12-04 1997-10-15 Advanced Micro Devices, Inc. Field effect transistors
JPS6473676A (en) * 1987-09-16 1989-03-17 Hitachi Ltd Semiconductor integrated circuit device
IT1223571B (it) * 1987-12-21 1990-09-19 Sgs Thomson Microelectronics Procedimento per la fabbricazione di dispositivi integrati cmos con lunghezze di porta ridotte
NL8802219A (nl) * 1988-09-09 1990-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumlichaam waarin door ionenimplantaties halfgeleidergebieden worden gevormd.
JP2849923B2 (ja) * 1989-06-05 1999-01-27 猛英 白土 半導体装置
JPH03232231A (ja) * 1990-02-08 1991-10-16 Toshiba Corp 半導体装置
US6656797B2 (en) * 2001-12-31 2003-12-02 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation
CN101312187B (zh) * 2007-05-21 2011-07-13 中芯国际集成电路制造(上海)有限公司 半导体器件逻辑电路
CN101312193B (zh) * 2007-05-21 2011-07-13 中芯国际集成电路制造(上海)有限公司 半导体器件逻辑电路
JP5623898B2 (ja) * 2010-12-21 2014-11-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN104701356B (zh) * 2013-12-06 2018-01-12 无锡华润上华科技有限公司 半导体器件及其制备方法
TWI731700B (zh) * 2020-05-27 2021-06-21 新唐科技股份有限公司 具有埋層結構的高壓半導體裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device
JPS5736856A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Manufacture of complementary type insulated gate field effect semiconductor device
JPS57107067A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Manufacture of semiconductor device
JPS5972759A (ja) * 1982-10-20 1984-04-24 Toshiba Corp 半導体装置の製造方法
EP0113540A3 (en) * 1982-12-10 1985-06-05 Western Electric Company, Incorporated Improvements in or relating to semiconductor devices, and methods of making same
JPS6046804B2 (ja) * 1983-04-22 1985-10-18 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
KR860005450A (ko) 1986-07-23
EP0187260A2 (en) 1986-07-16
CN85108671A (zh) 1986-06-10
KR940000521B1 (ko) 1994-01-21
EP0187260A3 (en) 1987-01-07
CN1004777B (zh) 1989-07-12
DE3583668D1 (de) 1991-09-05
EP0187260B1 (en) 1991-07-31
JPS61133656A (ja) 1986-06-20
SG43193G (en) 1993-06-25

Similar Documents

Publication Publication Date Title
GB2163901B (en) A semiconductor integrated circuit device and a process for manufacturing such a device
SG102592G (en) Process for producing a semiconductor integrated circuit device including a misfet
GB2156616B (en) A semiconductor integrated circuit
DE3379621D1 (en) Semiconductor integrated circuit device and a method for manufacturing the same
HK84188A (en) Process of fabricating a semiconductor integrated circuit device
DE3571535D1 (en) Integrated circuit semiconductor device formed on a wafer
EP0169574A3 (en) Apparatus for manufacturing semiconductor device
GB2135148B (en) A semiconductor integrated circuit
HK44686A (en) Semiconductor integrated circuit devices and a process for producing the same
EP0166167A3 (en) Semiconductor device comprising misfets and a process for manufacturing the same
HK22289A (en) A semiconductor integrated circuit device
HK40490A (en) A semiconductor integrated circuit device
HK40090A (en) A semiconductor integrated circuit device
HK41690A (en) Process for producing a semiconductor device
HK69493A (en) Process for fabricating a semiconductor integrated circuit device having misfets
DE3063191D1 (en) Method for manufacturing a semiconductor integrated circuit
DE3464670D1 (en) A method for manufacturing a semiconductor device
DE3565441D1 (en) Method for manufacturing a semiconductor device
DE3377438D1 (en) Resin-molded semiconductor devices and a process for manufacturing the same
SG77388G (en) Process for manufacturing a semiconductor integrated circuit device
DE3165345D1 (en) Method for manufacturing a semiconductor integrated circuit device
EP0143670A3 (en) Process for fabricating a semiconductor device
SG82590G (en) A semiconductor integrated circuit device
SG82990G (en) A semiconductor integrated circuit
JPS57165080A (en) Device for manufacturing semiconductor integrated circuit

Legal Events

Date Code Title Description
NR Patent deemed never to have been added to the register under section 13(7) of patents (transitional arrangements) rules