HK3593A - Low temperature glass composition,paste and method of use - Google Patents

Low temperature glass composition,paste and method of use

Info

Publication number
HK3593A
HK3593A HK35/93A HK3593A HK3593A HK 3593 A HK3593 A HK 3593A HK 35/93 A HK35/93 A HK 35/93A HK 3593 A HK3593 A HK 3593A HK 3593 A HK3593 A HK 3593A
Authority
HK
Hong Kong
Prior art keywords
glass composition
paste
low temperature
temperature glass
tl2o3
Prior art date
Application number
HK35/93A
Other languages
English (en)
Inventor
Raymond L Dietz
Original Assignee
Diemat Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diemat Inc filed Critical Diemat Inc
Publication of HK3593A publication Critical patent/HK3593A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C03C3/21—Silica-free oxide glass compositions containing phosphorus containing titanium, zirconium, vanadium, tungsten or molybdenum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/29299—Base material
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    • H01L2224/29339—Silver [Ag] as principal constituent
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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    • H01L2224/8389—Bonding techniques using an inorganic non metallic glass type adhesive, e.g. solder glass
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    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
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    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)
  • Die Bonding (AREA)
HK35/93A 1989-06-21 1993-01-21 Low temperature glass composition,paste and method of use HK3593A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/369,105 US4933030A (en) 1989-06-21 1989-06-21 Low temperature glass composition, paste and method of use

Publications (1)

Publication Number Publication Date
HK3593A true HK3593A (en) 1993-01-29

Family

ID=23454113

Family Applications (1)

Application Number Title Priority Date Filing Date
HK35/93A HK3593A (en) 1989-06-21 1993-01-21 Low temperature glass composition,paste and method of use

Country Status (7)

Country Link
US (1) US4933030A (ko)
EP (1) EP0404564A1 (ko)
KR (1) KR930006319B1 (ko)
CA (1) CA2019413A1 (ko)
GB (1) GB2235446B (ko)
HK (1) HK3593A (ko)
SG (1) SG110192G (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164119A (en) * 1988-09-23 1992-11-17 Johnson Matthey Inc. Silver-glass pastes
US5374699A (en) * 1989-09-29 1994-12-20 Dainipponink And Chemicals, Inc. Thermosetting resin composition
US5183784A (en) * 1990-02-21 1993-02-02 Johnson Matthey Inc. Silver-glass pastes
DE4128804A1 (de) * 1991-08-30 1993-03-04 Demetron Bleifreies, niedrigschmelzendes glas
US5240884A (en) * 1991-09-05 1993-08-31 Johnson Matthey, Inc. Silver-glass die attach paste
WO1993018456A1 (en) * 1992-03-13 1993-09-16 Emc Corporation Multiple controller sharing in a redundant storage array
US5663109A (en) * 1992-10-19 1997-09-02 Quantum Materials, Inc. Low temperature glass paste with high metal to glass ratio
US5334558A (en) * 1992-10-19 1994-08-02 Diemat, Inc. Low temperature glass with improved thermal stress properties and method of use
US5336644A (en) * 1993-07-09 1994-08-09 Johnson Matthey Inc. Sealing glass compositions
US5391604A (en) * 1993-07-30 1995-02-21 Diemat, Inc. Adhesive paste containing polymeric resin
US6111005A (en) * 1993-07-30 2000-08-29 Diemat, Inc. Polymeric adhesive paste
US6140402A (en) * 1993-07-30 2000-10-31 Diemat, Inc. Polymeric adhesive paste
US6265471B1 (en) 1997-03-03 2001-07-24 Diemat, Inc. High thermally conductive polymeric adhesive
US6165613A (en) * 1999-03-09 2000-12-26 National Starch And Chemical Investment Holding Corporation Adhesive paste for semiconductors
JP2001351929A (ja) * 2000-06-09 2001-12-21 Hitachi Ltd 半導体装置およびその製造方法
JP2005502905A (ja) * 2001-09-07 2005-01-27 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ガラス接合ファイバアレイおよびその製造方法
JP3915586B2 (ja) * 2002-04-24 2007-05-16 株式会社デンソー 力学量検出装置の製造方法
WO2007094123A1 (ja) * 2006-02-14 2007-08-23 Murata Manufacturing Co., Ltd. 多層セラミック電子部品、多層セラミック基板、および多層セラミック電子部品の製造方法
US7422707B2 (en) * 2007-01-10 2008-09-09 National Starch And Chemical Investment Holding Corporation Highly conductive composition for wafer coating
US8795837B2 (en) * 2007-08-20 2014-08-05 Diemat, Inc. Adhesives with thermal conductivity enhanced by mixed silver fillers
TWI652694B (zh) 2014-01-17 2019-03-01 日商納美仕有限公司 導電性糊及使用該導電性糊製造半導體裝置之方法
EP3387653A4 (en) * 2015-12-10 2019-07-17 Sun Chemical Corporation SILVER CONDUCTIVE PASTE COMPOSITION

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2385580A (en) * 1944-07-01 1945-09-25 Du Pont Vitrifiable flux and bonding composition containing same
US3088833A (en) * 1960-06-06 1963-05-07 Owens Illinois Glass Co Sealing glass
US3454408A (en) * 1964-05-28 1969-07-08 Owens Illinois Inc Solder glass compositions and method of sealing metal therewith
US3408212A (en) * 1965-06-04 1968-10-29 Fairchild Camera Instr Co Low melting oxide glass
US3480566A (en) * 1965-10-22 1969-11-25 Du Pont Low melting glass and compositions containing the same
US3497774A (en) * 1967-06-07 1970-02-24 Beckman Instruments Inc Electrical circuit module and method of manufacture
US3650778A (en) * 1969-10-29 1972-03-21 Fairchild Camera Instr Co Low-expansion, low-melting zinc phosphovanadate glass compositions
US3787218A (en) * 1970-10-27 1974-01-22 Owens Illinois Inc Zircon containing printing paste for overglaze coating of microelectronic circuits on ceramic substrates
US3703386A (en) * 1970-10-27 1972-11-21 Owens Illinois Inc Nonflow solder-stop glasses comprising lead-zinc borate and ceramic
US3837866A (en) * 1972-04-24 1974-09-24 Corning Glass Works Low melting vanadate glasses
JPS5130564B2 (ko) * 1972-10-09 1976-09-01
US4002799A (en) * 1973-11-23 1977-01-11 Technology Glass Corporation Glass sealed products
GB1552648A (en) * 1976-08-17 1979-09-19 Standard Telephones Cables Ltd Low melting point glass
US4401767A (en) * 1981-08-03 1983-08-30 Johnson Matthey Inc. Silver-filled glass
GB2104058A (en) * 1981-08-03 1983-03-02 Avx Corp Silver-filled glass metallizing paste
US4459166A (en) * 1982-03-08 1984-07-10 Johnson Matthey Inc. Method of bonding an electronic device to a ceramic substrate
JPS6136135A (ja) * 1984-07-27 1986-02-20 Hitachi Ltd 磁気ヘツド用充填ガラス
JPS61111935A (ja) * 1984-11-02 1986-05-30 Hitachi Ltd ガラス組成物
US4743302A (en) * 1986-06-06 1988-05-10 Vlsi Packaging Materials, Inc. Low melting glass composition
EP0258408B1 (en) * 1986-02-19 1991-09-18 Vlsi Packaging Materials, Inc. A low melting glass composition containing pbo and v 2?o 5?
US4761224A (en) * 1986-03-10 1988-08-02 Quantum Materials Inc. Silver-glass paste with poly-modal flake size distribution and quick dry vehicle
DK54988A (da) * 1987-11-25 1989-05-26 Du Pont Materiale til binding af integrerede kredsloeb til uorganiske, dielektriske underlag

Also Published As

Publication number Publication date
KR930006319B1 (ko) 1993-07-14
GB2235446B (en) 1992-09-23
US4933030A (en) 1990-06-12
CA2019413A1 (en) 1990-12-21
SG110192G (en) 1992-12-24
GB9013824D0 (en) 1990-08-15
KR910000554A (ko) 1991-01-29
EP0404564A1 (en) 1990-12-27
GB2235446A (en) 1991-03-06

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