HK288A - Method and apparatus for the heat-treatment of a plate-like member - Google Patents

Method and apparatus for the heat-treatment of a plate-like member

Info

Publication number
HK288A
HK288A HK2/88A HK288A HK288A HK 288 A HK288 A HK 288A HK 2/88 A HK2/88 A HK 2/88A HK 288 A HK288 A HK 288A HK 288 A HK288 A HK 288A
Authority
HK
Hong Kong
Prior art keywords
treatment
heat
plate
Prior art date
Application number
HK2/88A
Other languages
English (en)
Inventor
Haruo Amada
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK288A publication Critical patent/HK288A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Clinical Laboratory Science (AREA)
  • Electromagnetism (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
HK2/88A 1983-02-21 1988-01-07 Method and apparatus for the heat-treatment of a plate-like member HK288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026178A JPH0669027B2 (ja) 1983-02-21 1983-02-21 半導体ウエハの薄膜形成方法

Publications (1)

Publication Number Publication Date
HK288A true HK288A (en) 1988-01-15

Family

ID=12186270

Family Applications (1)

Application Number Title Priority Date Filing Date
HK2/88A HK288A (en) 1983-02-21 1988-01-07 Method and apparatus for the heat-treatment of a plate-like member

Country Status (9)

Country Link
US (2) US4593168A (it)
JP (1) JPH0669027B2 (it)
KR (1) KR840008086A (it)
DE (1) DE3402630A1 (it)
FR (1) FR2541510B1 (it)
GB (1) GB2136258B (it)
HK (1) HK288A (it)
IT (1) IT1173301B (it)
SG (1) SG87887G (it)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
DE3330910A1 (de) * 1983-08-27 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum herstellen eines reaktionsgefaesses fuer kristallzuchtzwecke
FR2572176B1 (fr) * 1984-10-19 1987-02-20 Inst Textile De France Procede et dispositif de mesure par radiometrie micro-onde de la temperature d'un materiau plan en defilement, notamment textile
US4677758A (en) * 1985-10-08 1987-07-07 Seiichiro Aigo Spin drier for semiconductor material
DE3608783A1 (de) * 1986-03-15 1987-09-17 Telefunken Electronic Gmbh Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
JPS63293167A (ja) * 1987-05-26 1988-11-30 Canon Inc マイクロ波プラズマｃｖｄ法による機能性堆積膜形成法
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material
ES2163388T3 (es) * 1988-05-24 2002-02-01 Unaxis Balzers Ag Instalacion de vacio.
US4851630A (en) * 1988-06-23 1989-07-25 Applied Science & Technology, Inc. Microwave reactive gas generator
JP2776859B2 (ja) * 1989-01-11 1998-07-16 株式会社日立製作所 薄膜形成方法
US5126533A (en) * 1990-03-19 1992-06-30 Conductus, Inc. Substrate heater utilizing protective heat sinking means
US5837978A (en) * 1990-07-11 1998-11-17 International Business Machines Corporation Radiation control system
JP2728766B2 (ja) * 1990-07-18 1998-03-18 株式会社東芝 半導体の処理方法およびその装置
US5064979A (en) * 1990-08-07 1991-11-12 W. R. Grace & Co.-Conn. Microwave air float bar for drying a traveling web
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
FR2670950B1 (fr) * 1990-12-20 1993-04-16 Motorola Semiconducteurs Procede et appareil pour le traitement de recuit des dispositifs a semiconducteur.
US5296271A (en) * 1991-06-13 1994-03-22 Motorola, Inc. Microwave treatment of photoresist on a substrate
US5284805A (en) * 1991-07-11 1994-02-08 Sematech, Inc. Rapid-switching rotating disk reactor
US5519193A (en) * 1992-10-27 1996-05-21 International Business Machines Corporation Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5395794A (en) * 1993-04-22 1995-03-07 Sklyarevich; Vladislav E. Method of treating semiconductor materials
US5669316A (en) * 1993-12-10 1997-09-23 Sony Corporation Turntable for rotating a wafer carrier
RU95106478A (ru) * 1994-04-29 1997-01-20 Моторола Устройство и способ для разложения химических соединений
US5663476A (en) * 1994-04-29 1997-09-02 Motorola, Inc. Apparatus and method for decomposition of chemical compounds by increasing residence time of a chemical compound in a reaction chamber
US5811631A (en) * 1994-04-29 1998-09-22 Motorola, Inc. Apparatus and method for decomposition of chemical compounds using a self-supporting member
JPH08186081A (ja) 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US6078035A (en) * 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
JP3297591B2 (ja) * 1996-04-17 2002-07-02 シャープ株式会社 アクティブマトリクス基板の製造方法並びに液晶表示装置
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
JP3315414B2 (ja) * 1997-04-10 2002-08-19 ニューコン システムズ、インコーポレイション マイクロ波による厚壁セラミック部品の接合方法と接合装置
TW373063B (en) * 1997-08-04 1999-11-01 Matsushita Electric Ind Co Ltd Method of heat treating object and apparatus for the same
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
KR100481039B1 (ko) 1997-12-31 2005-05-16 삼성전자주식회사 마이크로웨이브를사용한박막형성장치및그방법
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6322116B1 (en) 1999-07-23 2001-11-27 Asm America, Inc. Non-contact end effector
TW449931B (en) * 2000-01-27 2001-08-11 United Epitaxy Co Ltd Manufacturing method of P-type semiconductor with a low resistance coefficient
DE50004935D1 (de) * 2000-10-31 2004-02-05 Sez Ag Villach Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US6749764B1 (en) * 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP2003297901A (ja) * 2002-04-05 2003-10-17 Supurauto:Kk 基板処理システムおよびその処理方法
WO2004044558A2 (en) * 2002-11-14 2004-05-27 Foss Analytical A/S A method and apparatus for determining a property of a sample
EP1570107B1 (en) * 2002-12-10 2010-08-04 E.T.C. Epitaxial Technology Center SRL Susceptor system
WO2004053188A1 (en) * 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Susceptor system
US7039836B2 (en) * 2003-04-01 2006-05-02 Hewlett-Packard Development Company, L.P. High performance computer system having a firmware error queue and automatic error handling
US20040224508A1 (en) * 2003-05-06 2004-11-11 Applied Materials Israel Ltd Apparatus and method for cleaning a substrate using a homogenized and non-polarized radiation beam
US7070661B2 (en) * 2003-08-22 2006-07-04 Axcelis Technologies, Inc. Uniform gas cushion wafer support
US20050123692A1 (en) * 2003-12-04 2005-06-09 Tangidyne Corporation Method and apparatus for carrying out chemical vapor deposition
US6997989B2 (en) * 2003-12-08 2006-02-14 Boston Scientific Scimed, Inc. Medical implant processing chamber
JP4923189B2 (ja) * 2004-06-09 2012-04-25 イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル 支持システム
US7576835B2 (en) * 2005-07-06 2009-08-18 Asml Netherlands B.V. Substrate handler, lithographic apparatus and device manufacturing method
US9048270B2 (en) * 2007-03-08 2015-06-02 Joseph M. Wander Apparatus and method for heating semiconductor wafers via microwaves
US20100077615A1 (en) * 2008-09-26 2010-04-01 Foxconn Technology Co., Ltd. Method for manufacturing a plate-type heat pipe
EP2950329B1 (en) 2012-11-30 2022-01-05 Nikon Corporation Carrier system, exposure apparatus, and device manufacturing method
JP5685615B2 (ja) * 2013-03-25 2015-03-18 東京エレクトロン株式会社 マイクロ波加熱処理方法
JP6188145B2 (ja) * 2013-09-27 2017-08-30 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US10727374B2 (en) 2015-09-04 2020-07-28 Seoul Semiconductor Co., Ltd. Transparent conductive structure and formation thereof
US10981800B2 (en) * 2016-04-14 2021-04-20 Seoul Semiconductor Co., Ltd. Chamber enclosure and/or wafer holder for synthesis of zinc oxide
US10981801B2 (en) 2016-04-14 2021-04-20 Seoul Semiconductor Co., Ltd. Fluid handling system for synthesis of zinc oxide
TWI810772B (zh) * 2021-12-30 2023-08-01 日揚科技股份有限公司 一種快速退火設備

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639014A1 (de) * 1968-02-15 1971-04-01 Halbleiterwerk Frankfurt Oder Verfahren zum Kontaktieren von Halbleiteranordnungen
US3521018A (en) * 1968-09-26 1970-07-21 Ibm Temperature sensor
US3699298A (en) * 1971-12-23 1972-10-17 Western Electric Co Methods and apparatus for heating and/or coating articles
JPS5214370A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Baking device
US4013485A (en) * 1976-04-29 1977-03-22 International Business Machines Corporation Process for eliminating undesirable charge centers in MIS devices
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
JPS5469384A (en) * 1977-11-14 1979-06-04 Matsushita Electric Ind Co Ltd Electric furnace unit
US4245143A (en) * 1978-04-28 1981-01-13 Hitachi Heating Appliances Co., Ltd. Microwave oven
JPS54142638A (en) * 1978-04-28 1979-11-07 Hitachi Heating Appliance Co Ltd High frequency heating device
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
JPS5546310A (en) * 1978-09-27 1980-04-01 Hitachi Ltd Method of controlling temperature in furnace
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
US4254319A (en) * 1979-06-25 1981-03-03 Bruce Beh Portable microwave oven-turntable device
US4281031A (en) * 1979-07-25 1981-07-28 Machine Technology, Inc. Method and apparatus for processing workpieces
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
DE3027934A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur einseitigen aetzung von halbleiterscheiben
JPS5824431A (ja) * 1981-08-06 1983-02-14 Sumitomo Rubber Ind Ltd エラストマ−物品の予熱方法
GB2106709B (en) * 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法

Also Published As

Publication number Publication date
SG87887G (en) 1988-05-20
JPH0669027B2 (ja) 1994-08-31
FR2541510A1 (fr) 1984-08-24
US4593168A (en) 1986-06-03
IT8419694A0 (it) 1984-02-17
US4667076A (en) 1987-05-19
GB8401816D0 (en) 1984-02-29
IT1173301B (it) 1987-06-24
KR840008086A (ko) 1984-12-12
DE3402630A1 (de) 1984-08-23
JPS59152618A (ja) 1984-08-31
FR2541510B1 (fr) 1986-09-19
GB2136258B (en) 1986-12-31
GB2136258A (en) 1984-09-12

Similar Documents

Publication Publication Date Title
GB2136258B (en) Method and apparatus for the heat-treatment of a plate-like member
DE3473776D1 (en) Etching method and apparatus
GB2140942B (en) Sequence control method and apparatus
DE3473648D1 (en) Weighing apparatus and method
GB2138548B (en) Well completion method and apparatus
JPS56146876A (en) Adhering method and apparatus
EP0119075A3 (en) Faulty-memory processing method and apparatus
DE3479683D1 (en) Span adjusting method and apparatus
EP0140426A3 (en) Method and apparatus for hole coldworking
PT75426B (en) Method and filter-thickening apparatus
GB2119592B (en) Pulse-counting method and apparatus
GB2139917B (en) Efg process and apparatus
GB2131001B (en) Currency-dispensing method and apparatus
AU3556684A (en) Surface-fill method and apparatus
EP0146898A3 (en) Yarn-threading method and device
GB8307963D0 (en) Method and apparatus
DE3477997D1 (en) Coating method and apparatus
GB2129356B (en) Billet-shearing method and apparatus
DE3472390D1 (en) Transfer apparatus and method
DE3465935D1 (en) Printing method and apparatus
DE3480533D1 (en) Method and device for electroerosion-polishing
GB2175112B (en) Sequence control method and apparatus
GB2142854B (en) Draw-bending apparatus and method
GB2169813B (en) Compost-making apparatus and method
PT78050A (en) Apparatus and process for crosswinding

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)