FR2541510B1 - Procede et appareil pour le traitement thermique d'un article du type en forme de plaque, notamment d'une pastille semiconductrice - Google Patents

Procede et appareil pour le traitement thermique d'un article du type en forme de plaque, notamment d'une pastille semiconductrice

Info

Publication number
FR2541510B1
FR2541510B1 FR8401270A FR8401270A FR2541510B1 FR 2541510 B1 FR2541510 B1 FR 2541510B1 FR 8401270 A FR8401270 A FR 8401270A FR 8401270 A FR8401270 A FR 8401270A FR 2541510 B1 FR2541510 B1 FR 2541510B1
Authority
FR
France
Prior art keywords
article
plate
heat treatment
semiconductor pellet
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8401270A
Other languages
English (en)
Other versions
FR2541510A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2541510A1 publication Critical patent/FR2541510A1/fr
Application granted granted Critical
Publication of FR2541510B1 publication Critical patent/FR2541510B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Clinical Laboratory Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
FR8401270A 1983-02-21 1984-01-27 Procede et appareil pour le traitement thermique d'un article du type en forme de plaque, notamment d'une pastille semiconductrice Expired FR2541510B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026178A JPH0669027B2 (ja) 1983-02-21 1983-02-21 半導体ウエハの薄膜形成方法

Publications (2)

Publication Number Publication Date
FR2541510A1 FR2541510A1 (fr) 1984-08-24
FR2541510B1 true FR2541510B1 (fr) 1986-09-19

Family

ID=12186270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8401270A Expired FR2541510B1 (fr) 1983-02-21 1984-01-27 Procede et appareil pour le traitement thermique d'un article du type en forme de plaque, notamment d'une pastille semiconductrice

Country Status (9)

Country Link
US (2) US4593168A (fr)
JP (1) JPH0669027B2 (fr)
KR (1) KR840008086A (fr)
DE (1) DE3402630A1 (fr)
FR (1) FR2541510B1 (fr)
GB (1) GB2136258B (fr)
HK (1) HK288A (fr)
IT (1) IT1173301B (fr)
SG (1) SG87887G (fr)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
DE3330910A1 (de) * 1983-08-27 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum herstellen eines reaktionsgefaesses fuer kristallzuchtzwecke
FR2572176B1 (fr) * 1984-10-19 1987-02-20 Inst Textile De France Procede et dispositif de mesure par radiometrie micro-onde de la temperature d'un materiau plan en defilement, notamment textile
US4677758A (en) * 1985-10-08 1987-07-07 Seiichiro Aigo Spin drier for semiconductor material
DE3608783A1 (de) * 1986-03-15 1987-09-17 Telefunken Electronic Gmbh Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
JPS63293167A (ja) * 1987-05-26 1988-11-30 Canon Inc マイクロ波プラズマｃｖｄ法による機能性堆積膜形成法
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material
ATE208961T1 (de) * 1988-05-24 2001-11-15 Unaxis Balzers Ag Vakuumanlage
US4851630A (en) * 1988-06-23 1989-07-25 Applied Science & Technology, Inc. Microwave reactive gas generator
JP2776859B2 (ja) * 1989-01-11 1998-07-16 株式会社日立製作所 薄膜形成方法
US5126533A (en) * 1990-03-19 1992-06-30 Conductus, Inc. Substrate heater utilizing protective heat sinking means
US5837978A (en) * 1990-07-11 1998-11-17 International Business Machines Corporation Radiation control system
JP2728766B2 (ja) * 1990-07-18 1998-03-18 株式会社東芝 半導体の処理方法およびその装置
US5064979A (en) * 1990-08-07 1991-11-12 W. R. Grace & Co.-Conn. Microwave air float bar for drying a traveling web
FR2670950B1 (fr) * 1990-12-20 1993-04-16 Motorola Semiconducteurs Procede et appareil pour le traitement de recuit des dispositifs a semiconducteur.
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5296271A (en) * 1991-06-13 1994-03-22 Motorola, Inc. Microwave treatment of photoresist on a substrate
US5284805A (en) * 1991-07-11 1994-02-08 Sematech, Inc. Rapid-switching rotating disk reactor
US5519193A (en) * 1992-10-27 1996-05-21 International Business Machines Corporation Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5395794A (en) * 1993-04-22 1995-03-07 Sklyarevich; Vladislav E. Method of treating semiconductor materials
US5669316A (en) * 1993-12-10 1997-09-23 Sony Corporation Turntable for rotating a wafer carrier
US5811631A (en) * 1994-04-29 1998-09-22 Motorola, Inc. Apparatus and method for decomposition of chemical compounds using a self-supporting member
RU95106478A (ru) * 1994-04-29 1997-01-20 Моторола Устройство и способ для разложения химических соединений
US5663476A (en) * 1994-04-29 1997-09-02 Motorola, Inc. Apparatus and method for decomposition of chemical compounds by increasing residence time of a chemical compound in a reaction chamber
JPH08186081A (ja) 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US6078035A (en) * 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
JP3297591B2 (ja) * 1996-04-17 2002-07-02 シャープ株式会社 アクティブマトリクス基板の製造方法並びに液晶表示装置
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
AU6964098A (en) * 1997-04-10 1998-10-30 Nucon Systems, Inc. Process and apparatus for microwave joining thick-walled ceramic parts
TW373063B (en) * 1997-08-04 1999-11-01 Matsushita Electric Ind Co Ltd Method of heat treating object and apparatus for the same
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
KR100481039B1 (ko) 1997-12-31 2005-05-16 삼성전자주식회사 마이크로웨이브를사용한박막형성장치및그방법
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6322116B1 (en) 1999-07-23 2001-11-27 Asm America, Inc. Non-contact end effector
TW449931B (en) * 2000-01-27 2001-08-11 United Epitaxy Co Ltd Manufacturing method of P-type semiconductor with a low resistance coefficient
ATE257277T1 (de) * 2000-10-31 2004-01-15 Sez Ag Vorrichtung zur flüssigkeitsbehandlung von scheibenförmigen gegenständen
US6749764B1 (en) * 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP2003297901A (ja) * 2002-04-05 2003-10-17 Supurauto:Kk 基板処理システムおよびその処理方法
AU2003280310A1 (en) * 2002-11-14 2004-06-03 Foss Analytical A/S A method and apparatus for determining a property of a sample
WO2004053188A1 (fr) * 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Systeme suscepteur
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
US7039836B2 (en) * 2003-04-01 2006-05-02 Hewlett-Packard Development Company, L.P. High performance computer system having a firmware error queue and automatic error handling
US20040224508A1 (en) * 2003-05-06 2004-11-11 Applied Materials Israel Ltd Apparatus and method for cleaning a substrate using a homogenized and non-polarized radiation beam
US7070661B2 (en) * 2003-08-22 2006-07-04 Axcelis Technologies, Inc. Uniform gas cushion wafer support
US20050123692A1 (en) * 2003-12-04 2005-06-09 Tangidyne Corporation Method and apparatus for carrying out chemical vapor deposition
US6997989B2 (en) * 2003-12-08 2006-02-14 Boston Scientific Scimed, Inc. Medical implant processing chamber
JP4923189B2 (ja) * 2004-06-09 2012-04-25 イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル 支持システム
US7576835B2 (en) * 2005-07-06 2009-08-18 Asml Netherlands B.V. Substrate handler, lithographic apparatus and device manufacturing method
US9048270B2 (en) * 2007-03-08 2015-06-02 Joseph M. Wander Apparatus and method for heating semiconductor wafers via microwaves
US20100077615A1 (en) * 2008-09-26 2010-04-01 Foxconn Technology Co., Ltd. Method for manufacturing a plate-type heat pipe
WO2014084229A1 (fr) 2012-11-30 2014-06-05 株式会社ニコン Système de transfert, appareil d'exposition, procédé de transfert, procédé d'exposition, procédé de fabrication de dispositif, et appareil d'aspiration
JP5685615B2 (ja) * 2013-03-25 2015-03-18 東京エレクトロン株式会社 マイクロ波加熱処理方法
JP6188145B2 (ja) * 2013-09-27 2017-08-30 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US10727374B2 (en) 2015-09-04 2020-07-28 Seoul Semiconductor Co., Ltd. Transparent conductive structure and formation thereof
US10981800B2 (en) * 2016-04-14 2021-04-20 Seoul Semiconductor Co., Ltd. Chamber enclosure and/or wafer holder for synthesis of zinc oxide
US10981801B2 (en) 2016-04-14 2021-04-20 Seoul Semiconductor Co., Ltd. Fluid handling system for synthesis of zinc oxide
TWI810772B (zh) * 2021-12-30 2023-08-01 日揚科技股份有限公司 一種快速退火設備

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639014A1 (de) * 1968-02-15 1971-04-01 Halbleiterwerk Frankfurt Oder Verfahren zum Kontaktieren von Halbleiteranordnungen
US3521018A (en) * 1968-09-26 1970-07-21 Ibm Temperature sensor
US3699298A (en) * 1971-12-23 1972-10-17 Western Electric Co Methods and apparatus for heating and/or coating articles
JPS5214370A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Baking device
US4013485A (en) * 1976-04-29 1977-03-22 International Business Machines Corporation Process for eliminating undesirable charge centers in MIS devices
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
JPS5469384A (en) * 1977-11-14 1979-06-04 Matsushita Electric Ind Co Ltd Electric furnace unit
US4245143A (en) * 1978-04-28 1981-01-13 Hitachi Heating Appliances Co., Ltd. Microwave oven
JPS54142638A (en) * 1978-04-28 1979-11-07 Hitachi Heating Appliance Co Ltd High frequency heating device
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
JPS5546310A (en) * 1978-09-27 1980-04-01 Hitachi Ltd Method of controlling temperature in furnace
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
US4254319A (en) * 1979-06-25 1981-03-03 Bruce Beh Portable microwave oven-turntable device
US4281031A (en) * 1979-07-25 1981-07-28 Machine Technology, Inc. Method and apparatus for processing workpieces
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
DE3027934A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur einseitigen aetzung von halbleiterscheiben
JPS5824431A (ja) * 1981-08-06 1983-02-14 Sumitomo Rubber Ind Ltd エラストマ−物品の予熱方法
GB2106709B (en) * 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法

Also Published As

Publication number Publication date
GB2136258B (en) 1986-12-31
GB8401816D0 (en) 1984-02-29
US4593168A (en) 1986-06-03
HK288A (en) 1988-01-15
IT8419694A0 (it) 1984-02-17
US4667076A (en) 1987-05-19
JPH0669027B2 (ja) 1994-08-31
JPS59152618A (ja) 1984-08-31
IT1173301B (it) 1987-06-24
DE3402630A1 (de) 1984-08-23
GB2136258A (en) 1984-09-12
KR840008086A (ko) 1984-12-12
FR2541510A1 (fr) 1984-08-24
SG87887G (en) 1988-05-20

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