HK1246503A1 - 芯片裝置和用於構成接觸連接部的方法 - Google Patents
芯片裝置和用於構成接觸連接部的方法Info
- Publication number
- HK1246503A1 HK1246503A1 HK18105700.0A HK18105700A HK1246503A1 HK 1246503 A1 HK1246503 A1 HK 1246503A1 HK 18105700 A HK18105700 A HK 18105700A HK 1246503 A1 HK1246503 A1 HK 1246503A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- forming
- contact connection
- chip arrangement
- chip
- arrangement
- Prior art date
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Powder Metallurgy (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015103779.3A DE102015103779A1 (de) | 2015-03-16 | 2015-03-16 | Chipanordnung und Verfahren zur Ausbildung einer Kontaktverbindung |
PCT/EP2016/053169 WO2016146323A2 (de) | 2015-03-16 | 2016-02-15 | Chipanordnung und verfahren zur ausbildung einer kontaktverbindung |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1246503A1 true HK1246503A1 (zh) | 2018-09-07 |
Family
ID=55446742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK18105700.0A HK1246503A1 (zh) | 2015-03-16 | 2018-05-03 | 芯片裝置和用於構成接觸連接部的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20180047697A1 (zh) |
EP (1) | EP3271938A2 (zh) |
JP (1) | JP2018511175A (zh) |
KR (1) | KR102082037B1 (zh) |
CN (1) | CN107431058A (zh) |
DE (1) | DE102015103779A1 (zh) |
HK (1) | HK1246503A1 (zh) |
TW (1) | TWI625801B (zh) |
WO (1) | WO2016146323A2 (zh) |
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JP7117883B2 (ja) * | 2018-04-05 | 2022-08-15 | 三菱電機株式会社 | 半導体モジュールおよびその製造方法 |
WO2020026639A1 (ja) * | 2018-08-03 | 2020-02-06 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および撮像装置ならびに半導体装置の製造方法 |
DE102018119331A1 (de) * | 2018-08-08 | 2020-02-13 | Endress+Hauser Flowtec Ag | Herstellungsverfahren einer Spulenvorrichtung, Spulenvorrichtung, Messaufnehmer mit Spulenvorrichtung, Messgerät mit einem Messaufnehmer |
CN110416101A (zh) * | 2019-08-07 | 2019-11-05 | 深圳市顺益微电子有限公司 | 用烧结银浆作为粘接剂的电源模块铜片焊接工艺 |
US11289441B2 (en) * | 2019-10-09 | 2022-03-29 | Wolfspeed, Inc. | Systems and processes for increasing semiconductor device reliability |
KR20210129483A (ko) * | 2020-04-20 | 2021-10-28 | 현대자동차주식회사 | 솔더링 구조, 이를 갖는 파워 모듈 및 파워 모듈의 제조 방법 |
EP3926675A1 (de) | 2020-06-19 | 2021-12-22 | Heraeus Nexensos GmbH | Temperaturstabiler verbund einer litze mit einem agpt-pad |
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-
2015
- 2015-03-16 DE DE102015103779.3A patent/DE102015103779A1/de active Pending
-
2016
- 2016-02-15 US US15/557,591 patent/US20180047697A1/en not_active Abandoned
- 2016-02-15 JP JP2017548176A patent/JP2018511175A/ja active Pending
- 2016-02-15 KR KR1020177026415A patent/KR102082037B1/ko active IP Right Grant
- 2016-02-15 CN CN201680015610.6A patent/CN107431058A/zh active Pending
- 2016-02-15 EP EP16706510.1A patent/EP3271938A2/de active Pending
- 2016-02-15 WO PCT/EP2016/053169 patent/WO2016146323A2/de active Application Filing
- 2016-03-01 TW TW105106213A patent/TWI625801B/zh active
-
2018
- 2018-05-03 HK HK18105700.0A patent/HK1246503A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP3271938A2 (de) | 2018-01-24 |
KR20170126469A (ko) | 2017-11-17 |
WO2016146323A2 (de) | 2016-09-22 |
US20180047697A1 (en) | 2018-02-15 |
WO2016146323A3 (de) | 2016-11-03 |
TWI625801B (zh) | 2018-06-01 |
CN107431058A (zh) | 2017-12-01 |
TW201642366A (zh) | 2016-12-01 |
DE102015103779A1 (de) | 2016-09-22 |
KR102082037B1 (ko) | 2020-04-29 |
JP2018511175A (ja) | 2018-04-19 |
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