HK1208559A1 - Slurry for chemical mechanical polishing and chemical mechanical polishing method - Google Patents

Slurry for chemical mechanical polishing and chemical mechanical polishing method

Info

Publication number
HK1208559A1
HK1208559A1 HK15108991.5A HK15108991A HK1208559A1 HK 1208559 A1 HK1208559 A1 HK 1208559A1 HK 15108991 A HK15108991 A HK 15108991A HK 1208559 A1 HK1208559 A1 HK 1208559A1
Authority
HK
Hong Kong
Prior art keywords
mechanical polishing
chemical mechanical
slurry
polishing method
chemical
Prior art date
Application number
HK15108991.5A
Other languages
English (en)
Chinese (zh)
Inventor
Mitsuru Kato
Chihiro Okamoto
Shinya Kato
Original Assignee
Kuraray Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co filed Critical Kuraray Co
Publication of HK1208559A1 publication Critical patent/HK1208559A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
HK15108991.5A 2012-05-30 2015-09-15 Slurry for chemical mechanical polishing and chemical mechanical polishing method HK1208559A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012123472 2012-05-30
PCT/JP2013/064676 WO2013180079A1 (ja) 2012-05-30 2013-05-27 化学機械研磨用スラリーおよび化学機械研磨方法

Publications (1)

Publication Number Publication Date
HK1208559A1 true HK1208559A1 (en) 2016-03-04

Family

ID=49673273

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15108991.5A HK1208559A1 (en) 2012-05-30 2015-09-15 Slurry for chemical mechanical polishing and chemical mechanical polishing method

Country Status (9)

Country Link
US (1) US9437446B2 (xx)
EP (1) EP2858097B1 (xx)
JP (1) JP6088505B2 (xx)
KR (1) KR101726486B1 (xx)
CN (1) CN104471684B (xx)
HK (1) HK1208559A1 (xx)
IL (1) IL235859A0 (xx)
TW (1) TWI626303B (xx)
WO (1) WO2013180079A1 (xx)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3247401B1 (en) 2015-01-20 2019-09-18 Cerion LLC Edds chelated nanoceria with catalase-like activity
JP6744295B2 (ja) * 2015-04-01 2020-08-19 三井金属鉱業株式会社 研摩材および研摩スラリー
CN205703794U (zh) * 2015-06-29 2016-11-23 智胜科技股份有限公司 研磨垫的研磨层
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR101628878B1 (ko) * 2015-09-25 2016-06-16 영창케미칼 주식회사 Cmp용 슬러리 조성물 및 이를 이용한 연마방법
KR101715931B1 (ko) * 2015-12-11 2017-03-14 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
CN105505231A (zh) * 2016-02-24 2016-04-20 湖南皓志科技股份有限公司 一种高效碳化硼研磨液及其配制方法
CN107221511B (zh) * 2016-03-22 2020-09-29 世界先进积体电路股份有限公司 沟槽隔离结构的制造方法
KR102170859B1 (ko) * 2016-07-29 2020-10-28 주식회사 쿠라레 연마 패드 및 그것을 사용한 연마 방법
KR101916929B1 (ko) * 2016-12-30 2018-11-08 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
KR101935965B1 (ko) * 2016-12-30 2019-01-08 주식회사 케이씨텍 Ild 연마 공정용 슬러리 조성물
JP7187770B2 (ja) * 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
KR102634300B1 (ko) * 2017-11-30 2024-02-07 솔브레인 주식회사 연마용 슬러리 조성물 및 고단차 반도체 박막의 연마 방법
CN114599752A (zh) * 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于选择性化学机械抛光氧化物的组合物及方法
JPWO2022224356A1 (xx) * 2021-04-20 2022-10-27
WO2024071285A1 (ja) * 2022-09-30 2024-04-04 富士フイルム株式会社 半導体デバイスの製造方法、処理液、キット

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TW510917B (en) 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
JP4021080B2 (ja) 1998-11-27 2007-12-12 花王株式会社 研磨液組成物
EP1566421B1 (en) 1998-12-25 2014-12-10 Hitachi Chemical Company, Ltd. CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate.
TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
JP2004075859A (ja) 2002-08-19 2004-03-11 Chubu Kiresuto Kk 研磨スラリーの清浄化法
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
EP1610365B1 (en) * 2003-03-18 2012-08-08 Nomura Micro Science Co., Ltd. Material for purification of semiconductor polishing slurry, module for purification of semiconductor polishing slurry and process for producing semiconductor polishing slurry
JP5133874B2 (ja) 2005-04-28 2013-01-30 テクノ セミケム シーオー．， エルティーディー． 高段差酸化膜の平坦化のための自動研磨停止機能を有する化学機械的研磨組成物
DE102005059751A1 (de) 2005-12-09 2007-06-14 Ferropharm Gmbh Forschungslabor Wässrige Dispersion von superparamagnetischen Eindomänenteilchen, deren Herstellung und Verwendung zur Diagnose und Therapie
US20070210278A1 (en) 2006-03-08 2007-09-13 Lane Sarah J Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
WO2008151918A1 (en) 2007-06-12 2008-12-18 Basf Se A process for polishing patterned and unstructured surfaces of materials and an aqueous polishing agent to be used in the said process
US8435421B2 (en) * 2007-11-27 2013-05-07 Cabot Microelectronics Corporation Metal-passivating CMP compositions and methods
CN103396765A (zh) * 2008-04-23 2013-11-20 日立化成工业株式会社 研磨剂及使用该研磨剂的基板研磨方法
KR20110127244A (ko) * 2009-03-11 2011-11-24 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 상의 잔류물을 제거하기 위한 세정 조성물
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JP2012123472A (ja) 2010-12-06 2012-06-28 Toyota Motor Corp 走行軌跡生成装置

Also Published As

Publication number Publication date
KR20150020614A (ko) 2015-02-26
WO2013180079A1 (ja) 2013-12-05
TW201412961A (zh) 2014-04-01
JP6088505B2 (ja) 2017-03-01
CN104471684B (zh) 2018-01-23
TWI626303B (zh) 2018-06-11
EP2858097B1 (en) 2019-02-27
EP2858097A1 (en) 2015-04-08
CN104471684A (zh) 2015-03-25
US9437446B2 (en) 2016-09-06
KR101726486B1 (ko) 2017-04-26
EP2858097A4 (en) 2016-01-06
IL235859A0 (en) 2015-01-29
JPWO2013180079A1 (ja) 2016-01-21
US20150147884A1 (en) 2015-05-28

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