HK1204388A1 - Semiconductor light emitting device and method for manufacturing same - Google Patents

Semiconductor light emitting device and method for manufacturing same

Info

Publication number
HK1204388A1
HK1204388A1 HK15104716.8A HK15104716A HK1204388A1 HK 1204388 A1 HK1204388 A1 HK 1204388A1 HK 15104716 A HK15104716 A HK 15104716A HK 1204388 A1 HK1204388 A1 HK 1204388A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting device
semiconductor light
manufacturing same
manufacturing
Prior art date
Application number
HK15104716.8A
Other languages
English (en)
Chinese (zh)
Inventor
Hideyuki Tomizawa
Akihiro Kojima
Miyoko Shimada
Yosuke Akimoto
Miyuki Shimojuku
Hideto Furuyama
Yoshiaki Sugizaki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of HK1204388A1 publication Critical patent/HK1204388A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
HK15104716.8A 2013-07-31 2015-05-18 Semiconductor light emitting device and method for manufacturing same HK1204388A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013159346A JP6045999B2 (ja) 2013-07-31 2013-07-31 半導体発光装置及びその製造方法

Publications (1)

Publication Number Publication Date
HK1204388A1 true HK1204388A1 (en) 2015-11-13

Family

ID=49917023

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15104716.8A HK1204388A1 (en) 2013-07-31 2015-05-18 Semiconductor light emitting device and method for manufacturing same

Country Status (6)

Country Link
US (1) US9172016B2 (ja)
EP (1) EP2833421B1 (ja)
JP (1) JP6045999B2 (ja)
KR (1) KR20150015345A (ja)
HK (1) HK1204388A1 (ja)
TW (1) TWI529970B (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10270008B2 (en) 2015-03-16 2019-04-23 Seoul Viosys Co., Ltd. Light emitting element including metal bulk
JP6553378B2 (ja) * 2015-03-16 2019-07-31 アルパッド株式会社 半導体発光装置
JP6555907B2 (ja) 2015-03-16 2019-08-07 アルパッド株式会社 半導体発光装置
KR102038443B1 (ko) 2015-03-26 2019-10-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR102422246B1 (ko) 2015-07-30 2022-07-19 삼성전자주식회사 발광 소자 패키지
DE102015112538B4 (de) * 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
CN107924970B (zh) 2015-08-03 2020-04-03 创光科学株式会社 氮化物半导体晶圆及其制造方法、以及氮化物半导体紫外线发光元件及装置
DE102015113310B4 (de) 2015-08-12 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
JP6288009B2 (ja) * 2015-08-31 2018-03-07 日亜化学工業株式会社 発光装置の製造方法
JP6649726B2 (ja) * 2015-09-11 2020-02-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体発光装置およびその製造方法
JP6815119B2 (ja) * 2016-07-27 2021-01-20 株式会社ディスコ ウエーハの加工方法及び発光デバイス
US10193043B2 (en) 2016-07-28 2019-01-29 Lumileds Llc Light emitting device package with reflective side coating
JP7280820B2 (ja) * 2016-07-28 2023-05-24 ルミレッズ リミテッド ライアビリティ カンパニー 反射性側面コーティングを伴う発光デバイスの製造方法
DE102016116460A1 (de) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102017106508A1 (de) * 2017-03-27 2018-09-27 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Herstellungsverfahren
US10707672B2 (en) * 2017-05-04 2020-07-07 Intel Corporation Methods and apparatus for battery current monitoring
US11049691B2 (en) * 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
US11515456B2 (en) * 2019-02-21 2022-11-29 Innolux Corporation LED with light adjusting layer extending past the LED
US20210336090A1 (en) * 2020-04-23 2021-10-28 Epistar Corporation Light-emitting device and manufacturing method thereof
US11804416B2 (en) * 2020-09-08 2023-10-31 UTAC Headquarters Pte. Ltd. Semiconductor device and method of forming protective layer around cavity of semiconductor die
KR102530795B1 (ko) * 2021-02-04 2023-05-10 웨이브로드 주식회사 엘이디 패키지를 제조하는 방법
WO2024050801A1 (en) * 2022-09-09 2024-03-14 Jade Bird Display (shanghai) Limited System and manufacturing method of light emitting pixel structure for improving light emitting efficiency

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JP3531475B2 (ja) * 1998-05-22 2004-05-31 日亜化学工業株式会社 フリップチップ型光半導体素子
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US8268644B2 (en) * 2008-03-25 2012-09-18 Kabushiki Kaisha Toshiba Light emitting device, and method and apparatus for manufacturing same
JP2010040621A (ja) * 2008-08-01 2010-02-18 Toshiba Corp 固体撮像デバイス及びその製造方法
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
US8507935B2 (en) * 2009-08-06 2013-08-13 Panasonic Corporation Light emitting element and light emitting device
JP2011071272A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
TWI517445B (zh) 2010-02-12 2016-01-11 精材科技股份有限公司 發光二極體封裝、用於發光二極體封裝之高反射型次基板及其製造方法
JP2011222738A (ja) * 2010-04-09 2011-11-04 Renesas Electronics Corp 半導体装置の製造方法
US20110298001A1 (en) * 2010-06-03 2011-12-08 Kabushiki Kaisha Toshiba Method for manufacturing light-emitting device and light-emitting device manufactured by the same
JP5337106B2 (ja) * 2010-06-04 2013-11-06 株式会社東芝 半導体発光装置
US8653542B2 (en) 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
JP2013021175A (ja) 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
JP2013065773A (ja) 2011-09-20 2013-04-11 Toshiba Corp 半導体発光素子
JP5767934B2 (ja) * 2011-10-07 2015-08-26 シチズンホールディングス株式会社 半導体発光素子の製造方法
KR101969334B1 (ko) 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치

Also Published As

Publication number Publication date
JP2015032621A (ja) 2015-02-16
EP2833421B1 (en) 2018-12-12
US20150034985A1 (en) 2015-02-05
EP2833421A1 (en) 2015-02-04
KR20150015345A (ko) 2015-02-10
JP6045999B2 (ja) 2016-12-14
US9172016B2 (en) 2015-10-27
TW201505212A (zh) 2015-02-01
TWI529970B (zh) 2016-04-11

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