HK1183161A1 - 用於半導體裝置中的襯墊下電路的襯墊設計 - Google Patents
用於半導體裝置中的襯墊下電路的襯墊設計Info
- Publication number
- HK1183161A1 HK1183161A1 HK13110328.7A HK13110328A HK1183161A1 HK 1183161 A1 HK1183161 A1 HK 1183161A1 HK 13110328 A HK13110328 A HK 13110328A HK 1183161 A1 HK1183161 A1 HK 1183161A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- pad
- semiconductor devices
- circuit under
- design
- pad design
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/288,731 US8569856B2 (en) | 2011-11-03 | 2011-11-03 | Pad design for circuit under pad in semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1183161A1 true HK1183161A1 (zh) | 2013-12-13 |
Family
ID=48206676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK13110328.7A HK1183161A1 (zh) | 2011-11-03 | 2013-09-05 | 用於半導體裝置中的襯墊下電路的襯墊設計 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8569856B2 (zh) |
CN (1) | CN103094293B (zh) |
HK (1) | HK1183161A1 (zh) |
TW (1) | TWI495096B (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8569856B2 (en) * | 2011-11-03 | 2013-10-29 | Omnivision Technologies, Inc. | Pad design for circuit under pad in semiconductor devices |
JP2013143532A (ja) * | 2012-01-12 | 2013-07-22 | Toshiba Corp | 半導体装置 |
KR20130106619A (ko) * | 2012-03-20 | 2013-09-30 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US8946784B2 (en) | 2013-02-18 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for image sensor packaging |
US9041206B2 (en) * | 2013-03-12 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
US9722099B2 (en) * | 2013-03-14 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light sensing device with outgassing hole in a light shielding layer and an anti-reflection film |
CN103280449B (zh) * | 2013-05-16 | 2016-06-01 | 华进半导体封装先导技术研发中心有限公司 | 一种背照图像传感器的制造方法 |
CN104576664B (zh) * | 2013-10-23 | 2018-04-20 | 豪威科技(上海)有限公司 | 一种背照式cmos传感器及其制造方法 |
US9398237B2 (en) * | 2014-04-30 | 2016-07-19 | Sony Corporation | Image sensor with floating diffusion interconnect capacitor |
US9324755B2 (en) * | 2014-05-05 | 2016-04-26 | Semiconductor Components Industries, Llc | Image sensors with reduced stack height |
US9252179B2 (en) * | 2014-06-13 | 2016-02-02 | Visera Technologies Company Limited | Image sensor structures |
US9634053B2 (en) * | 2014-12-09 | 2017-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor chip sidewall interconnection |
US9748301B2 (en) * | 2015-01-09 | 2017-08-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US9490282B2 (en) * | 2015-03-19 | 2016-11-08 | Omnivision Technologies, Inc. | Photosensitive capacitor pixel for image sensor |
US9818776B2 (en) | 2015-04-08 | 2017-11-14 | Semiconductor Components Industries, Llc | Integrating bond pad structures with light shielding structures on an image sensor |
US10217783B2 (en) | 2015-04-08 | 2019-02-26 | Semiconductor Components Industries, Llc | Methods for forming image sensors with integrated bond pad structures |
TWI692859B (zh) * | 2015-05-15 | 2020-05-01 | 日商新力股份有限公司 | 固體攝像裝置及其製造方法、以及電子機器 |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
KR102467033B1 (ko) * | 2015-10-29 | 2022-11-14 | 삼성전자주식회사 | 적층형 반도체 소자 |
US9773829B2 (en) * | 2016-02-03 | 2017-09-26 | Omnivision Technologies, Inc. | Through-semiconductor-via capping layer as etch stop layer |
JP2017183407A (ja) * | 2016-03-29 | 2017-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10109666B2 (en) * | 2016-04-13 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pad structure for backside illuminated (BSI) image sensors |
US10141932B1 (en) * | 2017-08-04 | 2018-11-27 | Micron Technology, Inc. | Wiring with external terminal |
KR102430496B1 (ko) | 2017-09-29 | 2022-08-08 | 삼성전자주식회사 | 이미지 센싱 장치 및 그 제조 방법 |
KR102483548B1 (ko) | 2017-10-31 | 2023-01-02 | 삼성전자주식회사 | 이미지 센싱 장치 |
TWI644410B (zh) * | 2018-01-30 | 2018-12-11 | 絡達科技股份有限公司 | 接墊結構、應用其之半導體晶片及其製造方法 |
CN110211977B (zh) * | 2019-04-30 | 2021-11-30 | 德淮半导体有限公司 | 三维堆栈式cis及其形成方法 |
KR20210122526A (ko) * | 2020-04-01 | 2021-10-12 | 에스케이하이닉스 주식회사 | 이미지 센서 장치 |
KR20210122525A (ko) * | 2020-04-01 | 2021-10-12 | 에스케이하이닉스 주식회사 | 이미지 센서 장치 |
KR20210137677A (ko) * | 2020-05-11 | 2021-11-18 | 에스케이하이닉스 주식회사 | 이미지 센서 장치 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043144A (en) * | 1998-05-25 | 2000-03-28 | United Microelectronics Corp. | Bonding-pad structure for integrated circuit and method of fabricating the same |
JP3324581B2 (ja) * | 1999-09-21 | 2002-09-17 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
US6765276B2 (en) * | 2001-08-23 | 2004-07-20 | Agilent Technologies, Inc. | Bottom antireflection coating color filter process for fabricating solid state image sensors |
JP4046069B2 (ja) * | 2003-11-17 | 2008-02-13 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
KR100653691B1 (ko) * | 2004-07-16 | 2006-12-04 | 삼성전자주식회사 | 적어도 메인 화소 어레이 영역의 전면을 노출시키는패시베이션막을 갖는 이미지 센서들 및 그 제조방법들 |
US8494415B2 (en) * | 2006-02-20 | 2013-07-23 | Kyocera Corporation | Light emitting element array, light emitting device, and image forming apparatus |
CN100446288C (zh) * | 2006-08-01 | 2008-12-24 | 金芃 | 通孔垂直结构的半导体芯片及其制造方法 |
US7879638B2 (en) * | 2007-03-02 | 2011-02-01 | Aptina Imaging Corporation | Backside illuminated imager and method of fabricating the same |
US9231012B2 (en) * | 2007-08-01 | 2016-01-05 | Visera Technologies Company Limited | Image sensor package |
US7531373B2 (en) * | 2007-09-19 | 2009-05-12 | Micron Technology, Inc. | Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry |
US7859033B2 (en) * | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
US8283250B2 (en) * | 2008-12-10 | 2012-10-09 | Stats Chippac, Ltd. | Semiconductor device and method of forming a conductive via-in-via structure |
US8258010B2 (en) * | 2009-03-17 | 2012-09-04 | Stats Chippac, Ltd. | Making a semiconductor device having conductive through organic vias |
US8456856B2 (en) * | 2009-03-30 | 2013-06-04 | Megica Corporation | Integrated circuit chip using top post-passivation technology and bottom structure technology |
US8502335B2 (en) * | 2009-07-29 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor big via bonding pad application for AlCu Process |
US8344471B2 (en) * | 2009-07-29 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor big via bonding pad application for AICu process |
US8748305B2 (en) * | 2009-11-17 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad structure for semiconductor devices |
US20110221018A1 (en) * | 2010-03-15 | 2011-09-15 | Xunqing Shi | Electronic Device Package and Methods of Manufacturing an Electronic Device Package |
TWI505413B (zh) * | 2011-07-20 | 2015-10-21 | Xintec Inc | 晶片封裝體及其製造方法 |
US8569856B2 (en) * | 2011-11-03 | 2013-10-29 | Omnivision Technologies, Inc. | Pad design for circuit under pad in semiconductor devices |
-
2011
- 2011-11-03 US US13/288,731 patent/US8569856B2/en active Active
-
2012
- 2012-10-31 TW TW101140394A patent/TWI495096B/zh active
- 2012-11-02 CN CN201210432343.6A patent/CN103094293B/zh active Active
-
2013
- 2013-09-05 HK HK13110328.7A patent/HK1183161A1/zh unknown
- 2013-10-14 US US14/052,944 patent/US8729712B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20140035089A1 (en) | 2014-02-06 |
CN103094293B (zh) | 2015-10-21 |
US20130113065A1 (en) | 2013-05-09 |
TW201327792A (zh) | 2013-07-01 |
CN103094293A (zh) | 2013-05-08 |
TWI495096B (zh) | 2015-08-01 |
US8569856B2 (en) | 2013-10-29 |
US8729712B2 (en) | 2014-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1183161A1 (zh) | 用於半導體裝置中的襯墊下電路的襯墊設計 | |
TWI562156B (en) | Semiconductor device | |
TWI560842B (en) | Semiconductor device | |
SG11201504823YA (en) | Semiconductor device | |
SG11201504507TA (en) | Semiconductor device | |
EP2717300A4 (en) | SEMICONDUCTOR DEVICE | |
SG11201505099TA (en) | Semiconductor device | |
SG11201505088UA (en) | Semiconductor device | |
EP2587528A4 (en) | SEMICONDUCTOR COMPONENT | |
EP2546882A4 (en) | SEMICONDUCTOR DEVICE | |
EP2562818A4 (en) | SEMICONDUCTOR DEVICE | |
EP2763160A4 (en) | SEMICONDUCTOR DEVICE | |
EP2560206A4 (en) | SEMICONDUCTOR COMPONENT | |
TWI562360B (en) | Semiconductor device | |
EP2541609A4 (en) | SEMICONDUCTOR DEVICE | |
EP2560207A4 (en) | SEMICONDUCTOR COMPONENT | |
EP2779225A4 (en) | SEMICONDUCTOR DEVICE | |
EP2725623A4 (en) | SEMICONDUCTOR COMPONENT | |
EP2752875A4 (en) | SEMICONDUCTOR DEVICE | |
EP2720263A4 (en) | SEMICONDUCTOR COMPONENT | |
EP2549534A4 (en) | SEMICONDUCTOR DEVICE | |
SG10201601757UA (en) | Semiconductor device | |
EP2717305A4 (en) | INTEGRATED CIRCUIT INSPECTION DEVICE | |
EP2672516A4 (en) | SEMICONDUCTOR DEVICE | |
TWI561832B (en) | Semiconductor integrated circuit |