HK1176743A1 - 用於微機電系統器件的半導體封裝體及其製造方法 - Google Patents

用於微機電系統器件的半導體封裝體及其製造方法

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Publication number
HK1176743A1
HK1176743A1 HK13103697.5A HK13103697A HK1176743A1 HK 1176743 A1 HK1176743 A1 HK 1176743A1 HK 13103697 A HK13103697 A HK 13103697A HK 1176743 A1 HK1176743 A1 HK 1176743A1
Authority
HK
Hong Kong
Prior art keywords
manufacturing
same
semiconductor package
mems device
mems
Prior art date
Application number
HK13103697.5A
Other languages
English (en)
Inventor
.羅
.萬
.譚
Original Assignee
優博創新科技產權有限公司
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Filing date
Publication date
Application filed by 優博創新科技產權有限公司 filed Critical 優博創新科技產權有限公司
Publication of HK1176743A1 publication Critical patent/HK1176743A1/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032Packages or encapsulation
    • B81B7/0061Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0257Microphones or microspeakers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/09Packages
    • B81B2207/091Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094Feed-through, via
    • B81B2207/096Feed-through, via through the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16151Cap comprising an aperture, e.g. for pressure control, encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/1617Cavity coating
    • H01L2924/16171Material
    • H01L2924/16172Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16251Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/166Material
    • H01L2924/167Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/166Material
    • H01L2924/1679Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003Mems transducers or their use

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
HK13103697.5A 2010-02-26 2013-03-25 用於微機電系統器件的半導體封裝體及其製造方法 HK1176743A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/070775 WO2011103720A1 (en) 2010-02-26 2010-02-26 Semiconductor package for mems device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
HK1176743A1 true HK1176743A1 (zh) 2013-08-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
HK13103697.5A HK1176743A1 (zh) 2010-02-26 2013-03-25 用於微機電系統器件的半導體封裝體及其製造方法

Country Status (5)

Country Link
US (1) US8809974B2 (zh)
KR (1) KR101443477B1 (zh)
CN (1) CN102859688B (zh)
HK (1) HK1176743A1 (zh)
WO (1) WO2011103720A1 (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8577063B2 (en) 2010-02-18 2013-11-05 Analog Devices, Inc. Packages and methods for packaging MEMS microphone devices
US9420378B1 (en) * 2010-07-12 2016-08-16 Amkor Technology, Inc. Top port MEMS microphone package and method
US8447057B2 (en) 2011-03-18 2013-05-21 Analog Devices, Inc. Packages and methods for packaging MEMS microphone devices
US8625832B2 (en) 2011-04-04 2014-01-07 Invensense, Inc. Packages and methods for packaging microphone devices
ITTO20110980A1 (it) * 2011-10-27 2013-04-28 St Microelectronics Srl Struttura incapsulante schermata e relativo metodo di fabbricazione
JP5999302B2 (ja) * 2012-02-09 2016-09-28 セイコーエプソン株式会社 電子デバイスおよびその製造方法、並びに電子機器
JP5861497B2 (ja) * 2012-02-29 2016-02-16 オムロン株式会社 センサ装置
US8779535B2 (en) 2012-03-14 2014-07-15 Analog Devices, Inc. Packaged integrated device die between an external and internal housing
US9162872B2 (en) * 2012-09-10 2015-10-20 Invensense, Inc. Pre-molded MEMS device package having conductive column coupled to leadframe and cover
US9156680B2 (en) 2012-10-26 2015-10-13 Analog Devices, Inc. Packages and methods for packaging
US9409765B1 (en) * 2013-02-01 2016-08-09 Maxim Integrated Products, Inc. Method and apparatus for an isolating structure
EP2790213A3 (en) * 2013-04-11 2015-04-01 Chun Ho Fan Cavity package
US9296607B2 (en) * 2013-07-22 2016-03-29 Invensense, Inc. Apparatus and method for reduced strain on MEMS devices
KR101538543B1 (ko) * 2013-08-13 2015-07-22 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
US9257370B2 (en) 2013-08-27 2016-02-09 Ubotic Company Limited Cavity package with pre-molded cavity leadframe
US9659855B2 (en) * 2013-08-27 2017-05-23 Ubotic Company Limited Cavity package with pre-molded substrate
WO2015031711A1 (en) * 2013-08-29 2015-03-05 Robert Bosch Gmbh Molded lead frame package with embedded die
US8912641B1 (en) * 2013-09-09 2014-12-16 Harris Corporation Low profile electronic package and associated methods
US10659889B2 (en) * 2013-11-08 2020-05-19 Infineon Technologies Ag Microphone package and method for generating a microphone signal
KR20150058780A (ko) * 2013-11-21 2015-05-29 삼성전기주식회사 마이크로폰 패키지 및 그 실장 구조
US10138115B2 (en) 2014-08-06 2018-11-27 Infineon Technologies Ag Low profile transducer module
TWI539831B (zh) * 2014-12-05 2016-06-21 財團法人工業技術研究院 微機電麥克風封裝
US9443785B2 (en) * 2014-12-19 2016-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor package
CN104811889B (zh) * 2015-03-26 2021-08-10 华天科技(西安)有限公司 一种mems麦克风封装器件的组装方法
CN104779213B (zh) * 2015-04-16 2017-12-15 歌尔股份有限公司 集成传感器的封装结构和封装方法
CN104766831B (zh) * 2015-04-16 2018-03-23 歌尔股份有限公司 一种集成传感器的封装结构
KR101684526B1 (ko) 2015-08-28 2016-12-08 현대자동차 주식회사 마이크로폰 및 그 제조 방법
KR101657650B1 (ko) * 2015-08-31 2016-09-19 주식회사 비에스이센서스 맴스 마이크로폰 패키지 및 그 방법
JP2017067463A (ja) * 2015-09-28 2017-04-06 セイコーエプソン株式会社 圧力センサー、高度計、電子機器および移動体
TWI708415B (zh) * 2015-10-16 2020-10-21 日月光半導體製造股份有限公司 封蓋結構和包含封蓋結構的半導體裝置封裝
US10589989B2 (en) * 2016-10-14 2020-03-17 Semiconductor Components Industries, Llc Absolute and differential pressure sensors and related methods
US10178764B2 (en) 2017-06-05 2019-01-08 Waymo Llc PCB optical isolation by nonuniform catch pad stack
CN107324274B (zh) * 2017-07-13 2024-04-05 中国工程物理研究院电子工程研究所 用于sip三维集成的封装载体
US10458826B2 (en) * 2017-08-25 2019-10-29 Ubotic Company Limited Mass flow sensor module and method of manufacture
US10730743B2 (en) 2017-11-06 2020-08-04 Analog Devices Global Unlimited Company Gas sensor packages
EP3824649A4 (en) 2018-07-19 2022-04-20 Cochlear Limited POLLUTION-PROOF MICROPHONE ARRANGEMENT
US10728674B2 (en) * 2018-08-27 2020-07-28 Solid State System Co., Ltd. Microphone package
US11587839B2 (en) 2019-06-27 2023-02-21 Analog Devices, Inc. Device with chemical reaction chamber
CN110769357A (zh) * 2019-10-30 2020-02-07 通用微(深圳)科技有限公司 一种采用引线框架塑料壳的麦克风封装结构
US20220384362A1 (en) * 2021-05-31 2022-12-01 Ubotic Company Limited Faraday cage plastic cavity package with pre-molded cavity leadframe
CN114040307A (zh) * 2021-11-25 2022-02-11 荣成歌尔微电子有限公司 Mems麦克风和电子设备

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524423A (en) * 1978-08-10 1980-02-21 Nissan Motor Co Ltd Semiconductor pressure sensor
JPH09222372A (ja) * 1996-02-19 1997-08-26 Mitsubishi Electric Corp 半導体式センサ
JP2991172B2 (ja) 1997-10-24 1999-12-20 日本電気株式会社 半導体装置
US6550337B1 (en) * 2000-01-19 2003-04-22 Measurement Specialties, Inc. Isolation technique for pressure sensing structure
US7466834B2 (en) * 2004-03-09 2008-12-16 Panasonic Corporation Electret condenser microphone
US7262498B2 (en) 2004-10-19 2007-08-28 Hewlett-Packard Development Company, L.P. Assembly with a ring and bonding pads formed of a same material on a substrate
KR100648398B1 (ko) * 2005-07-07 2006-11-24 주식회사 비에스이 실리콘 콘덴서 마이크로폰의 패키징 구조 및 그 제조방법
US7202552B2 (en) * 2005-07-15 2007-04-10 Silicon Matrix Pte. Ltd. MEMS package using flexible substrates, and method thereof
US7419853B2 (en) 2005-08-11 2008-09-02 Hymite A/S Method of fabrication for chip scale package for a micro component
US20070040231A1 (en) * 2005-08-16 2007-02-22 Harney Kieran P Partially etched leadframe packages having different top and bottom topologies
DE102005053765B4 (de) * 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
JP2007178133A (ja) * 2005-12-27 2007-07-12 Yamaha Corp 圧力センサモジュール、その製造方法、及び、半導体装置
US7436054B2 (en) * 2006-03-03 2008-10-14 Silicon Matrix, Pte. Ltd. MEMS microphone with a stacked PCB package and method of producing the same
KR100722686B1 (ko) * 2006-05-09 2007-05-30 주식회사 비에스이 부가적인 백 챔버를 갖고 기판에 음향홀이 형성된 실리콘콘덴서 마이크로폰
US7781852B1 (en) * 2006-12-05 2010-08-24 Amkor Technology, Inc. Membrane die attach circuit element package and method therefor
US7550828B2 (en) * 2007-01-03 2009-06-23 Stats Chippac, Inc. Leadframe package for MEMS microphone assembly
TWI333264B (en) * 2007-01-10 2010-11-11 Advanced Semiconductor Eng Packaging structure and method of mems microphone
CN101296530B (zh) 2007-04-29 2013-06-12 歌尔声学股份有限公司 硅电容传声器
US8767983B2 (en) 2007-06-01 2014-07-01 Infineon Technologies Ag Module including a micro-electro-mechanical microphone
JP2009164475A (ja) * 2008-01-09 2009-07-23 Yamaha Corp マイクロフォンパッケージ、リードフレーム、モールド基板及びマイクロフォンパッケージの実装構造
US7843021B2 (en) * 2008-02-28 2010-11-30 Shandong Gettop Acoustic Co. Ltd. Double-side mountable MEMS package
CN101282594B (zh) 2008-04-10 2013-06-05 苏州敏芯微电子技术有限公司 具有双面贴装电极的微机电传声器的封装结构
CN101394687A (zh) * 2008-10-28 2009-03-25 歌尔声学股份有限公司 硅电容麦克风
CN101415138A (zh) * 2008-11-14 2009-04-22 瑞声声学科技(深圳)有限公司 Mems换能器封装结构
KR101381438B1 (ko) 2010-04-30 2014-04-04 유보틱 인텔릭츄얼 프라퍼티 컴퍼니 리미티드 인쇄회로기판에 전기적으로 결합되도록 구성된 에어 캐비티 패키지 및 상기 에어 캐비티 패키지의 제공 방법

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CN102859688B (zh) 2015-05-27
WO2011103720A1 (en) 2011-09-01
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