HK1176739A1 - 低電感電容器、裝配其的方法和包含其的系統 - Google Patents

低電感電容器、裝配其的方法和包含其的系統

Info

Publication number
HK1176739A1
HK1176739A1 HK13104167.4A HK13104167A HK1176739A1 HK 1176739 A1 HK1176739 A1 HK 1176739A1 HK 13104167 A HK13104167 A HK 13104167A HK 1176739 A1 HK1176739 A1 HK 1176739A1
Authority
HK
Hong Kong
Prior art keywords
same
assembling
methods
systems containing
low inductance
Prior art date
Application number
HK13104167.4A
Other languages
English (en)
Inventor
E Mosley Larry
R Hendricks Clive
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1176739A1 publication Critical patent/HK1176739A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/35—Feed-through capacitors or anti-noise capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
    • H05K1/0231—Capacitors or dielectric substances

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
HK13104167.4A 2006-06-30 2013-04-05 低電感電容器、裝配其的方法和包含其的系統 HK1176739A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/428,331 US7724498B2 (en) 2006-06-30 2006-06-30 Low inductance capacitors, methods of assembling same, and systems containing same

Publications (1)

Publication Number Publication Date
HK1176739A1 true HK1176739A1 (zh) 2013-08-02

Family

ID=38875735

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13104167.4A HK1176739A1 (zh) 2006-06-30 2013-04-05 低電感電容器、裝配其的方法和包含其的系統

Country Status (7)

Country Link
US (1) US7724498B2 (zh)
JP (1) JP4974037B2 (zh)
KR (2) KR101115169B1 (zh)
CN (2) CN101479849B (zh)
HK (1) HK1176739A1 (zh)
TW (1) TWI384511B (zh)
WO (1) WO2008005749A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5605342B2 (ja) * 2010-11-09 2014-10-15 株式会社村田製作所 電子部品及び基板モジュール
US8378453B2 (en) * 2011-04-29 2013-02-19 Georgia Tech Research Corporation Devices including composite thermal capacitors
CN103959463B (zh) * 2011-10-01 2017-03-15 英特尔公司 片上电容器及其组装方法
JP2015019045A (ja) * 2013-07-15 2015-01-29 サムソン エレクトロ−メカニックス カンパニーリミテッド． アレイ型積層セラミック電子部品及びその実装基板
KR101525672B1 (ko) * 2013-07-15 2015-06-03 삼성전기주식회사 어레이형 적층 세라믹 전자 부품 및 그 실장 기판
JP6430384B2 (ja) * 2013-09-05 2018-11-28 テイ・エス テック株式会社 シート
DE202013008747U1 (de) * 2013-10-01 2013-10-23 Abb Technology Ag Energieversorgungseinrichtung für explosionsgeschützte elektronische Funktionseinheiten
DE202013009990U1 (de) * 2013-11-04 2013-11-25 Abb Technology Ag Energieversorgungseinrichtung für explosionsgeschützte elektronische Funktionseinheiten
TWI550283B (zh) * 2015-05-08 2016-09-21 High voltage detection module of high voltage detection device and its detection method
WO2018213293A1 (en) 2017-05-15 2018-11-22 Avx Corporation Multilayer capacitor and circuit board containing the same
JP2020013908A (ja) * 2018-07-18 2020-01-23 住友電工デバイス・イノベーション株式会社 電子部品の実装構造
JP7248143B2 (ja) * 2019-10-24 2023-03-29 株式会社村田製作所 複合キャパシタ
KR20210001935U (ko) 2020-02-19 2021-08-27 이재윤 흑당 쫀드기 제조 방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0438810A (ja) * 1990-06-04 1992-02-10 Hitachi Ltd ４端子型コンデンサ
JPH07263269A (ja) * 1994-03-22 1995-10-13 Tdk Corp 積層セラミックコンデンサ
US5666004A (en) 1994-09-28 1997-09-09 Intel Corporation Use of tantalum oxide capacitor on ceramic co-fired technology
JPH0982568A (ja) * 1995-09-19 1997-03-28 Murata Mfg Co Ltd セラミック電子部品
US5923523A (en) * 1996-04-30 1999-07-13 Herbert; Edward High current, low inductance capacitor packages
JP3357314B2 (ja) 1999-03-23 2002-12-16 ニチコン株式会社 低インダクタンスコンデンサ
JP3337018B2 (ja) * 1999-11-19 2002-10-21 株式会社村田製作所 積層コンデンサ、配線基板、デカップリング回路および高周波回路
US6262877B1 (en) 1999-11-23 2001-07-17 Intel Corporation Low inductance high capacitance capacitor and method of making same
US6801422B2 (en) 1999-12-28 2004-10-05 Intel Corporation High performance capacitor
US6441459B1 (en) * 2000-01-28 2002-08-27 Tdk Corporation Multilayer electronic device and method for producing same
JP2002289467A (ja) * 2001-03-23 2002-10-04 Kyocera Corp 積層セラミックコンデンサおよび実装基板
US6950300B2 (en) 2003-05-06 2005-09-27 Marvell World Trade Ltd. Ultra low inductance multi layer ceramic capacitor
JP4392530B2 (ja) 2003-06-11 2010-01-06 株式会社指月電機製作所 低インダクタンスコンデンサ
US7019346B2 (en) 2003-12-23 2006-03-28 Intel Corporation Capacitor having an anodic metal oxide substrate
US7132743B2 (en) 2003-12-23 2006-11-07 Intel Corporation Integrated circuit package substrate having a thin film capacitor structure
US7218504B2 (en) 2004-03-02 2007-05-15 Intel Corporation Capacitor device and method
US20060001068A1 (en) 2004-06-30 2006-01-05 Mosley Larry E Multi-layer capacitor using dielectric layers having differing compositions
US7173804B2 (en) 2004-09-28 2007-02-06 Intel Corporation Array capacitor with IC contacts and applications
US7216406B2 (en) 2004-09-29 2007-05-15 Intel Corporation Method forming split thin film capacitors with multiple voltages
US7180724B2 (en) 2004-09-30 2007-02-20 Intel Corporation Electrolytic polymer capacitors for decoupling power delivery, packages made therewith, and systems containing same
CN1993783B (zh) * 2004-12-24 2010-09-01 株式会社村田制作所 多层电容器及其安装结构
US7149071B2 (en) 2005-03-17 2006-12-12 Intel Corporation Controlled resistance capacitors
US7505248B2 (en) 2005-06-30 2009-03-17 Intel Corporation Controlled-resistance capacitors, and methods of assembling same
US7428138B2 (en) 2005-10-06 2008-09-23 Intel Corporation Forming carbon nanotube capacitors

Also Published As

Publication number Publication date
KR20110122761A (ko) 2011-11-10
CN102723198B (zh) 2016-01-13
US7724498B2 (en) 2010-05-25
US20080001253A1 (en) 2008-01-03
JP4974037B2 (ja) 2012-07-11
JP2009537995A (ja) 2009-10-29
TWI384511B (zh) 2013-02-01
CN101479849A (zh) 2009-07-08
KR101115169B1 (ko) 2012-02-24
WO2008005749A1 (en) 2008-01-10
CN102723198A (zh) 2012-10-10
KR20090025296A (ko) 2009-03-10
CN101479849B (zh) 2012-08-08
TW200828366A (en) 2008-07-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210628