HK1175300A1 - Germanium-based quantum well devices - Google Patents

Germanium-based quantum well devices

Info

Publication number
HK1175300A1
HK1175300A1 HK13102218.7A HK13102218A HK1175300A1 HK 1175300 A1 HK1175300 A1 HK 1175300A1 HK 13102218 A HK13102218 A HK 13102218A HK 1175300 A1 HK1175300 A1 HK 1175300A1
Authority
HK
Hong Kong
Prior art keywords
germanium
quantum well
based quantum
well devices
devices
Prior art date
Application number
HK13102218.7A
Other languages
English (en)
Chinese (zh)
Inventor
．皮爾拉瑞斯帝
．金
．楚-昆古
．梅茨
．卡瓦利羅斯
．拉多薩佛杰維科
．科托爾亞
．瑞馳梅迪
．穆克赫吉
．德威
．喬
Original Assignee
英特爾公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英特爾公司 filed Critical 英特爾公司
Publication of HK1175300A1 publication Critical patent/HK1175300A1/xx

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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
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    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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HK13102218.7A 2009-12-30 2013-02-21 Germanium-based quantum well devices HK1175300A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/655,468 US8193523B2 (en) 2009-12-30 2009-12-30 Germanium-based quantum well devices
PCT/US2010/059620 WO2011090583A2 (fr) 2009-12-30 2010-12-09 Dispositifs à puits quantique à base de germanium

Publications (1)

Publication Number Publication Date
HK1175300A1 true HK1175300A1 (en) 2013-06-28

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HK13102218.7A HK1175300A1 (en) 2009-12-30 2013-02-21 Germanium-based quantum well devices

Country Status (8)

Country Link
US (5) US8193523B2 (fr)
EP (2) EP2519974A4 (fr)
JP (2) JP5670473B2 (fr)
KR (2) KR101640420B1 (fr)
CN (1) CN102687273B (fr)
HK (1) HK1175300A1 (fr)
TW (2) TWI467758B (fr)
WO (1) WO2011090583A2 (fr)

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CN102687273A (zh) 2012-09-19
EP2519974A2 (fr) 2012-11-07
US9876014B2 (en) 2018-01-23
US20160064520A1 (en) 2016-03-03
EP2519974A4 (fr) 2014-10-08
KR20120089353A (ko) 2012-08-09
WO2011090583A3 (fr) 2011-10-13
CN102687273B (zh) 2015-05-20
JP5670473B2 (ja) 2015-02-18
US9219135B2 (en) 2015-12-22
US9478635B2 (en) 2016-10-25
US20170012116A1 (en) 2017-01-12
JP5755777B2 (ja) 2015-07-29
KR101640420B1 (ko) 2016-07-18
KR101374515B1 (ko) 2014-03-13
KR20140028147A (ko) 2014-03-07
US20110156005A1 (en) 2011-06-30
US8193523B2 (en) 2012-06-05
US20140061589A1 (en) 2014-03-06
JP2014160847A (ja) 2014-09-04
EP2933839A3 (fr) 2016-01-20
JP2013513975A (ja) 2013-04-22
TWI609485B (zh) 2017-12-21
TW201507150A (zh) 2015-02-16
US20120193609A1 (en) 2012-08-02
EP2933839A2 (fr) 2015-10-21
US8592803B2 (en) 2013-11-26
TWI467758B (zh) 2015-01-01
WO2011090583A2 (fr) 2011-07-28
TW201133834A (en) 2011-10-01

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