HK1158818A1 - Solar cell module and method for producing the same - Google Patents

Solar cell module and method for producing the same

Info

Publication number
HK1158818A1
HK1158818A1 HK11112964.4A HK11112964A HK1158818A1 HK 1158818 A1 HK1158818 A1 HK 1158818A1 HK 11112964 A HK11112964 A HK 11112964A HK 1158818 A1 HK1158818 A1 HK 1158818A1
Authority
HK
Hong Kong
Prior art keywords
solar cell
lead
spherical semiconductor
semiconductor elements
bypass diodes
Prior art date
Application number
HK11112964.4A
Other languages
English (en)
Inventor
Josuke Nakata
Original Assignee
Kyosemi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosemi Corp filed Critical Kyosemi Corp
Publication of HK1158818A1 publication Critical patent/HK1158818A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
HK11112964.4A 2008-12-19 2011-11-30 Solar cell module and method for producing the same HK1158818A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/003870 WO2010070714A1 (ja) 2008-12-19 2008-12-19 太陽電池モジュール及びその製造方法

Publications (1)

Publication Number Publication Date
HK1158818A1 true HK1158818A1 (en) 2012-07-20

Family

ID=42268405

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11112964.4A HK1158818A1 (en) 2008-12-19 2011-11-30 Solar cell module and method for producing the same

Country Status (11)

Country Link
US (1) US9608149B2 (xx)
EP (1) EP2372780A4 (xx)
JP (1) JP5017459B2 (xx)
KR (1) KR101258889B1 (xx)
CN (1) CN102224598B (xx)
AU (1) AU2008365516B2 (xx)
CA (1) CA2747540C (xx)
HK (1) HK1158818A1 (xx)
MX (1) MX2011006182A (xx)
TW (1) TWI484646B (xx)
WO (1) WO2010070714A1 (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586860B2 (en) * 2008-08-08 2013-11-19 Kyosemi Corporation See-through type solar battery module
JP5180306B2 (ja) * 2008-08-08 2013-04-10 京セミ株式会社 採光型太陽電池モジュール
CN101950772B (zh) * 2010-08-05 2013-01-23 中山大学 一种具有旁路二极管的晶体硅太阳电池的制备方法
WO2012164767A1 (ja) * 2011-05-27 2012-12-06 株式会社島津製作所 成膜装置及び成膜方法
US20150255654A1 (en) * 2014-03-04 2015-09-10 Morgan Solar Inc. Solar power cell matrix
CN105051454B (zh) 2013-03-15 2019-06-18 摩根阳光公司 光板、具有改善界面的光学组件及具有改善的制造容差的光板
CN103390672B (zh) * 2013-08-02 2016-08-10 北京汉能创昱科技有限公司 一种集成式薄膜太阳能电池组件及其制备方法
US9666733B2 (en) 2013-09-04 2017-05-30 Hyeon Woo AHN Solar cell using printed circuit board
JP2015050413A (ja) * 2013-09-04 2015-03-16 アン，ヒョン・ウー Ｐｃｂを利用した太陽電池
KR102368110B1 (ko) * 2014-05-27 2022-02-25 선파워 코포레이션 슁글드 태양 전지 모듈
US20160087132A1 (en) * 2014-09-19 2016-03-24 Hamad Musabeh Ahmed Saif Alteneiji Dynamic PV Module And Method Of Manufacturing
JP6582187B2 (ja) * 2015-03-12 2019-10-02 松文産業株式会社 半導体素子付き繊維構造体
JP6027183B2 (ja) * 2015-05-13 2016-11-16 アン，ヒョン・ウー Ｐｃｂを利用した太陽電池
KR102203801B1 (ko) * 2018-06-15 2021-01-18 (주)공존에스앤티 창문형 스마트 환기청정기
CH717208A2 (de) * 2020-03-13 2021-09-15 Urs Roethlin Einrichtung für elektrische Energieerzeugung vorzugsweise durch Sonnenenergie.
JP7412806B2 (ja) 2020-06-25 2024-01-15 スフェラーパワー株式会社 発電機能を有するガラスブロック
JP7200331B1 (ja) 2021-11-04 2023-01-06 パシフィックコンサルタンツ株式会社 表示装置
KR102588823B1 (ko) * 2023-01-06 2023-10-16 (주)소프트피브이 고효율 태양광 발전 시스템

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2239626C (en) * 1996-10-09 2003-09-02 Josuke Nakata Semiconductor device
EP0982780B1 (en) * 1998-01-23 2003-09-24 Josuke Nakata Photoelectrolytic device
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
US6218606B1 (en) * 1998-09-24 2001-04-17 Sanyo Electric Co., Ltd. Solar cell module for preventing reverse voltage to solar cells
EP1255303B1 (en) 2000-10-20 2016-06-29 Sphelar Power Corporation Light-emitting or light-detecting semiconductor module and method of manufacture thereof
JP4201241B2 (ja) * 2001-05-17 2008-12-24 株式会社カネカ 集積型薄膜光電変換モジュールの作製方法
EP1427027A4 (en) * 2001-08-13 2006-12-20 Josuke Nakata SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
AU2001277778B2 (en) 2001-08-13 2005-04-07 Sphelar Power Corporation Light-emitting or light-receiving semiconductor module and method of its manufacture
KR100619614B1 (ko) 2001-10-19 2006-09-01 죠스케 나카다 발광 또는 수광용 반도체 모듈 및 그 제조 방법
DE60230335D1 (de) * 2002-06-21 2009-01-22 Kyosemi Corp Lichtempfangs- oder lichtemissionseinrichtung und verfahren zu ihrer herstellung
US20060185715A1 (en) * 2003-07-25 2006-08-24 Hammerbacher Milfred D Photovoltaic apparatus including spherical semiconducting particles
CN1771608A (zh) * 2003-10-24 2006-05-10 京半导体股份有限公司 受光或发光模块板及其制造方法
FR2863775B1 (fr) * 2003-12-15 2006-04-21 Photowatt Internat Sa Module photovoltaique avec un dispositif electronique dans l'empilage lamine.
JP4180636B2 (ja) * 2004-03-12 2008-11-12 京セミ株式会社 積層型太陽電池
JP5171001B2 (ja) * 2005-09-30 2013-03-27 三洋電機株式会社 太陽電池モジュールの製造方法、太陽電池セルおよび太陽電池モジュール
JP5180306B2 (ja) * 2008-08-08 2013-04-10 京セミ株式会社 採光型太陽電池モジュール
WO2011096386A1 (ja) * 2010-02-08 2011-08-11 独立行政法人物質・材料研究機構 有機／金属ハイブリッドポリマーを使用したスマートウインドウ、スマートウインドウ製造方法、及びスマートウインドウシステム

Also Published As

Publication number Publication date
JPWO2010070714A1 (ja) 2012-05-24
KR101258889B1 (ko) 2013-04-29
EP2372780A4 (en) 2017-06-28
CA2747540C (en) 2015-11-24
AU2008365516A1 (en) 2011-08-11
CA2747540A1 (en) 2010-06-24
AU2008365516B2 (en) 2012-07-26
KR20110095952A (ko) 2011-08-25
MX2011006182A (es) 2011-07-20
TW201027767A (en) 2010-07-16
JP5017459B2 (ja) 2012-09-05
EP2372780A1 (en) 2011-10-05
WO2010070714A1 (ja) 2010-06-24
CN102224598A (zh) 2011-10-19
US9608149B2 (en) 2017-03-28
CN102224598B (zh) 2013-06-26
US20120222724A1 (en) 2012-09-06
TWI484646B (zh) 2015-05-11

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20181219