HK1158818A1 - Solar cell module and method for producing the same - Google Patents
Solar cell module and method for producing the sameInfo
- Publication number
- HK1158818A1 HK1158818A1 HK11112964.4A HK11112964A HK1158818A1 HK 1158818 A1 HK1158818 A1 HK 1158818A1 HK 11112964 A HK11112964 A HK 11112964A HK 1158818 A1 HK1158818 A1 HK 1158818A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- solar cell
- lead
- spherical semiconductor
- semiconductor elements
- bypass diodes
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 5
- 238000003491 array Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
This solar cell module (1) comprises a plurality of solar cell arrays (11). Each solar cell array (11) includes a plurality of spherical semiconductor elements (20) arranged in a row, at least a pair of bypass diodes (40), and a pair of lead members (14) that connect the plurality of spherical semiconductor elements (20) and the plurality of bypass diodes (40) in parallel. Each of the lead members (14) includes one or plural lead strings (15) to which the plurality of spherical semiconductor elements (20) are electrically connected and having a width less than or equal to the radius of the spherical semiconductor element (20), and plural lead pieces (16) formed integrally with the lead strings (15) at least at both end portions of the lead member (14), on which the bypass diodes (40) are electrically connected in reverse parallel to the spherical semiconductor elements (20), and having width larger than or equal to the width of the bypass diodes (40).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/003870 WO2010070714A1 (en) | 2008-12-19 | 2008-12-19 | Solar cell module and method for producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1158818A1 true HK1158818A1 (en) | 2012-07-20 |
Family
ID=42268405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11112964.4A HK1158818A1 (en) | 2008-12-19 | 2011-11-30 | Solar cell module and method for producing the same |
Country Status (11)
Country | Link |
---|---|
US (1) | US9608149B2 (en) |
EP (1) | EP2372780A4 (en) |
JP (1) | JP5017459B2 (en) |
KR (1) | KR101258889B1 (en) |
CN (1) | CN102224598B (en) |
AU (1) | AU2008365516B2 (en) |
CA (1) | CA2747540C (en) |
HK (1) | HK1158818A1 (en) |
MX (1) | MX2011006182A (en) |
TW (1) | TWI484646B (en) |
WO (1) | WO2010070714A1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101439393B1 (en) * | 2008-08-08 | 2014-09-16 | 스페라 파워 가부시키가이샤 | Daylighting solar battery module |
AU2008360293B2 (en) * | 2008-08-08 | 2014-08-14 | Sphelar Power Corporation | See-through type solar battery module |
CN101950772B (en) * | 2010-08-05 | 2013-01-23 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
JP5692373B2 (en) * | 2011-05-27 | 2015-04-01 | 株式会社島津製作所 | Film forming apparatus and film forming method |
US20150255654A1 (en) * | 2014-03-04 | 2015-09-10 | Morgan Solar Inc. | Solar power cell matrix |
US9464783B2 (en) | 2013-03-15 | 2016-10-11 | John Paul Morgan | Concentrated photovoltaic panel |
CN103390672B (en) * | 2013-08-02 | 2016-08-10 | 北京汉能创昱科技有限公司 | A kind of integrated thin-film solar battery component and preparation method thereof |
US9666733B2 (en) | 2013-09-04 | 2017-05-30 | Hyeon Woo AHN | Solar cell using printed circuit board |
JP2015050413A (en) * | 2013-09-04 | 2015-03-16 | アン,ヒョン・ウー | Solar cell utilizing pcb |
KR102054420B1 (en) * | 2014-05-27 | 2020-01-22 | 선파워 코포레이션 | Shingled solar cell module |
US20160087132A1 (en) * | 2014-09-19 | 2016-03-24 | Hamad Musabeh Ahmed Saif Alteneiji | Dynamic PV Module And Method Of Manufacturing |
JP6582187B2 (en) * | 2015-03-12 | 2019-10-02 | 松文産業株式会社 | Fiber structure with semiconductor element |
JP6027183B2 (en) * | 2015-05-13 | 2016-11-16 | アン,ヒョン・ウー | Solar cell using PCB |
KR102203801B1 (en) * | 2018-06-15 | 2021-01-18 | (주)공존에스앤티 | Window-type smart air purifying ventilator |
CH717208A2 (en) * | 2020-03-13 | 2021-09-15 | Urs Roethlin | Device for generating electrical energy, preferably using solar energy. |
JP7412806B2 (en) | 2020-06-25 | 2024-01-15 | スフェラーパワー株式会社 | Glass block with power generation function |
JP7200331B1 (en) | 2021-11-04 | 2023-01-06 | パシフィックコンサルタンツ株式会社 | Display device |
KR102588823B1 (en) * | 2023-01-06 | 2023-10-16 | (주)소프트피브이 | Solar power system generating high energy |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0866506B1 (en) * | 1996-10-09 | 2008-12-03 | Josuke Nakata | Semiconductor device |
DE69818449T2 (en) * | 1998-01-23 | 2004-07-08 | Nakata, Josuke, Joyo | DEVICE FOR OPTICAL ELECTROLYSIS |
US6278054B1 (en) * | 1998-05-28 | 2001-08-21 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
US6218606B1 (en) * | 1998-09-24 | 2001-04-17 | Sanyo Electric Co., Ltd. | Solar cell module for preventing reverse voltage to solar cells |
EP1646089B1 (en) | 2000-10-20 | 2016-06-29 | Sphelar Power Corporation | Light-emitting or light-receiving semiconductor module and method for making the same |
JP4201241B2 (en) * | 2001-05-17 | 2008-12-24 | 株式会社カネカ | Method for manufacturing integrated thin film photoelectric conversion module |
KR100561112B1 (en) | 2001-08-13 | 2006-03-15 | 죠스게 나가다 | Light-emitting or light-receiving semiconductor module and method of its manufacture |
AU2001277779B2 (en) * | 2001-08-13 | 2005-04-07 | Sphelar Power Corporation | Semiconductor device and method of its manufacture |
JP3904559B2 (en) | 2001-10-19 | 2007-04-11 | 仗祐 中田 | Light emitting or receiving semiconductor module and method for manufacturing the same |
ES2315367T3 (en) * | 2002-06-21 | 2009-04-01 | Kyosemi Corporation | LIGHT RECEIVER DEVICE OR LIGHT ISSUER AND ITS PRODUCTION METHOD. |
US20060185715A1 (en) * | 2003-07-25 | 2006-08-24 | Hammerbacher Milfred D | Photovoltaic apparatus including spherical semiconducting particles |
AU2003275663B2 (en) * | 2003-10-24 | 2008-04-24 | Sphelar Power Corporation | Light receiving or light emitting modular sheet and process for producing the same |
FR2863775B1 (en) * | 2003-12-15 | 2006-04-21 | Photowatt Internat Sa | PHOTOVOLTAIC MODULE WITH AN ELECTRONIC DEVICE IN THE LAMINATED STACK. |
EP1724841B1 (en) * | 2004-03-12 | 2016-11-16 | Sphelar Power Corporation | Multilayer solar cell |
JP5171001B2 (en) * | 2005-09-30 | 2013-03-27 | 三洋電機株式会社 | Method for manufacturing solar cell module, solar cell and solar cell module |
AU2008360293B2 (en) * | 2008-08-08 | 2014-08-14 | Sphelar Power Corporation | See-through type solar battery module |
JPWO2011096386A1 (en) * | 2010-02-08 | 2013-06-10 | 独立行政法人物質・材料研究機構 | Smart window using organic / metal hybrid polymer, smart window manufacturing method, and smart window system |
-
2008
- 2008-12-19 CA CA2747540A patent/CA2747540C/en not_active Expired - Fee Related
- 2008-12-19 EP EP08878882.3A patent/EP2372780A4/en not_active Withdrawn
- 2008-12-19 KR KR1020117016405A patent/KR101258889B1/en active IP Right Grant
- 2008-12-19 JP JP2010542751A patent/JP5017459B2/en not_active Expired - Fee Related
- 2008-12-19 MX MX2011006182A patent/MX2011006182A/en active IP Right Grant
- 2008-12-19 WO PCT/JP2008/003870 patent/WO2010070714A1/en active Application Filing
- 2008-12-19 AU AU2008365516A patent/AU2008365516B2/en not_active Ceased
- 2008-12-19 CN CN2008801321182A patent/CN102224598B/en not_active Expired - Fee Related
- 2008-12-19 US US12/998,898 patent/US9608149B2/en not_active Expired - Fee Related
-
2009
- 2009-10-06 TW TW098133854A patent/TWI484646B/en not_active IP Right Cessation
-
2011
- 2011-11-30 HK HK11112964.4A patent/HK1158818A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU2008365516B2 (en) | 2012-07-26 |
US20120222724A1 (en) | 2012-09-06 |
CA2747540C (en) | 2015-11-24 |
KR20110095952A (en) | 2011-08-25 |
MX2011006182A (en) | 2011-07-20 |
EP2372780A1 (en) | 2011-10-05 |
US9608149B2 (en) | 2017-03-28 |
AU2008365516A1 (en) | 2011-08-11 |
WO2010070714A1 (en) | 2010-06-24 |
JPWO2010070714A1 (en) | 2012-05-24 |
CN102224598A (en) | 2011-10-19 |
EP2372780A4 (en) | 2017-06-28 |
CA2747540A1 (en) | 2010-06-24 |
TW201027767A (en) | 2010-07-16 |
JP5017459B2 (en) | 2012-09-05 |
CN102224598B (en) | 2013-06-26 |
KR101258889B1 (en) | 2013-04-29 |
TWI484646B (en) | 2015-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20181219 |