HK1154119A1 - Substrate for power module, power module, and method for producing substrate for power module - Google Patents

Substrate for power module, power module, and method for producing substrate for power module

Info

Publication number
HK1154119A1
HK1154119A1 HK11108371.9A HK11108371A HK1154119A1 HK 1154119 A1 HK1154119 A1 HK 1154119A1 HK 11108371 A HK11108371 A HK 11108371A HK 1154119 A1 HK1154119 A1 HK 1154119A1
Authority
HK
Hong Kong
Prior art keywords
power module
substrate
metal plate
ceramics substrate
producing
Prior art date
Application number
HK11108371.9A
Other languages
English (en)
Inventor
Kuromitsu Yoshirou
Akiyama Kazuhiro
Kitahara Takeshi
Tonomura Hiroshi
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008129670A external-priority patent/JP4798171B2/ja
Priority claimed from JP2008129668A external-priority patent/JP4807378B2/ja
Priority claimed from JP2008129669A external-priority patent/JP4935753B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of HK1154119A1 publication Critical patent/HK1154119A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0212—Printed circuits or mounted components having integral heating means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/06—Arrangements of circuit components or wiring on supporting structure on insulating boards, e.g. wiring harnesses
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/08—Non-oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/121—Metallic interlayers based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/128—The active component for bonding being silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
HK11108371.9A 2008-05-16 2011-08-10 Substrate for power module, power module, and method for producing substrate for power module HK1154119A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008129670A JP4798171B2 (ja) 2008-05-16 2008-05-16 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP2008129668A JP4807378B2 (ja) 2008-05-16 2008-05-16 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP2008129669A JP4935753B2 (ja) 2008-05-16 2008-05-16 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
PCT/JP2009/059089 WO2009139472A1 (ja) 2008-05-16 2009-05-15 パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法

Publications (1)

Publication Number Publication Date
HK1154119A1 true HK1154119A1 (en) 2012-04-20

Family

ID=41318830

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11108371.9A HK1154119A1 (en) 2008-05-16 2011-08-10 Substrate for power module, power module, and method for producing substrate for power module

Country Status (6)

Country Link
US (3) US8609993B2 (xx)
EP (1) EP2282334B1 (xx)
KR (1) KR20110015544A (xx)
CN (1) CN102027592B (xx)
HK (1) HK1154119A1 (xx)
WO (1) WO2009139472A1 (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130097481A (ko) * 2012-02-24 2013-09-03 삼성전자주식회사 인쇄회로기판(ｐｃｂ) 및 그 ｐｃｂ를 포함한 메모리 모듈
JP6056446B2 (ja) * 2012-12-17 2017-01-11 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
US9585241B2 (en) * 2013-09-24 2017-02-28 Infineon Technologies Ag Substrate, chip arrangement, and method for manufacturing the same
US9969654B2 (en) * 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
EP3106447B1 (en) * 2014-02-12 2019-04-24 Mitsubishi Materials Corporation Copper-ceramic bonded body and power module substrate
DE102014219759A1 (de) * 2014-09-30 2016-03-31 Siemens Aktiengesellschaft Leistungsmodul
JP6729224B2 (ja) 2015-11-26 2020-07-22 三菱マテリアル株式会社 セラミックス／アルミニウム接合体、絶縁回路基板、パワーモジュール、ｌｅｄモジュール、熱電モジュール
JP6922918B2 (ja) * 2016-08-22 2021-08-18 株式会社村田製作所 セラミック基板及び電子部品内蔵モジュール
JP7127641B2 (ja) * 2017-05-11 2022-08-30 住友電気工業株式会社 半導体装置
JP6848008B2 (ja) * 2019-06-06 2021-03-24 マレリ株式会社 接合方法
US11495519B2 (en) 2019-06-07 2022-11-08 Dana Canada Corporation Apparatus for thermal management of electronic components
CN114303237A (zh) * 2019-08-29 2022-04-08 京瓷株式会社 电路基板及功率模块

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03234045A (ja) 1990-02-09 1991-10-18 Toshiba Corp 窒化アルミニウム基板およびこれを用いた半導体モジュール
US5100048A (en) * 1991-01-25 1992-03-31 Alcan International Limited Method of brazing aluminum
JP3063299B2 (ja) * 1991-03-20 2000-07-12 三菱マテリアル株式会社 半導体装置実装用基板
US5213877A (en) * 1991-05-02 1993-05-25 Mitsubishi Materials Corporation Ceramic substrate used for fabricating electric or electronic circuit
US6033787A (en) * 1996-08-22 2000-03-07 Mitsubishi Materials Corporation Ceramic circuit board with heat sink
JP3171234B2 (ja) * 1997-03-26 2001-05-28 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JP2002036424A (ja) 2000-04-19 2002-02-05 Hitachi Metals Ltd 積層箔及びそれを用いた配線板並びに積層箔の製造方法
US7129979B1 (en) * 2000-04-28 2006-10-31 Eastman Kodak Company Image sensor pixel for global electronic shuttering
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
US7069645B2 (en) * 2001-03-29 2006-07-04 Ngk Insulators, Ltd. Method for producing a circuit board
US20030039856A1 (en) * 2001-08-15 2003-02-27 Gillispie Bryan A. Product and method of brazing using kinetic sprayed coatings
US7270885B1 (en) * 2001-11-14 2007-09-18 Marlene Rossing, legal representative Method for brazing ceramic-containing bodies, and articles made thereby
US20060102696A1 (en) * 2001-11-21 2006-05-18 Graham Michael E Layered products for fluxless brazing of substrates
JP3922538B2 (ja) 2002-04-18 2007-05-30 日立金属株式会社 セラミックス回路基板の製造方法
JP4241397B2 (ja) 2002-04-19 2009-03-18 三菱マテリアル株式会社 回路基板の製造方法
JP4055596B2 (ja) * 2003-02-05 2008-03-05 日本発条株式会社 複合材
JP2006045040A (ja) 2004-08-09 2006-02-16 Nhk Spring Co Ltd Ｓｉ系セラミックスを有す複合材およびその製造方法。
WO2007026547A1 (ja) * 2005-08-29 2007-03-08 Hitachi Metals, Ltd. 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法
US8273993B2 (en) * 2006-03-08 2012-09-25 Kabushiki Kaisha Toshiba Electronic component module
US7755185B2 (en) * 2006-09-29 2010-07-13 Infineon Technologies Ag Arrangement for cooling a power semiconductor module
JP4629016B2 (ja) 2006-10-27 2011-02-09 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法並びにパワーモジュール
JP2008129670A (ja) 2006-11-17 2008-06-05 Oki Electric Ind Co Ltd 現金自動預払機およびこれを用いたコンテンツ配信方法およびシステム
JP2008129669A (ja) 2006-11-17 2008-06-05 Meidensha Corp ハードウェア異常記録装置及びハードウェア異常記録方法
JP2008129668A (ja) 2006-11-17 2008-06-05 Meidensha Corp Ｃｐｕの割込み制御方式
JP5056340B2 (ja) 2007-10-22 2012-10-24 トヨタ自動車株式会社 半導体モジュールの冷却装置

Also Published As

Publication number Publication date
WO2009139472A1 (ja) 2009-11-19
US20140078684A1 (en) 2014-03-20
US9101063B2 (en) 2015-08-04
US20110067906A1 (en) 2011-03-24
US9095062B2 (en) 2015-07-28
EP2282334B1 (en) 2020-08-19
KR20110015544A (ko) 2011-02-16
EP2282334A1 (en) 2011-02-09
US8609993B2 (en) 2013-12-17
CN102027592B (zh) 2013-08-07
EP2282334A4 (en) 2014-11-19
US20140071633A1 (en) 2014-03-13
CN102027592A (zh) 2011-04-20

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