HK1149366A1 - Multiband semiconductor compositions for photovoltaic devices - Google Patents

Multiband semiconductor compositions for photovoltaic devices

Info

Publication number
HK1149366A1
HK1149366A1 HK11103441.6A HK11103441A HK1149366A1 HK 1149366 A1 HK1149366 A1 HK 1149366A1 HK 11103441 A HK11103441 A HK 11103441A HK 1149366 A1 HK1149366 A1 HK 1149366A1
Authority
HK
Hong Kong
Prior art keywords
photovoltaic devices
semiconductor compositions
multiband semiconductor
multiband
compositions
Prior art date
Application number
HK11103441.6A
Other languages
English (en)
Inventor
Wladyslaw Walukiewicz
Kin Man Yu
Junqiao Wu
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Publication of HK1149366A1 publication Critical patent/HK1149366A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
HK11103441.6A 2003-12-01 2011-04-06 Multiband semiconductor compositions for photovoltaic devices HK1149366A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52621003P 2003-12-01 2003-12-01

Publications (1)

Publication Number Publication Date
HK1149366A1 true HK1149366A1 (en) 2011-09-30

Family

ID=34652430

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11103441.6A HK1149366A1 (en) 2003-12-01 2011-04-06 Multiband semiconductor compositions for photovoltaic devices

Country Status (5)

Country Link
EP (1) EP1695388A2 (de)
JP (1) JP2007535129A (de)
CN (3) CN102738259A (de)
HK (1) HK1149366A1 (de)
WO (1) WO2005055285A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005047907A1 (de) * 2005-10-06 2007-04-12 Basf Ag Photovoltaische Zelle mit einem darin enthaltenen photovoltaisch aktiven Halbleitermaterial
EP1972014A1 (de) * 2006-01-03 2008-09-24 Basf Se Photovoltaisch aktives halbleitermaterial und photovoltaische zelle
JP4868855B2 (ja) * 2006-01-12 2012-02-01 シャープ株式会社 多接合型太陽電池セル
ES2293862B2 (es) 2007-10-17 2009-02-16 Universidad Politecnica De Madrid Celula solar de banda intermedia de puntos cuanticos con acoplamiento optimo de la luz por difraccion.
EP2250664A4 (de) * 2008-01-28 2013-07-17 Amit Goyal Ausgerichtete auf halbleitern basierende grossflächige flexible elektronische anordnungen
US20110303292A1 (en) 2009-02-20 2011-12-15 Saki Sonoda Light-absorbing material and photoelectric conversion element using the same
CN102792457B (zh) 2010-03-18 2016-04-13 国立大学法人京都工芸纤维大学 光吸收材料及使用其的光电转换元件
CN102339893A (zh) * 2010-07-23 2012-02-01 上海凯世通半导体有限公司 太阳能晶片的制备方法
CN102339894A (zh) * 2010-07-23 2012-02-01 上海凯世通半导体有限公司 太阳能电池的制备方法
CN104200000B (zh) * 2014-07-23 2017-09-26 江苏大学 基于Al‑N共掺的ZnO金属陶瓷薄膜P型转化设计方法

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
FR2569427B1 (fr) * 1984-08-23 1986-11-14 Commissariat Energie Atomique Procede et dispositif de depot sur un substrat d'une couche mince d'un compose comportant au moins un constituant cationique et au moins un constituant anionique
US5432374A (en) * 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
JP2974107B2 (ja) * 1993-09-28 1999-11-08 矢崎総業株式会社 太陽電池吸収層の製造方法
JP2922825B2 (ja) * 1995-08-14 1999-07-26 松下電器産業株式会社 太陽電池及びその製造方法
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
US6256331B1 (en) * 1997-08-08 2001-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
JPH11243186A (ja) * 1998-02-26 1999-09-07 Fujitsu Ltd 半導体装置の製造方法
CN1168147C (zh) * 1999-01-14 2004-09-22 松下电器产业株式会社 半导体结晶的制造方法
JP3689615B2 (ja) * 2000-03-29 2005-08-31 キヤノン株式会社 立体形状を有する光電融合デバイス
JP2002118328A (ja) * 2000-10-10 2002-04-19 Ricoh Co Ltd 半導体発光素子
CN1350050A (zh) * 2000-10-19 2002-05-22 中国科学院长春光学精密机械与物理研究所 用于有机薄膜光伏器件的稀土配合物材料
JP2002217497A (ja) * 2001-01-22 2002-08-02 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子
JP3976543B2 (ja) * 2001-10-29 2007-09-19 日鉱金属株式会社 ＺｎＴｅ系化合物半導体の製造方法およびＺｎＴｅ系化合物半導体並びに半導体装置
CN100360721C (zh) * 2001-04-04 2008-01-09 日矿金属株式会社 ZnTe系化合物半导体单晶的制造方法和ZnTe系化合物半导体单晶及半导体器件
CN1152154C (zh) * 2001-05-11 2004-06-02 中国科学院上海冶金研究所 制备锑化镓基半导体器件用的化学腐蚀液
WO2003052836A1 (en) * 2001-12-14 2003-06-26 Midwest Research Institute Multi-junction solar cell device

Also Published As

Publication number Publication date
CN101416321A (zh) 2009-04-22
JP2007535129A (ja) 2007-11-29
CN101853889B (zh) 2012-07-04
EP1695388A2 (de) 2006-08-30
CN101853889A (zh) 2010-10-06
CN102738259A (zh) 2012-10-17
WO2005055285A2 (en) 2005-06-16
WO2005055285A3 (en) 2013-01-10

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171129