HK1105146A1 - Projection exposure apparatus - Google Patents

Projection exposure apparatus

Info

Publication number
HK1105146A1
HK1105146A1 HK07110295.4A HK07110295A HK1105146A1 HK 1105146 A1 HK1105146 A1 HK 1105146A1 HK 07110295 A HK07110295 A HK 07110295A HK 1105146 A1 HK1105146 A1 HK 1105146A1
Authority
HK
Hong Kong
Prior art keywords
aperture
numerical aperture
point
optical system
light reaching
Prior art date
Application number
HK07110295.4A
Other languages
English (en)
Inventor
Hideki Komatsuda
Tomowaki Takahashi
Masayuki Suzuki
Original Assignee
Nikon Corp
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Canon Kk filed Critical Nikon Corp
Publication of HK1105146A1 publication Critical patent/HK1105146A1/xx

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Push-Button Switches (AREA)
  • Photographic Developing Apparatuses (AREA)
  • Liquid Crystal (AREA)
HK07110295.4A 2004-06-23 2007-09-21 Projection exposure apparatus HK1105146A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004184657 2004-06-23
PCT/JP2005/011411 WO2006001291A1 (fr) 2004-06-23 2005-06-22 Système optique de projection, dispositif d'exposition et méthode d'exposition

Publications (1)

Publication Number Publication Date
HK1105146A1 true HK1105146A1 (en) 2008-02-01

Family

ID=35781757

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07110295.4A HK1105146A1 (en) 2004-06-23 2007-09-21 Projection exposure apparatus

Country Status (9)

Country Link
EP (1) EP1768172B1 (fr)
JP (1) JP4711437B2 (fr)
KR (1) KR100918335B1 (fr)
CN (1) CN1954406B (fr)
AT (1) ATE457522T1 (fr)
DE (1) DE602005019302D1 (fr)
HK (1) HK1105146A1 (fr)
TW (1) TWI372262B (fr)
WO (1) WO2006001291A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602006014368D1 (de) * 2005-03-08 2010-07-01 Zeiss Carl Smt Ag Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende
CN101976018B (zh) * 2006-02-16 2013-01-30 株式会社尼康 光罩及其制造方法
US8208127B2 (en) 2007-07-16 2012-06-26 Carl Zeiss Smt Gmbh Combination stop for catoptric projection arrangement
JP5620379B2 (ja) * 2008-07-31 2014-11-05 コーニング インコーポレイテッド スポットが調整される能動スポットアレイリソグラフィ用投影機システム
WO2011095209A1 (fr) * 2010-02-03 2011-08-11 Carl Zeiss Smt Gmbh Installation d'exposition par projection pour microlithographie
KR101505256B1 (ko) 2010-04-23 2015-03-30 칼 짜이스 에스엠티 게엠베하 리소그래픽 시스템의 광학 소자의 조작을 포함하는 리소그래픽 시스템의 작동 방법
WO2012137699A1 (fr) * 2011-04-05 2012-10-11 株式会社ニコン Appareil optique, appareil d'exposition, et procédé de fabrication d'un dispositif
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik
DE102014223811B4 (de) 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
EP0951054B1 (fr) * 1996-11-28 2008-08-13 Nikon Corporation Dispositif d'alignement et procede d'exposition
JP2001110709A (ja) * 1999-10-08 2001-04-20 Nikon Corp 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。
EP1093021A3 (fr) * 1999-10-15 2004-06-30 Nikon Corporation Système d'exposition par projection, ainsi qu'un appareil et des méthodes utilisant ce système
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
JP3720788B2 (ja) 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
JP2004158786A (ja) * 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
WO2004046771A1 (fr) * 2002-11-21 2004-06-03 Carl Zeiss Smt Ag Lentille de projection dotee d'un diaphragme de forme non circulaire pour microlithographie

Also Published As

Publication number Publication date
JP4711437B2 (ja) 2011-06-29
JPWO2006001291A1 (ja) 2008-04-17
TWI372262B (en) 2012-09-11
DE602005019302D1 (de) 2010-03-25
CN1954406A (zh) 2007-04-25
EP1768172B1 (fr) 2010-02-10
TW200604566A (en) 2006-02-01
KR20070043979A (ko) 2007-04-26
CN1954406B (zh) 2011-07-06
ATE457522T1 (de) 2010-02-15
EP1768172A1 (fr) 2007-03-28
KR100918335B1 (ko) 2009-09-22
WO2006001291A1 (fr) 2006-01-05
EP1768172A4 (fr) 2008-03-05

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Legal Events

Date Code Title Description
AM Amended specification (according sect 146 of patent law)

Free format text: CORRECTION OF THE NAME OF THE INVENTOR FROM MATSUDA, HIDEKI TO KOMATSUDA, HIDEKI.

Effective date: 20100709