TWI372262B - Optical projection system, exposuring device, and exposuring method - Google Patents

Optical projection system, exposuring device, and exposuring method

Info

Publication number
TWI372262B
TWI372262B TW094120735A TW94120735A TWI372262B TW I372262 B TWI372262 B TW I372262B TW 094120735 A TW094120735 A TW 094120735A TW 94120735 A TW94120735 A TW 94120735A TW I372262 B TWI372262 B TW I372262B
Authority
TW
Taiwan
Prior art keywords
aperture
exposuring
numerical aperture
point
optical system
Prior art date
Application number
TW094120735A
Other languages
English (en)
Other versions
TW200604566A (en
Inventor
Hideki Komatsuda
Tomowaki Takahashi
Masayuki Suzuki
Original Assignee
Nikon Corp
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Canon Kk filed Critical Nikon Corp
Publication of TW200604566A publication Critical patent/TW200604566A/zh
Application granted granted Critical
Publication of TWI372262B publication Critical patent/TWI372262B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Push-Button Switches (AREA)
  • Photographic Developing Apparatuses (AREA)
  • Liquid Crystal (AREA)
TW094120735A 2004-06-23 2005-06-22 Optical projection system, exposuring device, and exposuring method TWI372262B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004184657 2004-06-23

Publications (2)

Publication Number Publication Date
TW200604566A TW200604566A (en) 2006-02-01
TWI372262B true TWI372262B (en) 2012-09-11

Family

ID=35781757

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120735A TWI372262B (en) 2004-06-23 2005-06-22 Optical projection system, exposuring device, and exposuring method

Country Status (9)

Country Link
EP (1) EP1768172B1 (zh)
JP (1) JP4711437B2 (zh)
KR (1) KR100918335B1 (zh)
CN (1) CN1954406B (zh)
AT (1) ATE457522T1 (zh)
DE (1) DE602005019302D1 (zh)
HK (1) HK1105146A1 (zh)
TW (1) TWI372262B (zh)
WO (1) WO2006001291A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008533709A (ja) * 2005-03-08 2008-08-21 カール ツァイス エスエムテー アーゲー 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系
CN101385123B (zh) * 2006-02-16 2010-12-15 株式会社尼康 投影光学系统、曝光装置及方法、光罩及显示器的制造方法
US8208127B2 (en) 2007-07-16 2012-06-26 Carl Zeiss Smt Gmbh Combination stop for catoptric projection arrangement
CN102112926B (zh) * 2008-07-31 2014-04-09 康宁股份有限公司 具有经调节的斑点的活动斑点阵列平版印刷投影系统
WO2011095209A1 (de) * 2010-02-03 2011-08-11 Carl Zeiss Smt Gmbh Mikrolithographische projektionsbelichtungsanlage
WO2011141046A1 (en) * 2010-04-23 2011-11-17 Carl Zeiss Smt Gmbh Process of operating a lithographic system comprising a manipulation of an optical element of the lithographic system
WO2012137699A1 (ja) * 2011-04-05 2012-10-11 株式会社ニコン 光学装置、露光装置、およびデバイス製造方法
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik
DE102014223811B4 (de) 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
CN1144263C (zh) * 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
JP2001110709A (ja) * 1999-10-08 2001-04-20 Nikon Corp 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
EP1093021A3 (en) * 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
JP3720788B2 (ja) * 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
JP2004158786A (ja) * 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
JP2006507672A (ja) 2002-11-21 2006-03-02 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィ用の投影レンズ

Also Published As

Publication number Publication date
ATE457522T1 (de) 2010-02-15
CN1954406B (zh) 2011-07-06
JP4711437B2 (ja) 2011-06-29
EP1768172A4 (en) 2008-03-05
KR100918335B1 (ko) 2009-09-22
JPWO2006001291A1 (ja) 2008-04-17
DE602005019302D1 (de) 2010-03-25
EP1768172B1 (en) 2010-02-10
EP1768172A1 (en) 2007-03-28
HK1105146A1 (en) 2008-02-01
CN1954406A (zh) 2007-04-25
KR20070043979A (ko) 2007-04-26
WO2006001291A1 (ja) 2006-01-05
TW200604566A (en) 2006-02-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees