WO2011095209A1 - Installation d'exposition par projection pour microlithographie - Google Patents

Installation d'exposition par projection pour microlithographie Download PDF

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Publication number
WO2011095209A1
WO2011095209A1 PCT/EP2010/051303 EP2010051303W WO2011095209A1 WO 2011095209 A1 WO2011095209 A1 WO 2011095209A1 EP 2010051303 W EP2010051303 W EP 2010051303W WO 2011095209 A1 WO2011095209 A1 WO 2011095209A1
Authority
WO
WIPO (PCT)
Prior art keywords
pupil
exposure apparatus
projection exposure
microlithographic
projection
Prior art date
Application number
PCT/EP2010/051303
Other languages
German (de)
English (en)
Inventor
Aksel GÖHNERMEIER
Damian Fiolka
Toralf Gruner
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Priority to PCT/EP2010/051303 priority Critical patent/WO2011095209A1/fr
Publication of WO2011095209A1 publication Critical patent/WO2011095209A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Definitions

  • the invention relates to a microlithographic projection exposure apparatus.
  • Microlithography is used to fabricate microstructured devices such as integrated circuits or LCDs.
  • the microlithography process is carried out in a so-called projection exposure apparatus which has an illumination device and a projection objective.
  • EUV projected projection lenses i. at wavelengths of e.g. about 13 nm or about 7 nm, mirrors are used as optical components for the imaging process, due to the lack of availability of suitable translucent refractive materials.
  • central obscuration i.e.
  • the term "pupil plane” is understood in accordance with the usual terminology to mean a plane which represents the Fourier-transformed plane to a field plane (ie approximately the image plane or an intermediate image plane) in the field plane, identical angles in the pupil plane, so that in a pupil plane in each case principal rays, which impinge in a field plane at the same angle, cross each other.
  • a projection exposure method in which a pupil filter with a first pupil function is exchanged between successive exposures for a pupil filter with a second pupil function, at least one of these pupil functions having an asymmetric transmission distribution.
  • a microlithographic projection exposure apparatus which comprises a polarization control means and means for changing the direction of the opening area of a slit filter in synchronism with the polarization direction change set by the polarization control means.
  • the invention relates to a microlithographic projection exposure apparatus having an illumination device and a projection objective, wherein the illumination device is operated during operation of the projection exposure apparatus. ge illuminates an object plane of the projection lens and the projection lens images this object plane onto an image plane,
  • the projection lens has at least one pupil, wherein at least one boundary line of this pupil has a different geometry from a circular shape.
  • the at least one boundary line may be an outer boundary line or else an inner boundary line of the pupil.
  • both the inner boundary line and the outer boundary line can have a geometry deviating from a circular shape.
  • the maximum deviation or the maximum distance from a best-fitting circular line can be used, this best-fitting circular line can be determined by the known method of least squares and wherein the distance in the radial direction relative to this circle is determined.
  • This maximum deviation from the best fitting circular line in the radial direction according to the invention is preferably at least 1%, in particular at least 2%, and more particularly at least 5%.
  • the pupil can be the entrance pupil, the exit pupil or the system pupil.
  • a pupil of an imaging optic generally refers to all images of the aperture stop that delimits the imaging beam path.
  • the levels in which these images come to rest are called pupil levels.
  • the planes that approximately correspond to these images are also generalized as pupil planes.
  • the plane of the aperture stop itself is also referred to as the pupil plane. If the aperture diaphragm is not flat, then As with the images of the aperture diaphragm, the plane closest to the aperture diaphragm is called the pupil plane.
  • the entrance pupil of the imaging optics is understood to be the image of the aperature diaphragm which is formed when the aperture diaphragm is imaged through the part of the imaging optics which lies between the object plane and the aperture diaphragm.
  • the exit pupil is the image of the aperture diaphragm which results when the aperture diaphragm is imaged through the part of the imaging optics which lies between the image plane and the aperture diaphragm.
  • the entrance pupil is a virtual image of the aperture diaphragm, that is to say that the entrance pupil plane lies in front of the object field, this is called a negative focal distance of the entrance pupil.
  • the main rays to all object field points are as if they came from a point in front of the imaging path.
  • the principal ray to each object point is defined as the connecting ray between the object point and the center of the entrance pupil. With a negative intercept of the entrance pupil, the main rays to all object points thus have a divergent ray path at the object field.
  • a shadowed or obscured exit pupil at a pixel is present if this pixel can not be reached by all the rays emanating from the associated object point within the aperture. So there is an area within the exit pupil that can not reach any rays from this pixel. This area is called pupil obscuration.
  • a pupil may also be described as the region in the imaging optical path of the imaging optical system in which individual beams emanating from the object field points intersect, which are associated with the same illumination angle relative to the main beams emanating from these object field points.
  • the plane of the pupil can be designated as the plane in which the intersections of the individual rays lie according to the alternative pupil definition or the spatial distribution of these Intersections, which need not necessarily be exactly in one plane, come closest.
  • the present invention encompasses all solutions in which at least one pupil in the sense of at least one of the present definitions has a boundary line with a geometry deviating from a circular shape (in the sense of the above criterion).
  • the pupil has at least one boundary line with a geometry deviating from a circular shape (in the following, such a pupil is also referred to for short as a "non-circular pupil")
  • a geometrically advantageous situation are created, which allows even at larger apertures a "pass" the light at the relevant, arranged in a pupil plane or in the vicinity mirror, since this mirror in the remaining (ie not counting to the transmitting area ) Area may have a mirror breakthrough, by there eg has a hole or by the mirror is cut off there.
  • the pupil according to preferred embodiments of the invention a cross-shaped, rectangular or strip-shaped or a substantially hourglass-shaped geometry (ie, a central tapered portion between two outer, relatively wider sections).
  • the use of linearly polarized light in accordance with the invention in combination with the non-circular pupil also has the result that, especially in the case of a non-circular, eg rectangular, strip-shaped or cruciform transmitting region in conjunction with a defined direction of polarization of the light in FIG With regard to the vector effect, it is possible to achieve advantageous polarization distributions.
  • Rectangular or striped pupil Another property of e.g. Rectangular or striped pupil is that dense line structures (i.e., high spatial frequency or narrow line spacing structures) can only be transmitted in one direction due to the required comparatively large diffraction angles. According to the invention, however, this "disadvantage" is deliberately accepted, which is based on the consideration that the imaging of high spatial frequency structures running in the corresponding vertical direction can also be achieved using the same, non-circular pupil only the (eg vertical) line grid must be rotated so that the lines to be imaged are horizontal with respect to the projection exposure machine ("machine system"), whereby at the same time the wafer is also rotated and the lithography process is carried out so that the "disadvantage" described above is simply reversed. can be done.
  • machine system projection exposure machine
  • Another important advantage of using light with a defined direction of polarization preference is the design of the highly reflective HR layers on the mirrors, since compromises in layer optimization, which conventionally apply both with regard to p-polarized light and with respect to s-polarized light has to be done, are no longer necessary. In other words, one degree of freedom is used in layer optimization. because the HR layers only have to be optimized for a defined polarization direction.
  • the pupil deviating from the circular shape and created according to the invention is not necessarily achieved by a non-circular diaphragm, but rather by a beam cone designed in a defined manner or resulting from the system. Compared to a system with a round pupil shape, this also creates additional design options in which e.g. two pupil planes are arranged side by side and this summing only a little more beam cone space as a system with a single, but approximately shaped pupil.
  • the reticle or mask and the wafer are designed to be rotatable relative to the projection objective.
  • the area exposed in one and the same exposure step ("the") preferably has a square geometry.
  • a (“physical”) aperture stop may also be provided for adjusting the non-circular pupil, whereby the shape and size of the pupil may be variable, in particular by variable design of the aperture stop
  • a possible embodiment consists in the arrangement of four cutting edges displaceable perpendicularly to their straight boundary, which together form a rectangle, in which case a centered rectangle is preferred, so that opposite cutting edges are preferred
  • the non-circular pupil has a cross-shaped geometry
  • the cross-shaped geometry has the advantage that the above-described rotation of reticle and wafer in relation to the pro jection lens is no longer required, whereby the mechanical complexity of the structure is reduced.
  • the pupil has a substantially hourglass-shaped geometry.
  • hourglass-shaped geometry is understood as meaning a geometry with a tapered, ie relatively narrow central region between two outer, relatively broader regions This refinement enables a more moderate refinement of those structural features which are perpendicular to the preferred structure orientation In this case, if a dipole illumination setting is used, the illumination poles are located near the pupil edge.
  • Figures 1 and 2 are schematic representations for explaining the effect of different polarization distributions in a rectangular or strip-shaped area of the pupil plane;
  • Figure 3 is a schematic diagram illustrating the provision of additional design options enabled by the present invention
  • Figures 4 and 5 are schematic representations of non-circular pupil shapes for explaining further embodiments of the present invention
  • Figure 6 is a schematic representation of a designed for EUV microlithographic projection exposure apparatus.
  • Fig. 1 shows a so-called radial polarization distribution, in which the direction of the electric field strength vector is oriented parallel to the radius directed onto the optical axis of the system (in the z-direction in the drawn coordinate system), wherein the direction of oscillation of the electric field strength vector is represented by double arrows is.
  • Fig. 2 shows a linear polarization distribution 200 with a constant, in the drawn coordinate system in the y direction extending polarization preferred direction, wherein the direction of vibration of the electric field strength vector is again represented by double arrows.
  • the non-circular pupil used in accordance with the invention now has a rectangular or strip-shaped geometry, this pupil, ie the transmissive region of the pupil plane, being denoted by 10 in FIG. 1 and 210 in FIG , 2, due to the set polarization distribution within this pupil 210, there is a so-called "quasi-tangential polarization distribution" in which the oscillation direction of the electric field strength vector is oriented at least approximately perpendicular to the radius directed towards the optical axis extending in the z direction
  • This quasitangential polarization distribution succeeds on wafer level to avoid a negative influence of the already explained vector effect on the imaging result of the lithographic process, even at higher numerical apertures (of eg NA> 0.4).
  • FIG. 3 illustrates how, due to the non-circular configuration of the pupil according to the invention (in the exemplary embodiment, a strip or rectangular shape is again selected), a geometrically advantageous situation is created which enables the light to pass through optically unused areas outside the optical axis, without having a central axis
  • FIG. 4 shows a pupil 410 with a cross-shaped geometry, which includes symmetrical to the optical axis extending in the z-direction in each case rectangular or strip-shaped sections 41 1-414.
  • 5 shows a "hourglass-shaped" pupil 510 having a central region 51 1 which tapers relative to the two adjacent outer regions 512 and 513.
  • remaining ("white") areas available to provide there on about a mirror disposed in close proximity to the pupil plane in question mirror permitting the passage of light (hole or the like).
  • 6 shows a schematic illustration of a microlithographic projection exposure apparatus 600 designed for operation in the EUV, in which the present invention can be implemented.
  • the projection exposure apparatus 600 has an illumination device 601 and a projection objective 602.
  • the illumination device 601 comprises a collector 605, an NEN spectral filter 606, a diaphragm 607 in which an intermediate image IMI is generated, a first optical raster element 608 and a second optical raster element 609 from which the light impinges on further optical elements 610-612 on an object plane arranged in an object field OP.
  • the light emanating from the object field enters the projection lens 602.
  • the projection objective 602 has mirrors M1-M8 in order to transmit the mask structure of a reticle arranged in the object plane OP to the photosensitive coating of a wafer W arranged in the image plane IP.
  • an aperture diaphragm B is arranged in the region of the second mirror M2.
  • a non-circular pupil can be set in the projection exposure apparatus 600.
  • the aperture diaphragm B present in the region of the second mirror M2 can be designed such that it adjusts a non-circular pupil as described above.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)

Abstract

L'invention concerne une installation d'exposition par projection pour microlithographie (600) équipée d'un dispositif d'exposition (601) et d'un objectif de projection (602). Le dispositif d'exposition (601) éclaire, lorsque l'installation d'exposition (602) est en service, un plan objet OP de l'objectif de projection et l'objectif de projection reproduit ce plan objet sur un plan image (W), l'éclairement du plan objet s'effectuant par de la lumière polarisée linéairement, dont la longueur d'onde est inférieure à 15 nanomètres (nm), et l'objectif de projection présentant au moins une pupille (110, 210, 310, 410, 510), dont au moins une ligne la limitant présente une géométrie s'écartant de la forme circulaire.
PCT/EP2010/051303 2010-02-03 2010-02-03 Installation d'exposition par projection pour microlithographie WO2011095209A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2010/051303 WO2011095209A1 (fr) 2010-02-03 2010-02-03 Installation d'exposition par projection pour microlithographie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2010/051303 WO2011095209A1 (fr) 2010-02-03 2010-02-03 Installation d'exposition par projection pour microlithographie

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WO2011095209A1 true WO2011095209A1 (fr) 2011-08-11

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012218558A1 (de) 2012-10-11 2013-08-29 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
DE102012208793A1 (de) 2012-05-25 2013-11-28 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
DE102017215664A1 (de) * 2017-09-06 2019-03-07 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
US11650510B2 (en) 2019-06-19 2023-05-16 Carl Zeiss Smt Gmbh Projection optical unit for microlithography and method for producing a structured component

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673103A (en) 1993-09-24 1997-09-30 Kabushiki Kaisha Toshiba Exposure apparatus and method
US5863712A (en) 1996-01-16 1999-01-26 Hitachi, Ltd. Pattern forming method, projection exposure system, and semiconductor device fabrication method
US20010003480A1 (en) * 1999-12-06 2001-06-14 Ryuk Heung-Jo Apertures and illuminating apparatus including aperture openings dimensioned to compensate for directional critical dimension differences
WO2004046771A1 (fr) 2002-11-21 2004-06-03 Carl Zeiss Smt Ag Lentille de projection dotee d'un diaphragme de forme non circulaire pour microlithographie
WO2006117122A1 (fr) 2005-05-03 2006-11-09 Carl Zeiss Smt Ag Appareil d'exposition microlithographique utilisant une lumiere polarisee et systeme de projection microlithographique equipe de miroirs concaves primaire et secondaire
EP1768172A1 (fr) * 2004-06-23 2007-03-28 Nikon Corporation Système optique de projection, dispositif d'exposition et méthode d'exposition
JP2007305821A (ja) 2006-05-12 2007-11-22 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673103A (en) 1993-09-24 1997-09-30 Kabushiki Kaisha Toshiba Exposure apparatus and method
US5863712A (en) 1996-01-16 1999-01-26 Hitachi, Ltd. Pattern forming method, projection exposure system, and semiconductor device fabrication method
US20010003480A1 (en) * 1999-12-06 2001-06-14 Ryuk Heung-Jo Apertures and illuminating apparatus including aperture openings dimensioned to compensate for directional critical dimension differences
WO2004046771A1 (fr) 2002-11-21 2004-06-03 Carl Zeiss Smt Ag Lentille de projection dotee d'un diaphragme de forme non circulaire pour microlithographie
EP1768172A1 (fr) * 2004-06-23 2007-03-28 Nikon Corporation Système optique de projection, dispositif d'exposition et méthode d'exposition
WO2006117122A1 (fr) 2005-05-03 2006-11-09 Carl Zeiss Smt Ag Appareil d'exposition microlithographique utilisant une lumiere polarisee et systeme de projection microlithographique equipe de miroirs concaves primaire et secondaire
JP2007305821A (ja) 2006-05-12 2007-11-22 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012208793A1 (de) 2012-05-25 2013-11-28 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
WO2013174686A1 (fr) 2012-05-25 2013-11-28 Carl Zeiss Smt Gmbh Système d'imagerie optique et installation d'exposition par projection
US10139734B2 (en) 2012-05-25 2018-11-27 Carl Zeiss Smt Gmbh Imaging optical unit and projection exposure apparatus for projection lithography, having such imaging optical unit
DE102012218558A1 (de) 2012-10-11 2013-08-29 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
DE102017215664A1 (de) * 2017-09-06 2019-03-07 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
WO2019048200A1 (fr) * 2017-09-06 2019-03-14 Carl Zeiss Smt Gmbh Système optique conçu pour un dispositif de lithographie par projection
US11650510B2 (en) 2019-06-19 2023-05-16 Carl Zeiss Smt Gmbh Projection optical unit for microlithography and method for producing a structured component

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