HK1092941A1 - High voltage sensor device and method therefor - Google Patents

High voltage sensor device and method therefor

Info

Publication number
HK1092941A1
HK1092941A1 HK06113311.9A HK06113311A HK1092941A1 HK 1092941 A1 HK1092941 A1 HK 1092941A1 HK 06113311 A HK06113311 A HK 06113311A HK 1092941 A1 HK1092941 A1 HK 1092941A1
Authority
HK
Hong Kong
Prior art keywords
high voltage
sensor device
voltage sensor
method therefor
therefor
Prior art date
Application number
HK06113311.9A
Other languages
English (en)
Inventor
W Hall W Jefferson
Tanvir Quddus T Mohammed
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of HK1092941A1 publication Critical patent/HK1092941A1/xx

Links

Classifications

    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J33/00—Camp cooking devices without integral heating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/36—Means for starting or stopping converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J36/00—Parts, details or accessories of cooking-vessels
    • A47J36/24—Warming devices
    • A47J36/26—Devices for warming vessels containing drinks or food, especially by means of burners Warming devices with a burner, e.g. using gasoline; Travelling cookers, e.g. using petroleum or gasoline with one burner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0016—Control circuits providing compensation of output voltage deviations using feedforward of disturbance parameters
    • H02M1/0022—Control circuits providing compensation of output voltage deviations using feedforward of disturbance parameters the disturbance parameters being input voltage fluctuations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Food Science & Technology (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Fluid Pressure (AREA)
HK06113311.9A 2005-01-25 2006-12-05 High voltage sensor device and method therefor HK1092941A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/041,710 US7306999B2 (en) 2005-01-25 2005-01-25 High voltage sensor device and method therefor

Publications (1)

Publication Number Publication Date
HK1092941A1 true HK1092941A1 (en) 2007-02-16

Family

ID=36695899

Family Applications (2)

Application Number Title Priority Date Filing Date
HK06113311.9A HK1092941A1 (en) 2005-01-25 2006-12-05 High voltage sensor device and method therefor
HK11101492.8A HK1148864A1 (zh) 2005-01-25 2011-02-16 高壓傳感器裝置及其方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK11101492.8A HK1148864A1 (zh) 2005-01-25 2011-02-16 高壓傳感器裝置及其方法

Country Status (5)

Country Link
US (2) US7306999B2 (zh)
KR (4) KR101181753B1 (zh)
CN (2) CN101853798B (zh)
HK (2) HK1092941A1 (zh)
TW (1) TWI382183B (zh)

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JP5343306B2 (ja) * 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP5564749B2 (ja) * 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP5499915B2 (ja) * 2009-06-10 2014-05-21 富士電機株式会社 高耐圧半導体装置
FR2949630B1 (fr) * 2009-08-31 2019-04-05 Safran Electrical & Power Module electronique de commande pour transistor jfet
US20110062554A1 (en) * 2009-09-17 2011-03-17 Hsing Michael R High voltage floating well in a silicon die
TWI503956B (zh) * 2009-09-30 2015-10-11 Semiconductor Components Ind 高電壓感測器設備及其方法
US8587073B2 (en) * 2010-10-15 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor
US9373619B2 (en) * 2011-08-01 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with high voltage junction termination
US8686503B2 (en) * 2011-08-17 2014-04-01 Monolithic Power Systems, Inc. Lateral high-voltage transistor and associated method for manufacturing
US20130161740A1 (en) * 2011-12-21 2013-06-27 Donald R. Disney Lateral High-Voltage Transistor with Buried Resurf Layer and Associated Method for Manufacturing the Same
US8786021B2 (en) * 2012-09-04 2014-07-22 Macronix International Co., Ltd. Semiconductor structure having an active device and method for manufacturing and manipulating the same
US9143026B2 (en) 2013-03-08 2015-09-22 Schlumberger Technology Corporation Method and apparatus for regulating high voltage
TWI489744B (zh) 2013-06-03 2015-06-21 Richtek Technology Corp 交流對直流電源轉換器的控制電路
JP6299254B2 (ja) 2014-02-10 2018-03-28 富士電機株式会社 半導体装置、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US9941268B2 (en) * 2014-03-13 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Series resistor over drain region in high voltage device
JP6657982B2 (ja) * 2016-01-18 2020-03-04 富士電機株式会社 半導体装置
JP7009854B2 (ja) * 2017-09-11 2022-01-26 富士電機株式会社 起動素子、スイッチング電源回路の制御ｉｃ及びスイッチング電源回路
DE102017130213B4 (de) * 2017-12-15 2021-10-21 Infineon Technologies Ag Planarer feldeffekttransistor
JP7180359B2 (ja) * 2018-12-19 2022-11-30 富士電機株式会社 抵抗素子
US11152356B2 (en) 2019-02-19 2021-10-19 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
US11152454B2 (en) 2019-02-19 2021-10-19 Semiconductor Components Industries, Llc Method of forming a semiconductor device having a resistor and structure therefor
DE102019008580A1 (de) 2019-02-19 2020-08-20 Semiconductor Components Industries, Llc Verfahren zum bilden einer halbleitervorrichtung und struktur dafür
CN111834339A (zh) * 2019-04-23 2020-10-27 福建省福联集成电路有限公司 一种用于集成电路的电感结构及制作方法
US11056590B1 (en) 2020-02-04 2021-07-06 Semiconductor Components Industries, Llc Sensing device for high voltage applications
US11506687B2 (en) * 2020-07-01 2022-11-22 Semiconductor Components Industries, Llc Method of forming a semiconductor device

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Also Published As

Publication number Publication date
KR20060086858A (ko) 2006-08-01
CN1819149A (zh) 2006-08-16
CN1819149B (zh) 2012-02-01
CN101853798A (zh) 2010-10-06
US7638405B2 (en) 2009-12-29
KR101181753B1 (ko) 2012-09-12
CN101853798B (zh) 2016-01-20
KR101215879B1 (ko) 2012-12-27
KR101215878B1 (ko) 2012-12-27
US20080042242A1 (en) 2008-02-21
TWI382183B (zh) 2013-01-11
KR20120044334A (ko) 2012-05-07
KR101215877B1 (ko) 2012-12-27
TW200636255A (en) 2006-10-16
US7306999B2 (en) 2007-12-11
US20060163691A1 (en) 2006-07-27
KR20120044335A (ko) 2012-05-07
HK1148864A1 (zh) 2011-09-16
KR20120048549A (ko) 2012-05-15

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20201226