HK108597A - Fabrication of semiconductor devices using phosphosilicate glasses - Google Patents

Fabrication of semiconductor devices using phosphosilicate glasses

Info

Publication number
HK108597A
HK108597A HK108597A HK108597A HK108597A HK 108597 A HK108597 A HK 108597A HK 108597 A HK108597 A HK 108597A HK 108597 A HK108597 A HK 108597A HK 108597 A HK108597 A HK 108597A
Authority
HK
Hong Kong
Prior art keywords
fabrication
semiconductor devices
phosphosilicate glasses
phosphosilicate
glasses
Prior art date
Application number
HK108597A
Other languages
English (en)
Inventor
Debra Anne Fleming
David Wilfred Johnson Jr
Shobha Singh
Legrand G Vanuitert
George J Zydzik
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK108597A publication Critical patent/HK108597A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/133—Reflow oxides and glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Glass Melting And Manufacturing (AREA)
HK108597A 1989-05-01 1997-06-26 Fabrication of semiconductor devices using phosphosilicate glasses HK108597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/345,924 US5047369A (en) 1989-05-01 1989-05-01 Fabrication of semiconductor devices using phosphosilicate glasses

Publications (1)

Publication Number Publication Date
HK108597A true HK108597A (en) 1997-08-22

Family

ID=23357120

Family Applications (1)

Application Number Title Priority Date Filing Date
HK108597A HK108597A (en) 1989-05-01 1997-06-26 Fabrication of semiconductor devices using phosphosilicate glasses

Country Status (8)

Country Link
US (1) US5047369A (xx)
EP (1) EP0396307B1 (xx)
JP (1) JP2511556B2 (xx)
KR (1) KR970005142B1 (xx)
CA (1) CA2014934C (xx)
DE (1) DE69030401T2 (xx)
ES (1) ES2100162T3 (xx)
HK (1) HK108597A (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883902A (ja) * 1994-09-09 1996-03-26 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置
JP2750671B2 (ja) * 1995-05-18 1998-05-13 サンヨー食品株式会社 復元性の良い麺線及びその製造方法
US5837562A (en) * 1995-07-07 1998-11-17 The Charles Stark Draper Laboratory, Inc. Process for bonding a shell to a substrate for packaging a semiconductor
IT1306214B1 (it) 1998-09-09 2001-05-30 Gel Design And Engineering Srl Processo per la preparazione di film vetrosi spessi di ossido disilicio secondo la tecnica sol-gel e film spessi cosi' ottenuti.
US6559070B1 (en) * 2000-04-11 2003-05-06 Applied Materials, Inc. Mesoporous silica films with mobile ion gettering and accelerated processing
EP1495154B1 (de) * 2002-04-15 2008-04-30 Schott AG Verfahren zur gehäusebildung bei elektronischen bauteilen so wie so hermetisch verkapselte elektronische bauteile
US20050054214A1 (en) * 2003-09-10 2005-03-10 Chen Lee Jen Method for mitigating chemical vapor deposition phosphorus doping oxide surface induced defects
US6925781B1 (en) * 2004-02-03 2005-08-09 Playtex Products, Inc. Integrated cutting tool for waste disposal method and apparatus
JP4889376B2 (ja) * 2006-05-31 2012-03-07 東京エレクトロン株式会社 脱水方法および脱水装置、ならびに基板処理方法および基板処理装置
US8403027B2 (en) * 2007-04-11 2013-03-26 Alcoa Inc. Strip casting of immiscible metals
US7846554B2 (en) 2007-04-11 2010-12-07 Alcoa Inc. Functionally graded metal matrix composite sheet
US8956472B2 (en) * 2008-11-07 2015-02-17 Alcoa Inc. Corrosion resistant aluminum alloys having high amounts of magnesium and methods of making the same
EP2717299B1 (en) 2011-05-26 2016-07-27 Shindengen Electric Manufacturing Co., Ltd. Glass composition for semiconductor junction protection, production method for semiconductor device, and semiconductor device
CN103890919B (zh) * 2012-05-08 2016-07-06 新电元工业株式会社 半导体接合保护用玻璃复合物、半导体装置的制造方法以及半导体装置
US9570408B2 (en) 2012-05-08 2017-02-14 Shindengen Electric Manufacturing Co., Ltd. Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616403A (en) * 1968-10-25 1971-10-26 Ibm Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
US3767434A (en) * 1971-04-08 1973-10-23 Owens Illinois Inc METHOD OF PREPARING P{11 O{11 {13 SiO{11 {11 PRODUCTS
US3767432A (en) * 1971-04-08 1973-10-23 Owens Illinois Inc PRODUCTION OF P{11 O{11 -SiO{11 {11 PRODUCTS
US3743587A (en) * 1972-03-01 1973-07-03 Ibm Method for reactive sputter deposition of phosphosilicate glass
US4374391A (en) * 1980-09-24 1983-02-15 Bell Telephone Laboratories, Incorporated Device fabrication procedure
US4407061A (en) * 1981-06-04 1983-10-04 Bell Telephone Laboratories, Incorporated Fabrication procedure using arsenate glasses
US4419115A (en) * 1981-07-31 1983-12-06 Bell Telephone Laboratories, Incorporated Fabrication of sintered high-silica glasses
JPS58208728A (ja) * 1982-05-28 1983-12-05 Kawaguchiko Seimitsu Kk 液晶カラ−表示体
US4474831A (en) * 1982-08-27 1984-10-02 Varian Associates, Inc. Method for reflow of phosphosilicate glass
US4731293A (en) * 1986-06-20 1988-03-15 American Telephone And Telegraph Company, At&T Bell Laboratories Fabrication of devices using phosphorus glasses
US4732658A (en) * 1986-12-03 1988-03-22 Honeywell Inc. Planarization of silicon semiconductor devices
US4819039A (en) * 1986-12-22 1989-04-04 American Telephone And Telegraph Co. At&T Laboratories Devices and device fabrication with borosilicate glass

Also Published As

Publication number Publication date
DE69030401T2 (de) 1997-07-17
JP2511556B2 (ja) 1996-06-26
EP0396307B1 (en) 1997-04-09
EP0396307A2 (en) 1990-11-07
ES2100162T3 (es) 1997-06-16
CA2014934A1 (en) 1990-11-01
KR970005142B1 (ko) 1997-04-12
EP0396307A3 (en) 1991-11-27
US5047369A (en) 1991-09-10
CA2014934C (en) 1993-05-25
JPH02306628A (ja) 1990-12-20
DE69030401D1 (de) 1997-05-15
KR900019174A (ko) 1990-12-24

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)