HK1059336A1 - Tunneling emitter. - Google Patents

Tunneling emitter.

Info

Publication number
HK1059336A1
HK1059336A1 HK04102124A HK04102124A HK1059336A1 HK 1059336 A1 HK1059336 A1 HK 1059336A1 HK 04102124 A HK04102124 A HK 04102124A HK 04102124 A HK04102124 A HK 04102124A HK 1059336 A1 HK1059336 A1 HK 1059336A1
Authority
HK
Hong Kong
Prior art keywords
tunneling emitter
tunneling
emitter
Prior art date
Application number
HK04102124A
Other languages
English (en)
Inventor
Zhizhang Chen
Michael J Regan
Brian E Bolf
Thomas Novet
Paul Benning
Mark Alan Johnstone
Iram Ramamoorthi
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of HK1059336A1 publication Critical patent/HK1059336A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
HK04102124A 2001-04-30 2004-03-23 Tunneling emitter. HK1059336A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/846,127 US6781146B2 (en) 2001-04-30 2001-04-30 Annealed tunneling emitter
PCT/US2002/012257 WO2002089167A2 (en) 2001-04-30 2002-04-16 Tunneling emitter

Publications (1)

Publication Number Publication Date
HK1059336A1 true HK1059336A1 (en) 2004-06-25

Family

ID=25297021

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04102124A HK1059336A1 (en) 2001-04-30 2004-03-23 Tunneling emitter.

Country Status (9)

Country Link
US (3) US6781146B2 (zh)
EP (1) EP1384244B1 (zh)
JP (1) JP2005502159A (zh)
KR (1) KR20040015202A (zh)
CN (1) CN1539152A (zh)
DE (1) DE60201748T2 (zh)
HK (1) HK1059336A1 (zh)
TW (1) TW550621B (zh)
WO (1) WO2002089167A2 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6758711B2 (en) * 2001-06-14 2004-07-06 Hewlett-Packard Development Company, L.P. Integrated focusing emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6841794B2 (en) * 2003-02-18 2005-01-11 Hewlett-Packard Development Company, L.P. Dielectric emitter with PN junction
KR100935934B1 (ko) * 2003-03-15 2010-01-11 삼성전자주식회사 전자빔 리소그라피 시스템의 에미터 및 그 제조방법
US20040213128A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Beam deflector for a data storage device
US20040213098A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Focus-detecting emitter for a data storage device
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
US7187124B2 (en) * 2004-02-17 2007-03-06 Hewlett-Packard Development Company, L.P. Transparent electron source emitter device and method
US7454221B1 (en) * 2005-07-12 2008-11-18 Hewlett-Packard Development Company, L.P. Electron tube amplification
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US10109794B2 (en) * 2015-06-08 2018-10-23 SK Hynix Inc. Semiconductor device including an etching stop layer and method of manufacturing the same
CN106252179A (zh) * 2016-08-29 2016-12-21 北京大学 一种基于阻变材料的微型电子源及其阵列和实现方法

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GB2109159B (en) 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
EP0251328B1 (en) 1986-07-04 1995-01-04 Canon Kabushiki Kaisha Electron emitting device and process for producing the same
EP0365630B1 (fr) 1988-03-25 1994-03-02 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
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DE69518849T2 (de) * 1995-12-14 2001-01-11 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Herstellung einer Mikrospitzenkathodenstruktur für eine Feldemissionsanzeigetafel
JP3171785B2 (ja) * 1996-06-20 2001-06-04 富士通株式会社 薄型表示装置、及びそれに用いる電界放出陰極の製造方法
US5825049A (en) * 1996-10-09 1998-10-20 Sandia Corporation Resonant tunneling device with two-dimensional quantum well emitter and base layers
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US6107732A (en) 1998-07-13 2000-08-22 Si Diamond Technology, Inc. Inhibiting edge emission for an addressable field emission thin film flat cathode display
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TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
US6328620B1 (en) * 1998-12-04 2001-12-11 Micron Technology, Inc. Apparatus and method for forming cold-cathode field emission displays
JP3508652B2 (ja) 1999-10-18 2004-03-22 松下電工株式会社 電界放射型電子源およびその製造方法
JP2001118500A (ja) 1999-10-18 2001-04-27 Matsushita Electric Works Ltd 電界放射型電子源およびその製造方法
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
KR20010082591A (ko) * 1999-12-21 2001-08-30 이데이 노부유끼 전자 방출 장치, 냉음극 전계 전자 방출 소자 및 그 제조방법, 및 냉음극 전계 전자 방출 표시 장치 및 그 제조 방법
JP3874396B2 (ja) * 2000-01-13 2007-01-31 パイオニア株式会社 電子放出素子及びその製造方法並びに電子放出素子を用いた表示装置
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US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer

Also Published As

Publication number Publication date
EP1384244B1 (en) 2004-10-27
CN1539152A (zh) 2004-10-20
DE60201748D1 (de) 2004-12-02
US6781146B2 (en) 2004-08-24
KR20040015202A (ko) 2004-02-18
US20040211975A1 (en) 2004-10-28
WO2002089167A2 (en) 2002-11-07
US20040222729A1 (en) 2004-11-11
WO2002089167A3 (en) 2003-05-01
JP2005502159A (ja) 2005-01-20
US7044823B2 (en) 2006-05-16
DE60201748T2 (de) 2005-12-01
EP1384244A2 (en) 2004-01-28
TW550621B (en) 2003-09-01
US20020167001A1 (en) 2002-11-14

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100416