HK1039683B - 在集成電路的製造中電化學形成高純度銅導體的方法 - Google Patents

在集成電路的製造中電化學形成高純度銅導體的方法

Info

Publication number
HK1039683B
HK1039683B HK02100957.9A HK02100957A HK1039683B HK 1039683 B HK1039683 B HK 1039683B HK 02100957 A HK02100957 A HK 02100957A HK 1039683 B HK1039683 B HK 1039683B
Authority
HK
Hong Kong
Prior art keywords
copper
semiconductor substrates
integrated circuits
conductor structures
forming conductor
Prior art date
Application number
HK02100957.9A
Other languages
English (en)
Other versions
HK1039683A1 (en
Inventor
Meyer Heinrich
Thies Andreas
Original Assignee
阿托技術德國有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19915146A external-priority patent/DE19915146C1/de
Application filed by 阿托技術德國有限公司 filed Critical 阿托技術德國有限公司
Publication of HK1039683A1 publication Critical patent/HK1039683A1/xx
Publication of HK1039683B publication Critical patent/HK1039683B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Chemically Coating (AREA)
HK02100957.9A 1999-01-21 2002-02-07 在集成電路的製造中電化學形成高純度銅導體的方法 HK1039683B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19903178 1999-01-21
DE19915146A DE19915146C1 (de) 1999-01-21 1999-03-26 Verfahren zum galvanischen Bilden von Leiterstrukturen aus hochreinem Kupfer bei der Herstellung von integrierten Schaltungen
PCT/DE2000/000133 WO2000044042A1 (de) 1999-01-21 2000-01-11 Verfahren zum galvanischen bilden von leiterstrukturen aus hochreinem kupfer bei der herstellung von integrierten schaltungen

Publications (2)

Publication Number Publication Date
HK1039683A1 HK1039683A1 (en) 2002-05-03
HK1039683B true HK1039683B (zh) 2005-05-06

Family

ID=26051508

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02100957.9A HK1039683B (zh) 1999-01-21 2002-02-07 在集成電路的製造中電化學形成高純度銅導體的方法

Country Status (11)

Country Link
US (1) US6793795B1 (zh)
EP (1) EP1153430B1 (zh)
JP (1) JP3374130B2 (zh)
CN (1) CN1137511C (zh)
AT (1) ATE282248T1 (zh)
AU (1) AU3143500A (zh)
BR (1) BR0007639A (zh)
CA (1) CA2359473A1 (zh)
HK (1) HK1039683B (zh)
TW (1) TW464989B (zh)
WO (1) WO2000044042A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6605204B1 (en) * 1999-10-14 2003-08-12 Atofina Chemicals, Inc. Electroplating of copper from alkanesulfonate electrolytes
WO2002031228A1 (en) * 2000-10-10 2002-04-18 Learonal Japan Inc. Copper electroplating using insoluble anode
US6736954B2 (en) * 2001-10-02 2004-05-18 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate
DE10232612B4 (de) * 2002-07-12 2006-05-18 Atotech Deutschland Gmbh Vorrichtung und Verfahren zur Überwachung eines elektrolytischen Prozesses
EP1475463B2 (en) * 2002-12-20 2017-03-01 Shipley Company, L.L.C. Reverse pulse plating method
US20050082172A1 (en) * 2003-10-21 2005-04-21 Applied Materials, Inc. Copper replenishment for copper plating with insoluble anode
JP4973829B2 (ja) * 2004-07-23 2012-07-11 上村工業株式会社 電気銅めっき浴及び電気銅めっき方法
DE102004045451B4 (de) * 2004-09-20 2007-05-03 Atotech Deutschland Gmbh Galvanisches Verfahren zum Füllen von Durchgangslöchern mit Metallen, insbesondere von Leiterplatten mit Kupfer
JP4799887B2 (ja) * 2005-03-24 2011-10-26 石原薬品株式会社 電気銅メッキ浴、並びに銅メッキ方法
US20070238265A1 (en) * 2005-04-05 2007-10-11 Keiichi Kurashina Plating apparatus and plating method
CN100431106C (zh) * 2005-09-26 2008-11-05 财团法人工业技术研究院 形成纳米碳管与金属复合材料的电镀互连导线的方法
ATE484943T1 (de) * 2006-03-30 2010-10-15 Atotech Deutschland Gmbh Elektrolytisches verfahren zum füllen von löchern und vertiefungen mit metallen
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
US20110056838A1 (en) * 2009-09-04 2011-03-10 Ibiden, Co., Ltd. Method of manufacturing printed wiring board
EP2392694A1 (en) 2010-06-02 2011-12-07 ATOTECH Deutschland GmbH Method for etching of copper and copper alloys
US8973538B2 (en) * 2010-06-18 2015-03-10 Caterpillar Inc. Inline engine having side-mounted heat exchangers
US20120024713A1 (en) * 2010-07-29 2012-02-02 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) with heated substrate and cooled electrolyte
EP2668317B1 (en) 2011-01-26 2017-08-23 MacDermid Enthone Inc. Process for filling vias in the microelectronics
US8970043B2 (en) * 2011-02-01 2015-03-03 Maxim Integrated Products, Inc. Bonded stacked wafers and methods of electroplating bonded stacked wafers
CN103179806B (zh) * 2011-12-21 2019-05-28 奥特斯有限公司 组合的通孔镀覆和孔填充的方法
CN103290438B (zh) * 2013-06-25 2015-12-02 深圳市创智成功科技有限公司 用于晶圆级封装的电镀铜溶液及电镀方法
CN103668356B (zh) * 2013-12-17 2016-04-13 上海交通大学 在铜互连硫酸铜镀液中添加Fe2+和Fe3+的电镀方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666567A (en) * 1981-07-31 1987-05-19 The Boeing Company Automated alternating polarity pulse electrolytic processing of electrically conductive substances
GB8801827D0 (en) * 1988-01-27 1988-02-24 Jct Controls Ltd Improvements in electrochemical processes
DE4344387C2 (de) * 1993-12-24 1996-09-05 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens
DE19545231A1 (de) * 1995-11-21 1997-05-22 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Metallschichten
US5893966A (en) * 1997-07-28 1999-04-13 Micron Technology, Inc. Method and apparatus for continuous processing of semiconductor wafers
WO1999040615A1 (en) * 1998-02-04 1999-08-12 Semitool, Inc. Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device
JP2002506488A (ja) * 1998-04-21 2002-02-26 アプライド マテリアルズ インコーポレイテッド 電気化学堆積システム及び基体の電気めっき方法
US6596148B1 (en) * 1999-08-04 2003-07-22 Mykrolis Corporation Regeneration of plating baths and system therefore

Also Published As

Publication number Publication date
CN1337064A (zh) 2002-02-20
HK1039683A1 (en) 2002-05-03
JP3374130B2 (ja) 2003-02-04
ATE282248T1 (de) 2004-11-15
EP1153430B1 (de) 2004-11-10
CA2359473A1 (en) 2000-07-27
EP1153430A1 (de) 2001-11-14
JP2002535494A (ja) 2002-10-22
TW464989B (en) 2001-11-21
CN1137511C (zh) 2004-02-04
US6793795B1 (en) 2004-09-21
BR0007639A (pt) 2001-11-06
WO2000044042A1 (de) 2000-07-27
AU3143500A (en) 2000-08-07

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20110111