HK1013518A1 - Electronic device having ferroelectric memory - Google Patents

Electronic device having ferroelectric memory

Info

Publication number
HK1013518A1
HK1013518A1 HK98114700A HK98114700A HK1013518A1 HK 1013518 A1 HK1013518 A1 HK 1013518A1 HK 98114700 A HK98114700 A HK 98114700A HK 98114700 A HK98114700 A HK 98114700A HK 1013518 A1 HK1013518 A1 HK 1013518A1
Authority
HK
Hong Kong
Prior art keywords
electronic device
ferroelectric memory
ferroelectric
memory
electronic
Prior art date
Application number
HK98114700A
Other languages
English (en)
Inventor
Orimoto Takashi
Ishikawa Ryo
Kaneko Katsuyoshi
Shirasaka Takashi
Suzuki Shigeto
Original Assignee
Casio Comp Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Comp Company Ltd filed Critical Casio Comp Company Ltd
Publication of HK1013518A1 publication Critical patent/HK1013518A1/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045Read-write mode select circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Sources (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Calculators And Similar Devices (AREA)
HK98114700A 1993-04-13 1998-12-22 Electronic device having ferroelectric memory HK1013518A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5086441A JPH06302179A (ja) 1993-04-13 1993-04-13 電子機器

Publications (1)

Publication Number Publication Date
HK1013518A1 true HK1013518A1 (en) 1999-08-27

Family

ID=13887011

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98114700A HK1013518A1 (en) 1993-04-13 1998-12-22 Electronic device having ferroelectric memory

Country Status (8)

Country Link
US (1) US5850231A (xx)
EP (1) EP0620555B1 (xx)
JP (1) JPH06302179A (xx)
KR (1) KR0151223B1 (xx)
CN (1) CN1037633C (xx)
DE (1) DE69425341T2 (xx)
HK (1) HK1013518A1 (xx)
TW (1) TW251358B (xx)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880991A (en) * 1997-04-14 1999-03-09 International Business Machines Corporation Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure
US6362675B1 (en) * 1999-07-12 2002-03-26 Ramtron International Corporation Nonvolatile octal latch and D-type register
US6259126B1 (en) 1999-11-23 2001-07-10 International Business Machines Corporation Low cost mixed memory integration with FERAM
US6420742B1 (en) * 2000-06-16 2002-07-16 Micron Technology, Inc. Ferroelectric memory transistor with high-k gate insulator and method of fabrication
JP2002342104A (ja) * 2001-05-18 2002-11-29 Hitachi Ltd 制御装置及びそれを用いた光ディスク装置
JP3540772B2 (ja) * 2001-05-23 2004-07-07 三洋電機株式会社 表示装置およびその制御方法
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
DE102004001577B4 (de) * 2004-01-10 2007-08-02 Infineon Technologies Ag Halbleiter-Speicherschaltung und Verfahren zum Betreiben derselben in einem Bereitschaftsmodus
JP4908560B2 (ja) * 2009-08-31 2012-04-04 株式会社東芝 強誘電体メモリ及びメモリシステム
JP5546230B2 (ja) * 2009-12-10 2014-07-09 キヤノン株式会社 情報処理装置、情報処理方法、及びプログラム
TWI521534B (zh) 2013-10-09 2016-02-11 新唐科技股份有限公司 積體電路及其運作方法
TWI524080B (zh) 2014-01-29 2016-03-01 新唐科技股份有限公司 應用於積體電路的運作記錄電路及其運作方法
CN105580242B (zh) * 2015-06-29 2018-02-02 深圳市大疆创新科技有限公司 控制电路、具有该控制电路的电池及电池控制方法
CN105097029B (zh) * 2015-07-27 2019-07-26 联想(北京)有限公司 一种存储设备及信息处理方法
US10153020B1 (en) * 2017-06-09 2018-12-11 Micron Technology, Inc. Dual mode ferroelectric memory cell operation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法,製造方法
EP0374285A1 (de) * 1988-12-21 1990-06-27 Deutsche ITT Industries GmbH Tragbare elektronische Bildaufnahmeeinrichtung
DE4110407A1 (de) * 1990-03-30 1991-10-02 Toshiba Kawasaki Kk Halbleiter-speicheranordnung
DE4119248A1 (de) * 1990-06-21 1992-01-02 Seiko Instr Inc Integrierter halbleiterschaltkreis
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
US5270967A (en) * 1991-01-16 1993-12-14 National Semiconductor Corporation Refreshing ferroelectric capacitors
US5198384A (en) * 1991-05-15 1993-03-30 Micron Technology, Inc. Process for manufacturing a ferroelectric dynamic/non-volatile memory array using a disposable layer above storage-node junction

Also Published As

Publication number Publication date
DE69425341T2 (de) 2000-12-07
KR940024596A (ko) 1994-11-18
KR0151223B1 (ko) 1998-12-01
JPH06302179A (ja) 1994-10-28
TW251358B (xx) 1995-07-11
EP0620555A3 (en) 1997-03-05
EP0620555A2 (en) 1994-10-19
DE69425341D1 (de) 2000-08-31
CN1109186A (zh) 1995-09-27
EP0620555B1 (en) 2000-07-26
CN1037633C (zh) 1998-03-04
US5850231A (en) 1998-12-15

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090413