HK1003461A1 - Esd protection of output buffers - Google Patents

Esd protection of output buffers

Info

Publication number
HK1003461A1
HK1003461A1 HK98102487A HK98102487A HK1003461A1 HK 1003461 A1 HK1003461 A1 HK 1003461A1 HK 98102487 A HK98102487 A HK 98102487A HK 98102487 A HK98102487 A HK 98102487A HK 1003461 A1 HK1003461 A1 HK 1003461A1
Authority
HK
Hong Kong
Prior art keywords
esd protection
output buffers
buffers
output
esd
Prior art date
Application number
HK98102487A
Other languages
English (en)
Inventor
Juergen Pianka
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK1003461A1 publication Critical patent/HK1003461A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK98102487A 1992-06-05 1998-03-24 Esd protection of output buffers HK1003461A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/894,405 US5345357A (en) 1992-06-05 1992-06-05 ESD protection of output buffers

Publications (1)

Publication Number Publication Date
HK1003461A1 true HK1003461A1 (en) 1998-10-30

Family

ID=25403031

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98102487A HK1003461A1 (en) 1992-06-05 1998-03-24 Esd protection of output buffers

Country Status (6)

Country Link
US (1) US5345357A (ko)
EP (1) EP0575062B1 (ko)
JP (1) JP2777047B2 (ko)
KR (1) KR0135499B1 (ko)
DE (1) DE69319968T2 (ko)
HK (1) HK1003461A1 (ko)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5611053A (en) * 1994-01-21 1997-03-11 Advanced Micro Devices, Inc. Apparatus and method for integrating bus master ownership of local bus load by plural data transceivers
US6295572B1 (en) * 1994-01-24 2001-09-25 Advanced Micro Devices, Inc. Integrated SCSI and ethernet controller on a PCI local bus
US5528188A (en) * 1995-03-13 1996-06-18 International Business Machines Corporation Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier
FR2734674B1 (fr) * 1995-05-24 1997-08-14 Sgs Thomson Microelectronics Dispositif d'ecretage
US5615073A (en) * 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
US5675469A (en) * 1995-07-12 1997-10-07 Motorola, Inc. Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit
US5631793A (en) * 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US5625280A (en) * 1995-10-30 1997-04-29 International Business Machines Corp. Voltage regulator bypass circuit
FR2741756B1 (fr) * 1995-11-28 1998-01-02 Sgs Thomson Microelectronics Circuit de protection contre les surtensions
GB2308731A (en) * 1995-12-22 1997-07-02 Motorola Gmbh Semiconductor device with electrostatic discharge protection
US5771389A (en) * 1996-02-28 1998-06-23 Intel Corporation Low slew rate output buffer with staged biasing voltage
US6125021A (en) * 1996-04-30 2000-09-26 Texas Instruments Incorporated Semiconductor ESD protection circuit
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5919253A (en) * 1997-06-25 1999-07-06 Adaptec, Inc. Hot-switchable SCSI controller having output drivers with quick turn-on
JPH1154711A (ja) * 1997-08-04 1999-02-26 Nippon Precision Circuits Kk 半導体装置の静電保護回路
US6034552A (en) * 1998-04-30 2000-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Output ESD protection using dynamic-floating-gate arrangement
JP2001024496A (ja) * 1999-07-02 2001-01-26 Nec Corp 入出力回路
US6529359B1 (en) * 1999-08-06 2003-03-04 Sarnoff Corporation Circuits for dynamic turn off of NMOS output drivers during EOS/ESD stress
DE10022366A1 (de) * 2000-05-08 2001-11-29 Micronas Gmbh ESD-Schutzstruktur
US6529059B1 (en) 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit
US6400204B1 (en) 2000-07-26 2002-06-04 Agere Systems Guardian Corp. Input stage ESD protection for an integrated circuit
FR2813461B1 (fr) * 2000-08-22 2003-01-31 St Microelectronics Sa Dispositif de protection d'un transistor integre contre des decharges electrostatiques
US6643109B1 (en) * 2000-09-27 2003-11-04 Conexant Systems, Inc. Fully synthesisable and highly area efficient very large scale integration (VLSI) electrostatic discharge (ESD) protection circuit
US6545520B2 (en) * 2001-03-28 2003-04-08 Intel Corporation Method and apparatus for electro-static discharge protection
US20030214342A1 (en) * 2002-05-14 2003-11-20 Darrin Benzer IO clamping circuit method utilizing output driver transistors
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6900970B2 (en) * 2003-01-22 2005-05-31 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6984029B2 (en) 2003-07-11 2006-01-10 Hewlett-Packard Development Company, Lp. Print cartridge temperature control
JP2005235947A (ja) * 2004-02-18 2005-09-02 Fujitsu Ltd 静電気放電保護回路
US7573691B2 (en) * 2004-04-12 2009-08-11 Agere Systems Inc. Electrical over stress robustness
JP4515822B2 (ja) * 2004-05-25 2010-08-04 株式会社東芝 静電保護回路及びこれを用いた半導体集積回路装置
US7170324B2 (en) * 2004-07-15 2007-01-30 Agere Systems Inc. Output buffer with selectable slew rate
JP2006080160A (ja) * 2004-09-07 2006-03-23 Toshiba Corp 静電保護回路
US7203045B2 (en) * 2004-10-01 2007-04-10 International Business Machines Corporation High voltage ESD power clamp
US7529070B2 (en) * 2005-03-11 2009-05-05 Agere Systems Inc. Power pin to power pin electro-static discharge (ESD) clamp
US7692905B2 (en) * 2006-11-28 2010-04-06 Smartech Worldwide Limited Electrostatic discharge protection circuit for output buffer
US7619862B2 (en) * 2007-02-22 2009-11-17 Smartech Worldwide Limited Electrostatic discharge protection circuit for high voltage input pad
TW200929768A (en) * 2007-12-26 2009-07-01 Princeton Technology Corp ESD protecting circuit with gate voltage raising circuit
TW200929783A (en) * 2007-12-26 2009-07-01 Princeton Technology Corp ESD protecting leading circuit
US9013842B2 (en) 2011-01-10 2015-04-21 Infineon Technologies Ag Semiconductor ESD circuit and method
JP5565336B2 (ja) * 2011-02-14 2014-08-06 富士通セミコンダクター株式会社 出力回路、システム、及び出力回路の制御方法
FR3001085A1 (fr) * 2013-01-15 2014-07-18 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement
KR102000738B1 (ko) 2013-01-28 2019-07-23 삼성디스플레이 주식회사 정전기 방지 회로 및 이를 포함하는 표시 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855620A (en) * 1987-11-18 1989-08-08 Texas Instruments Incorporated Output buffer with improved ESD protection
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
DE69225026T2 (de) * 1991-07-19 1998-10-15 Koninkl Philips Electronics Nv Überspannungsgeschützter Halbleiterschalter
US5208719A (en) * 1991-08-20 1993-05-04 Vlsi Technology, Inc. Output pad electrostatic discharge protection circuit for mos devices

Also Published As

Publication number Publication date
EP0575062B1 (en) 1998-07-29
JP2777047B2 (ja) 1998-07-16
JPH06163824A (ja) 1994-06-10
EP0575062A1 (en) 1993-12-22
US5345357A (en) 1994-09-06
KR940001389A (ko) 1994-01-11
KR0135499B1 (ko) 1998-04-22
DE69319968T2 (de) 1998-12-24
DE69319968D1 (de) 1998-09-03

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)