GB998942A - Process for the preparation of monocrystalline semiconducting elements - Google Patents
Process for the preparation of monocrystalline semiconducting elementsInfo
- Publication number
- GB998942A GB998942A GB30938/63A GB3093863A GB998942A GB 998942 A GB998942 A GB 998942A GB 30938/63 A GB30938/63 A GB 30938/63A GB 3093863 A GB3093863 A GB 3093863A GB 998942 A GB998942 A GB 998942A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sihcl3
- tmax
- gas
- semi
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910003822 SiHCl3 Inorganic materials 0.000 abstract 7
- 239000007789 gas Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 4
- -1 SiCl4 Chemical class 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 150000004678 hydrides Chemical class 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0081093 | 1962-08-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB998942A true GB998942A (en) | 1965-07-21 |
Family
ID=7509332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30938/63A Expired GB998942A (en) | 1962-08-24 | 1963-08-06 | Process for the preparation of monocrystalline semiconducting elements |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3341359A (https=) |
| CH (1) | CH430665A (https=) |
| DE (1) | DE1444526B2 (https=) |
| FR (1) | FR1397154A (https=) |
| GB (1) | GB998942A (https=) |
| SE (1) | SE337973B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0794561A1 (en) * | 1996-03-04 | 1997-09-10 | Shin-Etsu Handotai Company Limited | Method of growing a silicon single crystal thin film in vapor phase |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2831816A1 (de) | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL246576A (https=) * | 1954-05-18 | 1900-01-01 | ||
| DE1048638B (de) * | 1957-07-02 | 1959-01-15 | Siemens &. Halske Aktiengesellschaft, Berlin und München | Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion |
| NL256017A (https=) * | 1959-09-23 | 1900-01-01 | ||
| NL260072A (https=) * | 1960-01-15 |
-
1962
- 1962-08-24 DE DE19621444526 patent/DE1444526B2/de not_active Withdrawn
-
1963
- 1963-06-18 CH CH753863A patent/CH430665A/de unknown
- 1963-07-29 FR FR943011A patent/FR1397154A/fr not_active Expired
- 1963-08-06 GB GB30938/63A patent/GB998942A/en not_active Expired
- 1963-08-07 US US300587A patent/US3341359A/en not_active Expired - Lifetime
- 1963-08-23 SE SE09269/63A patent/SE337973B/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0794561A1 (en) * | 1996-03-04 | 1997-09-10 | Shin-Etsu Handotai Company Limited | Method of growing a silicon single crystal thin film in vapor phase |
| US5868833A (en) * | 1996-03-04 | 1999-02-09 | Shin-Etsu Handotai Co., Ltd. | Method of producing silicon single crystal thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1397154A (fr) | 1965-04-30 |
| DE1444526A1 (de) | 1968-10-17 |
| SE337973B (https=) | 1971-08-23 |
| US3341359A (en) | 1967-09-12 |
| DE1444526B2 (de) | 1971-02-04 |
| CH430665A (de) | 1967-02-28 |
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