GB986546A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
GB986546A
GB986546A GB11739/62A GB1173962A GB986546A GB 986546 A GB986546 A GB 986546A GB 11739/62 A GB11739/62 A GB 11739/62A GB 1173962 A GB1173962 A GB 1173962A GB 986546 A GB986546 A GB 986546A
Authority
GB
United Kingdom
Prior art keywords
silicon
silicochloroform
passing
core
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11739/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of GB986546A publication Critical patent/GB986546A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB11739/62A 1961-03-31 1962-03-27 Semiconductor Expired GB986546A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99906A US3108072A (en) 1961-03-31 1961-03-31 Semiconductor process

Publications (1)

Publication Number Publication Date
GB986546A true GB986546A (en) 1965-03-17

Family

ID=22277186

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11739/62A Expired GB986546A (en) 1961-03-31 1962-03-27 Semiconductor

Country Status (3)

Country Link
US (1) US3108072A (enrdf_load_stackoverflow)
GB (1) GB986546A (enrdf_load_stackoverflow)
NL (1) NL276635A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL275029A (enrdf_load_stackoverflow) * 1961-05-16 1900-01-01
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
DE2623350A1 (de) * 1976-05-25 1977-12-08 Wacker Chemitronic Verfahren zur bestimmung des wirksamen dotierstoffgehaltes von wasserstoff fuer die halbleiterherstellung
CA2892002A1 (en) * 2012-12-11 2014-06-19 Hemlock Semiconductor Corporation Methods of forming and analyzing doped silicon
AU2015222873B2 (en) 2014-02-27 2018-09-13 University Surgical Associates, Inc. Interactive display for surgery

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (enrdf_load_stackoverflow) * 1951-11-16
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
US2964396A (en) * 1954-05-24 1960-12-13 Siemens Ag Producing semiconductor substances of highest purity
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
BE582787A (enrdf_load_stackoverflow) * 1958-09-20 1900-01-01

Also Published As

Publication number Publication date
US3108072A (en) 1963-10-22
NL276635A (enrdf_load_stackoverflow)

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