JPS57109385A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57109385A
JPS57109385A JP56064525A JP6452581A JPS57109385A JP S57109385 A JPS57109385 A JP S57109385A JP 56064525 A JP56064525 A JP 56064525A JP 6452581 A JP6452581 A JP 6452581A JP S57109385 A JPS57109385 A JP S57109385A
Authority
JP
Japan
Prior art keywords
semiconductor
unpaired
mass
elements
neutralizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56064525A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56064525A priority Critical patent/JPS57109385A/en
Publication of JPS57109385A publication Critical patent/JPS57109385A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors

Abstract

PURPOSE:To increase electric conductivity by neutralizing unpaired coupler adding hydrogen or halogen elements to a semiconductor device having crystalline or mass-shaped cluster construction. CONSTITUTION:Energy band width of a semiconductor is increased to 1.2-1.8e by neutralizing unpaired couplers adding hydrogen or halogen elements in the periphery of a mass or granular interface where unpaired couplers tend to exist in the non single crystal semiconductor, formed on a substrate, having crystalliizing tendency in a short range or a middle range orders. Halogen compounds also constitute hydrogen bond and accelerate the movement of electrons and holes. The composing elements and impurity elements of the semiconductor are activated to become a mass shaped cluster formed on the surface by conduction energy from a position apart from the semiconductor surface.
JP56064525A 1981-04-27 1981-04-27 Semiconductor device Pending JPS57109385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56064525A JPS57109385A (en) 1981-04-27 1981-04-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064525A JPS57109385A (en) 1981-04-27 1981-04-27 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5886379A Division JPS55151329A (en) 1979-05-14 1979-05-14 Fabricating method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57109385A true JPS57109385A (en) 1982-07-07

Family

ID=13260715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064525A Pending JPS57109385A (en) 1981-04-27 1981-04-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57109385A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232764A (en) * 2013-05-28 2014-12-11 シャープ株式会社 Solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232764A (en) * 2013-05-28 2014-12-11 シャープ株式会社 Solar cell

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