GB9114014D0 - Plasma assisted diamond synthesis - Google Patents

Plasma assisted diamond synthesis

Info

Publication number
GB9114014D0
GB9114014D0 GB919114014A GB9114014A GB9114014D0 GB 9114014 D0 GB9114014 D0 GB 9114014D0 GB 919114014 A GB919114014 A GB 919114014A GB 9114014 A GB9114014 A GB 9114014A GB 9114014 D0 GB9114014 D0 GB 9114014D0
Authority
GB
United Kingdom
Prior art keywords
plasma
substrate
gas
reaction chamber
bell jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB919114014A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB919114014A priority Critical patent/GB9114014D0/en
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Publication of GB9114014D0 publication Critical patent/GB9114014D0/en
Priority to AU18623/92A priority patent/AU1862392A/en
Priority to CA002072455A priority patent/CA2072455A1/en
Priority to ZA924765A priority patent/ZA924765B/xx
Priority to KR1019920011419A priority patent/KR930000181A/ko
Priority to EP92305950A priority patent/EP0520832B1/en
Priority to DE69209163T priority patent/DE69209163T2/de
Priority to JP4210619A priority patent/JPH05239656A/ja
Priority to AT92305950T priority patent/ATE135752T1/de
Priority to TW081105485A priority patent/TW262626B/zh
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/274Diamond only using microwave discharges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
GB919114014A 1991-06-28 1991-06-28 Plasma assisted diamond synthesis Pending GB9114014D0 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB919114014A GB9114014D0 (en) 1991-06-28 1991-06-28 Plasma assisted diamond synthesis
AU18623/92A AU1862392A (en) 1991-06-28 1992-06-26 Plasma assisted diamond synthesis
CA002072455A CA2072455A1 (en) 1991-06-28 1992-06-26 Plasma assisted diamond synthesis
ZA924765A ZA924765B (en) 1991-06-28 1992-06-26 Plasma assisted diamond synthesis
KR1019920011419A KR930000181A (ko) 1991-06-28 1992-06-27 다이아몬드 합성을 돕는 플라즈마 형성방법
EP92305950A EP0520832B1 (en) 1991-06-28 1992-06-29 Plasma assisted diamond synthesis
AT92305950T ATE135752T1 (de) 1991-06-28 1992-06-29 Plasmaunterstützte diamantherstellung
DE69209163T DE69209163T2 (de) 1991-06-28 1992-06-29 Plasmaunterstützte Diamantherstellung
JP4210619A JPH05239656A (ja) 1991-06-28 1992-06-29 プラズマを形成する方法および装置
TW081105485A TW262626B (enExample) 1991-06-28 1992-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919114014A GB9114014D0 (en) 1991-06-28 1991-06-28 Plasma assisted diamond synthesis

Publications (1)

Publication Number Publication Date
GB9114014D0 true GB9114014D0 (en) 1991-08-14

Family

ID=10697507

Family Applications (1)

Application Number Title Priority Date Filing Date
GB919114014A Pending GB9114014D0 (en) 1991-06-28 1991-06-28 Plasma assisted diamond synthesis

Country Status (10)

Country Link
EP (1) EP0520832B1 (enExample)
JP (1) JPH05239656A (enExample)
KR (1) KR930000181A (enExample)
AT (1) ATE135752T1 (enExample)
AU (1) AU1862392A (enExample)
CA (1) CA2072455A1 (enExample)
DE (1) DE69209163T2 (enExample)
GB (1) GB9114014D0 (enExample)
TW (1) TW262626B (enExample)
ZA (1) ZA924765B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5328550A (en) * 1992-10-02 1994-07-12 At&T Bell Laboratories Thinning a diamond body by means of molten rare-earth-containing alloys
DE10156615B4 (de) * 2001-11-17 2004-10-07 Forschungszentrum Karlsruhe Gmbh Einrichtung zur Erzeugung eines örtlich variierbaren Elektron-Zyklotron-Resonanz-Mikrowellen-Niederdruckplasmas
US6845734B2 (en) * 2002-04-11 2005-01-25 Micron Technology, Inc. Deposition apparatuses configured for utilizing phased microwave radiation
RU2215061C1 (ru) 2002-09-30 2003-10-27 Институт прикладной физики РАН Высокоскоростной способ осаждения алмазных пленок из газовой фазы в плазме свч-разряда и плазменный реактор для его реализации
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US6904935B2 (en) 2002-12-18 2005-06-14 Masco Corporation Of Indiana Valve component with multiple surface layers
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
RU2357001C2 (ru) * 2007-07-25 2009-05-27 Ооо "Твинн" Способ получения изделий из поликристаллического алмаза
DE102008035917B4 (de) * 2008-08-01 2010-06-17 Eads Deutschland Gmbh Blitzschutz von Radomen und Sende-/Empfangsvorrichtungen
CN113373425B (zh) * 2020-03-10 2022-06-10 宏硕系统股份有限公司 人造钻石生产装置及其微波发射模块
US11155915B1 (en) 2020-04-13 2021-10-26 Wave Power Technology Inc. Artificial diamond production device and microwave transmitting module thereof
JP7074795B2 (ja) * 2020-04-21 2022-05-24 宏碩系統股▲フン▼有限公司 合成ダイヤモンドの製造装置及びこれに用いられるマイクロ波発射モジュール
US12084759B2 (en) 2022-01-07 2024-09-10 Wave Power Technology Inc. Artificial diamond plasma production device
JP7250969B1 (ja) * 2022-02-08 2023-04-03 宏碩系統股▲フン▼有限公司 人工ダイヤモンドプラズマ生成機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
AU560521B2 (en) * 1982-10-18 1987-04-09 Energy Conversion Devices Inc. Layered amorphous semiconductor alloys

Also Published As

Publication number Publication date
KR930000181A (ko) 1993-01-15
ATE135752T1 (de) 1996-04-15
TW262626B (enExample) 1995-11-11
EP0520832B1 (en) 1996-03-20
JPH05239656A (ja) 1993-09-17
DE69209163D1 (de) 1996-04-25
DE69209163T2 (de) 1996-08-01
EP0520832A1 (en) 1992-12-30
ZA924765B (en) 1993-03-31
AU1862392A (en) 1993-01-07
CA2072455A1 (en) 1992-12-29

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