GB900334A - Passivating coatings on exposed semiconductor surfaces - Google Patents

Passivating coatings on exposed semiconductor surfaces

Info

Publication number
GB900334A
GB900334A GB35736/60A GB3573660A GB900334A GB 900334 A GB900334 A GB 900334A GB 35736/60 A GB35736/60 A GB 35736/60A GB 3573660 A GB3573660 A GB 3573660A GB 900334 A GB900334 A GB 900334A
Authority
GB
United Kingdom
Prior art keywords
cathode
al2o3
exposed semiconductor
sputtering
semiconductor surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35736/60A
Other languages
English (en)
Inventor
Sven Erik Bjorck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL257102D priority Critical patent/NL257102A/xx
Application filed by ASEA AB, Allmanna Svenska Elektriska AB filed Critical ASEA AB
Priority to GB35736/60A priority patent/GB900334A/en
Publication of GB900334A publication Critical patent/GB900334A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2

Landscapes

  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
GB35736/60A 1960-10-18 1960-10-18 Passivating coatings on exposed semiconductor surfaces Expired GB900334A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
NL257102D NL257102A (enExample) 1960-10-18
GB35736/60A GB900334A (en) 1960-10-18 1960-10-18 Passivating coatings on exposed semiconductor surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35736/60A GB900334A (en) 1960-10-18 1960-10-18 Passivating coatings on exposed semiconductor surfaces

Publications (1)

Publication Number Publication Date
GB900334A true GB900334A (en) 1962-07-04

Family

ID=10381014

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35736/60A Expired GB900334A (en) 1960-10-18 1960-10-18 Passivating coatings on exposed semiconductor surfaces

Country Status (2)

Country Link
GB (1) GB900334A (enExample)
NL (1) NL257102A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337438A (en) * 1963-10-23 1967-08-22 Bell Telephone Labor Inc Stabilization of silicon semiconductor surfaces
US3350222A (en) * 1963-12-26 1967-10-31 Ibm Hermetic seal for planar transistors and method
DE1619970A1 (de) * 1966-10-10 1970-07-30 Ibm Verfahren zum Herstellen von passivierenden duennen Schichten mit verminderter Stoerstoffdiffusion und mit verminderter Ionenwanderung
FR2046848A1 (enExample) * 1969-06-18 1971-03-12 Matsushita Electronics Corp
DE1764560B1 (de) * 1967-06-28 1971-11-25 Hitachi Ltd Halbleiterbauelement mit stabilisierender oberflaechenisolier schicht
US4137141A (en) * 1976-11-18 1979-01-30 Loic Henry G Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337438A (en) * 1963-10-23 1967-08-22 Bell Telephone Labor Inc Stabilization of silicon semiconductor surfaces
US3350222A (en) * 1963-12-26 1967-10-31 Ibm Hermetic seal for planar transistors and method
DE1619970A1 (de) * 1966-10-10 1970-07-30 Ibm Verfahren zum Herstellen von passivierenden duennen Schichten mit verminderter Stoerstoffdiffusion und mit verminderter Ionenwanderung
DE1764560B1 (de) * 1967-06-28 1971-11-25 Hitachi Ltd Halbleiterbauelement mit stabilisierender oberflaechenisolier schicht
FR2046848A1 (enExample) * 1969-06-18 1971-03-12 Matsushita Electronics Corp
US4137141A (en) * 1976-11-18 1979-01-30 Loic Henry G Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates

Also Published As

Publication number Publication date
NL257102A (enExample) 1900-01-01

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