GB892088A - Method and apparatus for crystal growth - Google Patents
Method and apparatus for crystal growthInfo
- Publication number
- GB892088A GB892088A GB1882/60A GB188260A GB892088A GB 892088 A GB892088 A GB 892088A GB 1882/60 A GB1882/60 A GB 1882/60A GB 188260 A GB188260 A GB 188260A GB 892088 A GB892088 A GB 892088A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- crucible
- tube
- melt
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 239000000155 melt Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000005484 gravity Effects 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US892088XA | 1959-01-20 | 1959-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB892088A true GB892088A (en) | 1962-03-21 |
Family
ID=22216326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1882/60A Expired GB892088A (en) | 1959-01-20 | 1960-01-19 | Method and apparatus for crystal growth |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1188040B (enrdf_load_stackoverflow) |
| FR (1) | FR1244045A (enrdf_load_stackoverflow) |
| GB (1) | GB892088A (enrdf_load_stackoverflow) |
| NL (1) | NL246541A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119456967A (zh) * | 2024-11-14 | 2025-02-18 | 四川大学 | 一种用于微下拉法生长贵金属细丝材和薄片材的复合引棒 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2939459A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit antimon hochdotiertem silicium |
| DE2939492A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit indium hochdotiertem silicium |
| DE10255981A1 (de) * | 2002-11-26 | 2004-06-17 | Forschungsverbund Berlin E.V. | Vorrichtung zum Ziehen von Kristallen nach der Czochralski-Methode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1044768B (de) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
| NL218610A (enrdf_load_stackoverflow) * | 1956-07-02 |
-
0
- NL NL246541D patent/NL246541A/xx unknown
-
1959
- 1959-12-18 FR FR813533A patent/FR1244045A/fr not_active Expired
- 1959-12-18 DE DEI17405A patent/DE1188040B/de active Pending
-
1960
- 1960-01-19 GB GB1882/60A patent/GB892088A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119456967A (zh) * | 2024-11-14 | 2025-02-18 | 四川大学 | 一种用于微下拉法生长贵金属细丝材和薄片材的复合引棒 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1244045A (fr) | 1960-10-21 |
| NL246541A (enrdf_load_stackoverflow) | |
| DE1188040B (de) | 1965-03-04 |
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