GB8607950D0 - Etch technique for metal mask definition - Google Patents

Etch technique for metal mask definition

Info

Publication number
GB8607950D0
GB8607950D0 GB8607950A GB8607950A GB8607950D0 GB 8607950 D0 GB8607950 D0 GB 8607950D0 GB 8607950 A GB8607950 A GB 8607950A GB 8607950 A GB8607950 A GB 8607950A GB 8607950 D0 GB8607950 D0 GB 8607950D0
Authority
GB
United Kingdom
Prior art keywords
masking
etched
electron
chlorine
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8607950A
Other versions
GB2189903A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB8607950A priority Critical patent/GB2189903A/en
Publication of GB8607950D0 publication Critical patent/GB8607950D0/en
Priority to EP19870902125 priority patent/EP0261195A1/en
Priority to PCT/GB1987/000210 priority patent/WO1987006027A2/en
Publication of GB2189903A publication Critical patent/GB2189903A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Abstract

A technique (figure 3), for high resolution feature mask definition, in which a selectively non-erodable masking layer (1) is defined using electron resist (7) and electron lithography, and used in the selective etching of a metal coating (3). Another selective etchant is used subsequently to remove the masking material (1). The metal coating (3) is typically of chrome and may be selectively etched using a chlorine/oxygen plasma. The masking material (1) may be silicon dioxide and etched using a hydrogen containing fluorocarbon (eg. CF4/H2; CHF3). Alternatively, it may be of aluminium and etched using a chlorine, boron trichloride or carbon tetrachloride plasma. Other masking materials may be used eg. titanium, silicon, germanium or nickel. The masking layer may be formed using electron resist above the layer material (figures 1 to 3). Alternatively, the masking material and electron resist may be applied in reverse order and a float-off process used (figure 6).
GB8607950A 1986-04-01 1986-04-01 An etch technique for metal mask definition Withdrawn GB2189903A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB8607950A GB2189903A (en) 1986-04-01 1986-04-01 An etch technique for metal mask definition
EP19870902125 EP0261195A1 (en) 1986-04-01 1987-03-27 An etch technique for metal mask definition
PCT/GB1987/000210 WO1987006027A2 (en) 1986-04-01 1987-03-27 An etch technique for metal mask definition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8607950A GB2189903A (en) 1986-04-01 1986-04-01 An etch technique for metal mask definition

Publications (2)

Publication Number Publication Date
GB8607950D0 true GB8607950D0 (en) 1986-05-08
GB2189903A GB2189903A (en) 1987-11-04

Family

ID=10595491

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8607950A Withdrawn GB2189903A (en) 1986-04-01 1986-04-01 An etch technique for metal mask definition

Country Status (3)

Country Link
EP (1) EP0261195A1 (en)
GB (1) GB2189903A (en)
WO (1) WO1987006027A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
KR100259351B1 (en) * 1998-01-09 2000-08-01 김영환 Dry etching method for multilayer film
US6645677B1 (en) 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US6919167B2 (en) 2002-11-14 2005-07-19 Micell Technologies Positive tone lithography in carbon dioxide solvents
US7186480B2 (en) 2003-12-10 2007-03-06 Micron Technology, Inc. Method for adjusting dimensions of photomask features
JP6282466B2 (en) * 2013-12-27 2018-02-21 マクセルホールディングス株式会社 Metal mask for screen printing and manufacturing method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975252A (en) * 1975-03-14 1976-08-17 Bell Telephone Laboratories, Incorporated High-resolution sputter etching
US4098917A (en) * 1976-09-08 1978-07-04 Texas Instruments Incorporated Method of providing a patterned metal layer on a substrate employing metal mask and ion milling
JPS5593225A (en) * 1979-01-10 1980-07-15 Hitachi Ltd Forming method of minute pattern
FR2460496A1 (en) * 1979-06-29 1981-01-23 Ibm France PROCESS FOR MAKING CROSSCLES ON CHROME PLATES DIRECTLY BY AN IMAGE GENERATOR
JPS56130751A (en) * 1980-03-18 1981-10-13 Mitsubishi Electric Corp Manufacture of mask
JPS56130750A (en) * 1980-03-18 1981-10-13 Mitsubishi Electric Corp Manufacture of mask
JPS56133738A (en) * 1980-03-25 1981-10-20 Mitsubishi Electric Corp Forming method for pattern of photomask
JPS57112025A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Formation of pattern
DE3102647A1 (en) * 1981-01-27 1982-08-19 Siemens AG, 1000 Berlin und 8000 München STRUCTURING METAL OXIDE MASKS, IN PARTICULAR THROUGH REACTIVE ION RADIATION
JPS58152241A (en) * 1982-03-08 1983-09-09 Toshiba Corp Manufacture of high-precision mask
DE3272888D1 (en) * 1982-08-25 1986-10-02 Ibm Deutschland Reversal process for the production of chromium masks
GB2139781B (en) * 1983-05-13 1986-09-10 American Telephone & Telegraph Mask structure for vacuum ultraviolet lithography

Also Published As

Publication number Publication date
EP0261195A1 (en) 1988-03-30
GB2189903A (en) 1987-11-04
WO1987006027A3 (en) 1987-12-30
WO1987006027A2 (en) 1987-10-08

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)