GB793809A - Improvements in or relating to high frequency transistors and method of manufacturing the same - Google Patents

Improvements in or relating to high frequency transistors and method of manufacturing the same

Info

Publication number
GB793809A
GB793809A GB21879/55A GB2187955A GB793809A GB 793809 A GB793809 A GB 793809A GB 21879/55 A GB21879/55 A GB 21879/55A GB 2187955 A GB2187955 A GB 2187955A GB 793809 A GB793809 A GB 793809A
Authority
GB
United Kingdom
Prior art keywords
wafer
junction
july
relating
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21879/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Publication of GB793809A publication Critical patent/GB793809A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

793,809. Transistors. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. July 28, 1955 [July 28, 1954], No. 21879/55. Class 37. A junction transistor fox high-frequency use comprises a thin semi-conductor wafer having an alloy junction electrode provided on one face, and a surface barrier electrode on the other, serving as emitter and collector respectively. The Figure shows an N-type germanium wafer 1 having an emitter region 2 formed by alloying and diffusing indium into the surface. This NP junction is then reverse biased while the wafer is submitted to electrolytic etching to form cavity 4, and then an indium layer 5 is electrolytically deposited in the cavity to form the collector electrode.
GB21879/55A 1954-07-28 1955-07-28 Improvements in or relating to high frequency transistors and method of manufacturing the same Expired GB793809A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1024639X 1954-07-28

Publications (1)

Publication Number Publication Date
GB793809A true GB793809A (en) 1958-04-23

Family

ID=9578963

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21879/55A Expired GB793809A (en) 1954-07-28 1955-07-28 Improvements in or relating to high frequency transistors and method of manufacturing the same

Country Status (3)

Country Link
DE (1) DE1024639B (en)
FR (1) FR1109512A (en)
GB (1) GB793809A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL111786C (en) * 1956-05-04

Also Published As

Publication number Publication date
DE1024639B (en) 1958-02-20
FR1109512A (en) 1956-01-30

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