GB813943A - Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diode - Google Patents
Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diodeInfo
- Publication number
- GB813943A GB813943A GB4357A GB4357A GB813943A GB 813943 A GB813943 A GB 813943A GB 4357 A GB4357 A GB 4357A GB 4357 A GB4357 A GB 4357A GB 813943 A GB813943 A GB 813943A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- indium
- antimony
- conductor
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 229910052787 antimony Inorganic materials 0.000 abstract 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
- H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
Abstract
813,943. Semi-conductor devices. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. Jan. 1, 1957, No. 43/57. Drawings to Specification. Class 37. [Also in Group XL (c)] A semi-conductor diode, for use in an oscillator circuit (see Group XL (c)) comprises a body of semi-conductor material which is intrinsically conductive at room temperature but has formed thereon an area of P or N conductivity type by the addition of indium or antimony respectively to a portion of the surface of the body. The body comprises a plate of high purity germanium which has antimony or indium added to one face, the opposite face being hollowed out by electrolytic action to leave an I-region of less than 10 Á thickness. Connections are made to the diode by two wires, one of which is attached to the antimony or indium which serves as a solder while the other is secured by tin soldering within the hollowed-out region. Alternative semi-conductor materials which may be used are silicon and indium-antimony alloy. The diode is operated at the temperature of liquid air, being reversely biased on to the negative resistance portion of its characteristic, and is coupled to a resonant cavity to sustain oscillations whose frequency is determined by the resonant frequency of the cavity.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL100457D NL100457C (en) | 1956-01-03 | ||
NL213425D NL213425A (en) | 1956-01-03 | ||
FR1140946D FR1140946A (en) | 1956-01-03 | 1956-01-03 | Semiconductor oscillator |
FR70053D FR70053E (en) | 1956-01-03 | 1956-09-27 | Semiconductor oscillator |
US632181A US2891160A (en) | 1956-01-03 | 1957-01-02 | Semi-conductor oscillators |
Publications (1)
Publication Number | Publication Date |
---|---|
GB813943A true GB813943A (en) | 1959-05-27 |
Family
ID=1589874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4357A Expired GB813943A (en) | 1956-01-03 | 1957-01-01 | Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diode |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB813943A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3144630A (en) * | 1961-05-19 | 1964-08-11 | Westinghouse Electric Corp | Sonobuoy apparatus |
-
1957
- 1957-01-01 GB GB4357A patent/GB813943A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3144630A (en) * | 1961-05-19 | 1964-08-11 | Westinghouse Electric Corp | Sonobuoy apparatus |
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