GB813943A - Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diode - Google Patents

Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diode

Info

Publication number
GB813943A
GB813943A GB4357A GB4357A GB813943A GB 813943 A GB813943 A GB 813943A GB 4357 A GB4357 A GB 4357A GB 4357 A GB4357 A GB 4357A GB 813943 A GB813943 A GB 813943A
Authority
GB
United Kingdom
Prior art keywords
semi
indium
antimony
conductor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4357A
Inventor
Andre Leblond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Filing date
Publication date
Priority to NL100457D priority Critical patent/NL100457C/xx
Priority to NL213425D priority patent/NL213425A/xx
Priority to FR1140946D priority patent/FR1140946A/en
Priority to FR70053D priority patent/FR70053E/en
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to US632181A priority patent/US2891160A/en
Publication of GB813943A publication Critical patent/GB813943A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device

Abstract

813,943. Semi-conductor devices. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. Jan. 1, 1957, No. 43/57. Drawings to Specification. Class 37. [Also in Group XL (c)] A semi-conductor diode, for use in an oscillator circuit (see Group XL (c)) comprises a body of semi-conductor material which is intrinsically conductive at room temperature but has formed thereon an area of P or N conductivity type by the addition of indium or antimony respectively to a portion of the surface of the body. The body comprises a plate of high purity germanium which has antimony or indium added to one face, the opposite face being hollowed out by electrolytic action to leave an I-region of less than 10 Á thickness. Connections are made to the diode by two wires, one of which is attached to the antimony or indium which serves as a solder while the other is secured by tin soldering within the hollowed-out region. Alternative semi-conductor materials which may be used are silicon and indium-antimony alloy. The diode is operated at the temperature of liquid air, being reversely biased on to the negative resistance portion of its characteristic, and is coupled to a resonant cavity to sustain oscillations whose frequency is determined by the resonant frequency of the cavity.
GB4357A 1956-01-03 1957-01-01 Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diode Expired GB813943A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL100457D NL100457C (en) 1956-01-03
NL213425D NL213425A (en) 1956-01-03
FR1140946D FR1140946A (en) 1956-01-03 1956-01-03 Semiconductor oscillator
FR70053D FR70053E (en) 1956-01-03 1956-09-27 Semiconductor oscillator
US632181A US2891160A (en) 1956-01-03 1957-01-02 Semi-conductor oscillators

Publications (1)

Publication Number Publication Date
GB813943A true GB813943A (en) 1959-05-27

Family

ID=1589874

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4357A Expired GB813943A (en) 1956-01-03 1957-01-01 Improvements in or relating to oscillator circuit arrangements of the type incorporating a semi-conductor junction diode

Country Status (1)

Country Link
GB (1) GB813943A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3144630A (en) * 1961-05-19 1964-08-11 Westinghouse Electric Corp Sonobuoy apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3144630A (en) * 1961-05-19 1964-08-11 Westinghouse Electric Corp Sonobuoy apparatus

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