FR1109512A - Further training in junction transistors and their manufacturing processes - Google Patents

Further training in junction transistors and their manufacturing processes

Info

Publication number
FR1109512A
FR1109512A FR1109512DA FR1109512A FR 1109512 A FR1109512 A FR 1109512A FR 1109512D A FR1109512D A FR 1109512DA FR 1109512 A FR1109512 A FR 1109512A
Authority
FR
France
Prior art keywords
manufacturing processes
further training
junction transistors
transistors
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Application granted granted Critical
Publication of FR1109512A publication Critical patent/FR1109512A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR1109512D 1954-07-28 1954-07-28 Further training in junction transistors and their manufacturing processes Expired FR1109512A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1024639X 1954-07-28

Publications (1)

Publication Number Publication Date
FR1109512A true FR1109512A (en) 1956-01-30

Family

ID=9578963

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1109512D Expired FR1109512A (en) 1954-07-28 1954-07-28 Further training in junction transistors and their manufacturing processes

Country Status (3)

Country Link
DE (1) DE1024639B (en)
FR (1) FR1109512A (en)
GB (1) GB793809A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125551B (en) * 1956-05-04 1962-03-15 Philco Corp Process for producing an alloyed pn junction with very low penetration depth in a semiconductor body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125551B (en) * 1956-05-04 1962-03-15 Philco Corp Process for producing an alloyed pn junction with very low penetration depth in a semiconductor body

Also Published As

Publication number Publication date
DE1024639B (en) 1958-02-20
GB793809A (en) 1958-04-23

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