GB750640A - Treatment of germanium bodies - Google Patents
Treatment of germanium bodiesInfo
- Publication number
- GB750640A GB750640A GB2501/54A GB250154A GB750640A GB 750640 A GB750640 A GB 750640A GB 2501/54 A GB2501/54 A GB 2501/54A GB 250154 A GB250154 A GB 250154A GB 750640 A GB750640 A GB 750640A
- Authority
- GB
- United Kingdom
- Prior art keywords
- copper
- parts
- treatment
- glyoxine
- nacn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052732 germanium Inorganic materials 0.000 title abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005422 blasting Methods 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 230000000536 complexating effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910001431 copper ion Inorganic materials 0.000 abstract 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- 239000012153 distilled water Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 150000002825 nitriles Chemical class 0.000 abstract 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 abstract 1
- 150000003892 tartrate salts Chemical class 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US334972A US2698780A (en) | 1953-02-03 | 1953-02-03 | Method of treating germanium for translating devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB750640A true GB750640A (en) | 1956-06-20 |
Family
ID=23309674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2501/54A Expired GB750640A (en) | 1953-02-03 | 1954-01-27 | Treatment of germanium bodies |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US2698780A (en:Method) |
| BE (1) | BE524399A (en:Method) |
| DE (1) | DE1008831B (en:Method) |
| FR (1) | FR1087083A (en:Method) |
| GB (1) | GB750640A (en:Method) |
| NL (1) | NL93089C (en:Method) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3042593A (en) * | 1957-09-23 | 1962-07-03 | Philco Corp | Electrochemical method for cleansing semiconductive devices |
| US2973253A (en) * | 1957-12-09 | 1961-02-28 | Texas Instruments Inc | Etching of semiconductor materials |
| DE1103469B (de) * | 1958-10-21 | 1961-03-30 | Siemens Ag | Verfahren zum AEtzen von Halbleiterkoerpern mit fuer Halbleiteranordnungen geeigneter geometrischer Form |
| US3231436A (en) * | 1962-03-07 | 1966-01-25 | Nippon Electric Co | Method of heat treating semiconductor devices to stabilize current amplification factor characteristic |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR851651A (fr) * | 1938-09-21 | 1940-01-12 | Westinghouse Freins & Signaux | Perfectionnements à la fabrication de dispositifs à conductibilité asymétrique |
| BE471989A (en:Method) * | 1941-07-16 | |||
| GB592659A (en) * | 1941-07-16 | 1947-09-25 | Gen Electric Co Ltd | Improvements in crystal contacts of which one element is germanium |
| US2560594A (en) * | 1948-09-24 | 1951-07-17 | Bell Telephone Labor Inc | Semiconductor translator and method of making it |
| US2619414A (en) * | 1950-05-25 | 1952-11-25 | Bell Telephone Labor Inc | Surface treatment of germanium circuit elements |
-
0
- NL NL93089D patent/NL93089C/xx active
- BE BE524399D patent/BE524399A/xx unknown
-
1953
- 1953-02-03 US US334972A patent/US2698780A/en not_active Expired - Lifetime
- 1953-11-12 FR FR1087083D patent/FR1087083A/fr not_active Expired
- 1953-11-18 DE DEW12608A patent/DE1008831B/de active Pending
-
1954
- 1954-01-27 GB GB2501/54A patent/GB750640A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1008831B (de) | 1957-05-23 |
| FR1087083A (fr) | 1955-02-18 |
| US2698780A (en) | 1955-01-04 |
| BE524399A (en:Method) | |
| NL93089C (en:Method) |
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