GB592659A - Improvements in crystal contacts of which one element is germanium - Google Patents

Improvements in crystal contacts of which one element is germanium

Info

Publication number
GB592659A
GB592659A GB899741A GB899741A GB592659A GB 592659 A GB592659 A GB 592659A GB 899741 A GB899741 A GB 899741A GB 899741 A GB899741 A GB 899741A GB 592659 A GB592659 A GB 592659A
Authority
GB
United Kingdom
Prior art keywords
germanium
tetrachloride
hydrochloric acid
pure
crystal contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB899741A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Filing date
Publication date
Priority to BE471989D priority Critical patent/BE471989A/xx
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to CH261491D priority patent/CH261491A/en
Priority to FR944003D priority patent/FR944003A/en
Priority to US764580A priority patent/US2588008A/en
Publication of GB592659A publication Critical patent/GB592659A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A crystal detector is made from highly purified germanium of not less than 99.95 per cent purity which is obtained by distilling the tetrachloride from hydrochloric acid in excess of chlorine. The tetrachloride is received in distilled water from which hydrated germanium hydroxide is recovered and dissolved in hydrochloric acid to repeat the process as often as is necessary. Finally, the pure germanium oxide is reduced with pure hydrogen and the resulting powder is fused in an inert atmosphere to form the solid metal which is broken into fragments to provide detector elements.
GB899741A 1941-07-16 1941-07-16 Improvements in crystal contacts of which one element is germanium Expired GB592659A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BE471989D BE471989A (en) 1941-07-16
CH261491D CH261491A (en) 1941-07-16 1947-03-10 Method of manufacturing a crystal rectifier.
FR944003D FR944003A (en) 1941-07-16 1947-03-27 Crystal contacts
US764580A US2588008A (en) 1941-07-16 1947-07-29 Germanium crystal rectifiers and method of producing the crystal element thereof

Publications (1)

Publication Number Publication Date
GB592659A true GB592659A (en) 1947-09-25

Family

ID=1629591

Family Applications (1)

Application Number Title Priority Date Filing Date
GB899741A Expired GB592659A (en) 1941-07-16 1941-07-16 Improvements in crystal contacts of which one element is germanium

Country Status (1)

Country Link
GB (1) GB592659A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
DE1008831B (en) * 1953-02-03 1957-05-23 Western Electric Co Process for the surface treatment of a germanium semiconductor body for rectifiers and amplifiers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
DE1008831B (en) * 1953-02-03 1957-05-23 Western Electric Co Process for the surface treatment of a germanium semiconductor body for rectifiers and amplifiers

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